JPH051083Y2 - - Google Patents
Info
- Publication number
- JPH051083Y2 JPH051083Y2 JP1983012553U JP1255383U JPH051083Y2 JP H051083 Y2 JPH051083 Y2 JP H051083Y2 JP 1983012553 U JP1983012553 U JP 1983012553U JP 1255383 U JP1255383 U JP 1255383U JP H051083 Y2 JPH051083 Y2 JP H051083Y2
- Authority
- JP
- Japan
- Prior art keywords
- region
- drain
- drift region
- concentration
- low concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 14
- 239000012535 impurity Substances 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 4
- 230000005669 field effect Effects 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1255383U JPS59119045U (ja) | 1983-01-28 | 1983-01-28 | 高出力高周波トランジスタ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1255383U JPS59119045U (ja) | 1983-01-28 | 1983-01-28 | 高出力高周波トランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59119045U JPS59119045U (ja) | 1984-08-11 |
JPH051083Y2 true JPH051083Y2 (US20100012521A1-20100121-C00001.png) | 1993-01-12 |
Family
ID=30143954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1255383U Granted JPS59119045U (ja) | 1983-01-28 | 1983-01-28 | 高出力高周波トランジスタ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59119045U (US20100012521A1-20100121-C00001.png) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2771903B2 (ja) * | 1990-03-05 | 1998-07-02 | 富士通株式会社 | 高耐圧mosトランジスタ及びその製造方法、及び半導体装置及びその製造方法 |
JP2690244B2 (ja) * | 1992-08-20 | 1997-12-10 | 松下電子工業株式会社 | Mis型高耐圧トランジスタおよびその製造方法 |
TW200733386A (en) * | 2005-11-29 | 2007-09-01 | Sharp Kk | Semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49100979A (US20100012521A1-20100121-C00001.png) * | 1973-01-31 | 1974-09-24 |
-
1983
- 1983-01-28 JP JP1255383U patent/JPS59119045U/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49100979A (US20100012521A1-20100121-C00001.png) * | 1973-01-31 | 1974-09-24 |
Also Published As
Publication number | Publication date |
---|---|
JPS59119045U (ja) | 1984-08-11 |