JPH0510820B2 - - Google Patents

Info

Publication number
JPH0510820B2
JPH0510820B2 JP58114237A JP11423783A JPH0510820B2 JP H0510820 B2 JPH0510820 B2 JP H0510820B2 JP 58114237 A JP58114237 A JP 58114237A JP 11423783 A JP11423783 A JP 11423783A JP H0510820 B2 JPH0510820 B2 JP H0510820B2
Authority
JP
Japan
Prior art keywords
heat treatment
substrate
diffusion layer
film
implanted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58114237A
Other languages
English (en)
Japanese (ja)
Other versions
JPS607126A (ja
Inventor
Yoshitaka Tsunashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP11423783A priority Critical patent/JPS607126A/ja
Publication of JPS607126A publication Critical patent/JPS607126A/ja
Publication of JPH0510820B2 publication Critical patent/JPH0510820B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
JP11423783A 1983-06-27 1983-06-27 半導体装置の製造方法 Granted JPS607126A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11423783A JPS607126A (ja) 1983-06-27 1983-06-27 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11423783A JPS607126A (ja) 1983-06-27 1983-06-27 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS607126A JPS607126A (ja) 1985-01-14
JPH0510820B2 true JPH0510820B2 (enrdf_load_stackoverflow) 1993-02-10

Family

ID=14632695

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11423783A Granted JPS607126A (ja) 1983-06-27 1983-06-27 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS607126A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2591733B2 (ja) * 1985-10-23 1997-03-19 ソニー株式会社 半導体装置の製造方法
TW301032B (en) * 1996-06-27 1997-03-21 Winbond Electronics Corp Structure of self-aligned salicide device with double sidewall spacers and fabrication method thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5329668A (en) * 1976-08-31 1978-03-20 Nec Corp Production of semiconductor device
JPS56146232A (en) * 1980-02-27 1981-11-13 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS607126A (ja) 1985-01-14

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