JPH0467794B2 - - Google Patents
Info
- Publication number
- JPH0467794B2 JPH0467794B2 JP61170623A JP17062386A JPH0467794B2 JP H0467794 B2 JPH0467794 B2 JP H0467794B2 JP 61170623 A JP61170623 A JP 61170623A JP 17062386 A JP17062386 A JP 17062386A JP H0467794 B2 JPH0467794 B2 JP H0467794B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- active region
- region
- contact
- contact region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 21
- 239000012535 impurity Substances 0.000 claims description 14
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 8
- 238000005468 ion implantation Methods 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 4
- 229910000859 α-Fe Inorganic materials 0.000 description 14
- 239000010408 film Substances 0.000 description 13
- 238000002513 implantation Methods 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- -1 silicon ions Chemical class 0.000 description 9
- 230000005291 magnetic effect Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000004907 flux Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000003302 ferromagnetic material Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/101—Semiconductor Hall-effect devices
Landscapes
- Hall/Mr Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61170623A JPS6327076A (ja) | 1986-07-18 | 1986-07-18 | ホール素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61170623A JPS6327076A (ja) | 1986-07-18 | 1986-07-18 | ホール素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6327076A JPS6327076A (ja) | 1988-02-04 |
| JPH0467794B2 true JPH0467794B2 (ko) | 1992-10-29 |
Family
ID=15908305
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61170623A Granted JPS6327076A (ja) | 1986-07-18 | 1986-07-18 | ホール素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6327076A (ko) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6043076B2 (ja) * | 2012-03-23 | 2016-12-14 | エスアイアイ・セミコンダクタ株式会社 | ホールセンサ |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51140494A (en) * | 1975-05-14 | 1976-12-03 | Ibm | Magnetic sensor |
| JPS55117294A (en) * | 1979-02-28 | 1980-09-09 | Tdk Corp | Hall effect device |
-
1986
- 1986-07-18 JP JP61170623A patent/JPS6327076A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51140494A (en) * | 1975-05-14 | 1976-12-03 | Ibm | Magnetic sensor |
| JPS55117294A (en) * | 1979-02-28 | 1980-09-09 | Tdk Corp | Hall effect device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6327076A (ja) | 1988-02-04 |
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