JPS55117294A - Hall effect device - Google Patents

Hall effect device

Info

Publication number
JPS55117294A
JPS55117294A JP2310379A JP2310379A JPS55117294A JP S55117294 A JPS55117294 A JP S55117294A JP 2310379 A JP2310379 A JP 2310379A JP 2310379 A JP2310379 A JP 2310379A JP S55117294 A JPS55117294 A JP S55117294A
Authority
JP
Japan
Prior art keywords
electrodes
region
voltage
magnetic flux
produced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2310379A
Other languages
Japanese (ja)
Other versions
JPH0120556B2 (en
Inventor
Ryohei Kuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP2310379A priority Critical patent/JPS55117294A/en
Publication of JPS55117294A publication Critical patent/JPS55117294A/en
Publication of JPH0120556B2 publication Critical patent/JPH0120556B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices

Landscapes

  • Hall/Mr Elements (AREA)

Abstract

PURPOSE:To remarkably reduce the unbalanced voltage in a Hall effect device by disposing semiconductor layers having predetermined carrier density in parallel through isolating region, passing magnetic flux in thickness direction, and energizing the respective semiconductor layers to produce Hall voltage in the isolating region. CONSTITUTION:A p-type layer 8 extended from a p-type substrate 1 is formed in the region 7 between current supply electrodes 4a and 4b of the upper region 3 of the n-type layers 9a, 9b of the substrate 1, extended along the vertical line LV passing through the center O of the region 7 so as not to make contact with the electrodes 4a, 4b. Hall voltage picking up electrodes 9a, 9b are oppositely disposed at the side of the layer 8. The electrode 4a is positively energized, and magnetic flux is passed in thickness direction through the layers 9a, 9b. Then, an output voltage is produced between the electrodes 5a and 5b in response to the magnetic flux density. According to this configuration even if the electrodes 5a, 5b are so formed as to incline at an angle theta with respect to the horizontal line LH passing through the center O, the unbalanced voltage thus produced is remarkably lower than that produced from the conventional device.
JP2310379A 1979-02-28 1979-02-28 Hall effect device Granted JPS55117294A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2310379A JPS55117294A (en) 1979-02-28 1979-02-28 Hall effect device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2310379A JPS55117294A (en) 1979-02-28 1979-02-28 Hall effect device

Publications (2)

Publication Number Publication Date
JPS55117294A true JPS55117294A (en) 1980-09-09
JPH0120556B2 JPH0120556B2 (en) 1989-04-17

Family

ID=12101118

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2310379A Granted JPS55117294A (en) 1979-02-28 1979-02-28 Hall effect device

Country Status (1)

Country Link
JP (1) JPS55117294A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6327074A (en) * 1986-07-18 1988-02-04 Sanyo Electric Co Ltd Hall element
JPS6327076A (en) * 1986-07-18 1988-02-04 Sanyo Electric Co Ltd Hall element

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5135343A (en) * 1974-09-19 1976-03-25 Matsushita Electric Ind Co Ltd

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5135343A (en) * 1974-09-19 1976-03-25 Matsushita Electric Ind Co Ltd

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6327074A (en) * 1986-07-18 1988-02-04 Sanyo Electric Co Ltd Hall element
JPS6327076A (en) * 1986-07-18 1988-02-04 Sanyo Electric Co Ltd Hall element
JPH0467794B2 (en) * 1986-07-18 1992-10-29 Sanyo Electric Co
JPH0467793B2 (en) * 1986-07-18 1992-10-29 Sanyo Electric Co

Also Published As

Publication number Publication date
JPH0120556B2 (en) 1989-04-17

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