JPH0469435B2 - - Google Patents

Info

Publication number
JPH0469435B2
JPH0469435B2 JP59206554A JP20655484A JPH0469435B2 JP H0469435 B2 JPH0469435 B2 JP H0469435B2 JP 59206554 A JP59206554 A JP 59206554A JP 20655484 A JP20655484 A JP 20655484A JP H0469435 B2 JPH0469435 B2 JP H0469435B2
Authority
JP
Japan
Prior art keywords
gate electrode
mis
diffused
semiconductor device
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59206554A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6184865A (ja
Inventor
Shinichi Shugyo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP59206554A priority Critical patent/JPS6184865A/ja
Publication of JPS6184865A publication Critical patent/JPS6184865A/ja
Publication of JPH0469435B2 publication Critical patent/JPH0469435B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/152—Source regions of DMOS transistors
    • H10D62/154—Dispositions

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP59206554A 1984-10-02 1984-10-02 半導体装置 Granted JPS6184865A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59206554A JPS6184865A (ja) 1984-10-02 1984-10-02 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59206554A JPS6184865A (ja) 1984-10-02 1984-10-02 半導体装置

Publications (2)

Publication Number Publication Date
JPS6184865A JPS6184865A (ja) 1986-04-30
JPH0469435B2 true JPH0469435B2 (enrdf_load_stackoverflow) 1992-11-06

Family

ID=16525310

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59206554A Granted JPS6184865A (ja) 1984-10-02 1984-10-02 半導体装置

Country Status (1)

Country Link
JP (1) JPS6184865A (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2785271B2 (ja) * 1988-04-28 1998-08-13 富士電機株式会社 半導体装置
JPH0828503B2 (ja) * 1988-05-18 1996-03-21 富士電機株式会社 Ｍｏｓ型半導体装置
JPH02312280A (ja) * 1989-05-26 1990-12-27 Mitsubishi Electric Corp 絶縁ゲート型バイポーラトランジスタ
JPH0783125B2 (ja) * 1989-06-12 1995-09-06 株式会社日立製作所 半導体装置
JP2817536B2 (ja) * 1991-09-27 1998-10-30 日本電気株式会社 半導体装置
US5430314A (en) * 1992-04-23 1995-07-04 Siliconix Incorporated Power device with buffered gate shield region
US5544038A (en) * 1992-09-21 1996-08-06 General Electric Company Synchronous rectifier package for high-efficiency operation
US6037631A (en) * 1998-09-18 2000-03-14 Siemens Aktiengesellschaft Semiconductor component with a high-voltage endurance edge structure

Also Published As

Publication number Publication date
JPS6184865A (ja) 1986-04-30

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