JPH0556657B2 - - Google Patents

Info

Publication number
JPH0556657B2
JPH0556657B2 JP59142386A JP14238684A JPH0556657B2 JP H0556657 B2 JPH0556657 B2 JP H0556657B2 JP 59142386 A JP59142386 A JP 59142386A JP 14238684 A JP14238684 A JP 14238684A JP H0556657 B2 JPH0556657 B2 JP H0556657B2
Authority
JP
Japan
Prior art keywords
type
region
type region
base
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59142386A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6123353A (ja
Inventor
Yasuaki Kowase
Takayoshi Ichikawa
Tatsutoshi Takagi
Yoshinori Akamatsu
Makoto Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Microcomputer System Ltd
Hitachi Ltd
Renesas Technology America Inc
Original Assignee
Hitachi Microcomputer System Ltd
Hitachi Ltd
Hitachi Micro Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Microcomputer System Ltd, Hitachi Ltd, Hitachi Micro Systems Inc filed Critical Hitachi Microcomputer System Ltd
Priority to JP59142386A priority Critical patent/JPS6123353A/ja
Publication of JPS6123353A publication Critical patent/JPS6123353A/ja
Publication of JPH0556657B2 publication Critical patent/JPH0556657B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP59142386A 1984-07-11 1984-07-11 過電圧保護素子 Granted JPS6123353A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59142386A JPS6123353A (ja) 1984-07-11 1984-07-11 過電圧保護素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59142386A JPS6123353A (ja) 1984-07-11 1984-07-11 過電圧保護素子

Publications (2)

Publication Number Publication Date
JPS6123353A JPS6123353A (ja) 1986-01-31
JPH0556657B2 true JPH0556657B2 (enrdf_load_stackoverflow) 1993-08-20

Family

ID=15314154

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59142386A Granted JPS6123353A (ja) 1984-07-11 1984-07-11 過電圧保護素子

Country Status (1)

Country Link
JP (1) JPS6123353A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0766956B2 (ja) * 1986-08-21 1995-07-19 三菱電機株式会社 半導体集積回路装置の静電破壊防止装置
JPH0766957B2 (ja) * 1986-12-12 1995-07-19 三菱電機株式会社 半導体集積回路装置の静電破壊防止装置
US5539233A (en) * 1993-07-22 1996-07-23 Texas Instruments Incorporated Controlled low collector breakdown voltage vertical transistor for ESD protection circuits
KR101848352B1 (ko) * 2012-02-28 2018-04-12 신니혼무센 가부시키가이샤 반도체 장치

Also Published As

Publication number Publication date
JPS6123353A (ja) 1986-01-31

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