JPS607126A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS607126A
JPS607126A JP11423783A JP11423783A JPS607126A JP S607126 A JPS607126 A JP S607126A JP 11423783 A JP11423783 A JP 11423783A JP 11423783 A JP11423783 A JP 11423783A JP S607126 A JPS607126 A JP S607126A
Authority
JP
Japan
Prior art keywords
film
substrate
heat treatment
diffusion layer
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11423783A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0510820B2 (enrdf_load_stackoverflow
Inventor
Yoshitaka Tsunashima
綱島　祥隆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP11423783A priority Critical patent/JPS607126A/ja
Publication of JPS607126A publication Critical patent/JPS607126A/ja
Publication of JPH0510820B2 publication Critical patent/JPH0510820B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
JP11423783A 1983-06-27 1983-06-27 半導体装置の製造方法 Granted JPS607126A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11423783A JPS607126A (ja) 1983-06-27 1983-06-27 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11423783A JPS607126A (ja) 1983-06-27 1983-06-27 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS607126A true JPS607126A (ja) 1985-01-14
JPH0510820B2 JPH0510820B2 (enrdf_load_stackoverflow) 1993-02-10

Family

ID=14632695

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11423783A Granted JPS607126A (ja) 1983-06-27 1983-06-27 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS607126A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6295874A (ja) * 1985-10-23 1987-05-02 Sony Corp 半導体装置の製造方法
US5824588A (en) * 1996-06-27 1998-10-20 Winbond Electronics Corp. Double spacer salicide MOS process and device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5329668A (en) * 1976-08-31 1978-03-20 Nec Corp Production of semiconductor device
JPS56146232A (en) * 1980-02-27 1981-11-13 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5329668A (en) * 1976-08-31 1978-03-20 Nec Corp Production of semiconductor device
JPS56146232A (en) * 1980-02-27 1981-11-13 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6295874A (ja) * 1985-10-23 1987-05-02 Sony Corp 半導体装置の製造方法
US5824588A (en) * 1996-06-27 1998-10-20 Winbond Electronics Corp. Double spacer salicide MOS process and device

Also Published As

Publication number Publication date
JPH0510820B2 (enrdf_load_stackoverflow) 1993-02-10

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