JPS61220369A - 薄膜電界効果素子 - Google Patents

薄膜電界効果素子

Info

Publication number
JPS61220369A
JPS61220369A JP60061245A JP6124585A JPS61220369A JP S61220369 A JPS61220369 A JP S61220369A JP 60061245 A JP60061245 A JP 60061245A JP 6124585 A JP6124585 A JP 6124585A JP S61220369 A JPS61220369 A JP S61220369A
Authority
JP
Japan
Prior art keywords
semiconductor layer
thin film
amorphous
layer
forbidden band
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60061245A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0564862B2 (enrdf_load_stackoverflow
Inventor
Isao Sakata
功 坂田
Yutaka Hayashi
豊 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP60061245A priority Critical patent/JPS61220369A/ja
Publication of JPS61220369A publication Critical patent/JPS61220369A/ja
Publication of JPH0564862B2 publication Critical patent/JPH0564862B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]

Landscapes

  • Thin Film Transistor (AREA)
JP60061245A 1985-03-26 1985-03-26 薄膜電界効果素子 Granted JPS61220369A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60061245A JPS61220369A (ja) 1985-03-26 1985-03-26 薄膜電界効果素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60061245A JPS61220369A (ja) 1985-03-26 1985-03-26 薄膜電界効果素子

Publications (2)

Publication Number Publication Date
JPS61220369A true JPS61220369A (ja) 1986-09-30
JPH0564862B2 JPH0564862B2 (enrdf_load_stackoverflow) 1993-09-16

Family

ID=13165652

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60061245A Granted JPS61220369A (ja) 1985-03-26 1985-03-26 薄膜電界効果素子

Country Status (1)

Country Link
JP (1) JPS61220369A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5055899A (en) * 1987-09-09 1991-10-08 Casio Computer Co., Ltd. Thin film transistor
US5065202A (en) * 1988-02-26 1991-11-12 Seikosha Co., Ltd. Amorphous silicon thin film transistor array substrate and method for producing the same
US5101242A (en) * 1989-02-17 1992-03-31 International Business Machines Corporation Thin film transistor
US5166085A (en) * 1987-09-09 1992-11-24 Casio Computer Co., Ltd. Method of manufacturing a thin film transistor
US5221631A (en) * 1989-02-17 1993-06-22 International Business Machines Corporation Method of fabricating a thin film transistor having a silicon carbide buffer layer
US5229644A (en) * 1987-09-09 1993-07-20 Casio Computer Co., Ltd. Thin film transistor having a transparent electrode and substrate
US5327001A (en) * 1987-09-09 1994-07-05 Casio Computer Co., Ltd. Thin film transistor array having single light shield layer over transistors and gate and drain lines

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5055899A (en) * 1987-09-09 1991-10-08 Casio Computer Co., Ltd. Thin film transistor
US5166085A (en) * 1987-09-09 1992-11-24 Casio Computer Co., Ltd. Method of manufacturing a thin film transistor
US5229644A (en) * 1987-09-09 1993-07-20 Casio Computer Co., Ltd. Thin film transistor having a transparent electrode and substrate
US5327001A (en) * 1987-09-09 1994-07-05 Casio Computer Co., Ltd. Thin film transistor array having single light shield layer over transistors and gate and drain lines
US5065202A (en) * 1988-02-26 1991-11-12 Seikosha Co., Ltd. Amorphous silicon thin film transistor array substrate and method for producing the same
US5101242A (en) * 1989-02-17 1992-03-31 International Business Machines Corporation Thin film transistor
US5221631A (en) * 1989-02-17 1993-06-22 International Business Machines Corporation Method of fabricating a thin film transistor having a silicon carbide buffer layer

Also Published As

Publication number Publication date
JPH0564862B2 (enrdf_load_stackoverflow) 1993-09-16

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term