GB1435135A - Electroluminescent semiconductor devices method of machining a fixing slot in a fixed b - Google Patents
Electroluminescent semiconductor devices method of machining a fixing slot in a fixed bInfo
- Publication number
- GB1435135A GB1435135A GB3279473A GB3279473A GB1435135A GB 1435135 A GB1435135 A GB 1435135A GB 3279473 A GB3279473 A GB 3279473A GB 3279473 A GB3279473 A GB 3279473A GB 1435135 A GB1435135 A GB 1435135A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- zone
- recombination
- junction
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000003754 machining Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 4
- 230000006798 recombination Effects 0.000 abstract 4
- 238000005215 recombination Methods 0.000 abstract 4
- 238000005401 electroluminescence Methods 0.000 abstract 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000000969 carrier Substances 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
- 238000000407 epitaxy Methods 0.000 abstract 1
- 229910003437 indium oxide Inorganic materials 0.000 abstract 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 1
- 229910001887 tin oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06203—Transistor-type lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0037—Devices characterised by their operation having a MIS barrier layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0041—Devices characterised by their operation characterised by field-effect operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Led Devices (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
1435135 Electroluminescence PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 10 July 1973 [13 July 1972] 32794/73 Heading C4S [Also in Division H1] The recombination volume of an electroluminescent semi-conductor device including a forward-biased junction J between a body 1 and a region 2 is controlled by an electric field induced in a zone 2b of the latter by an electrode 5 capacitively coupled to the region 2 through a dielectric layer 4. In accordance with the magnitude and polarity of the field in zone 2b minority carriers may be caused to recombine preferentially near the surface of the region 2 where recombination is non-radiative and no electroluminescence results, or deep in the bulk of the semi-conductor material where recombination is radiative and electroluminescence is produced. The thickness of the region 2 is preferably 1-10 minority carrier diffusion lengths, while the zone 2a below the field zone 2b is less than one diffusion length thick. In a device such as that illustrated different voltages applied to the two capacitive electrodes 5, 6 may cause one part of the device to radiate, e.g. through transparent dielectric and electrode layers 4, 5, while another part remains dark, and this facility may be employed in a display device having either a common junction J or a plurality of junctions each of which underlie a corresponding capactive electrode. The junction J is preferably a PN junction and may be formed by epitaxy or diffusion. In the former case it may be a heterojunction, e.g. between N-type GaAs body 1 and Te-doped GaAs 0À6 P 0À4 region 2. The region 2 preferably includes Zn introduced by diffusion and subsequently outdiffused so as to contain a concentration of recombination centres which diminishes as the surface is approached. Other semi-conductor materials mentioned are GaP and GaAlAs. The dielectric layer 4 may be an oxide of Si or Al, while the transparent electrodes 5, 6 may be of tin oxide, indium oxide or Cr of appropriate thinness. The surface of the dielectric layer 4 between the electrodes 5, 6 may be covered with an opaque insulating coating, optionally covered itself by a conductive layer.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7225492A FR2192432B1 (en) | 1972-07-13 | 1972-07-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1435135A true GB1435135A (en) | 1976-05-12 |
Family
ID=9101826
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3279473A Expired GB1435135A (en) | 1972-07-13 | 1973-07-10 | Electroluminescent semiconductor devices method of machining a fixing slot in a fixed b |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5214154B2 (en) |
| FR (1) | FR2192432B1 (en) |
| GB (1) | GB1435135A (en) |
| IT (1) | IT991709B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1006255A (en) * | 1974-09-17 | 1977-03-01 | Frederick D. King | Variable stripe width semiconductor laser |
| GB1557072A (en) * | 1976-10-13 | 1979-12-05 | Standard Telephones Cables Ltd | Stripe lears |
| JPS547151U (en) * | 1977-06-16 | 1979-01-18 | ||
| JPS56154277A (en) * | 1980-05-02 | 1981-11-28 | Sanko Metal Ind Corp Ltd | Base material for joining by brazing |
| JPS56158271A (en) * | 1980-05-07 | 1981-12-05 | Sanko Metal Ind Corp Ltd | Manufacture of base metal having brazing plated layer |
| JPS56158272A (en) * | 1980-05-07 | 1981-12-05 | Sanko Metal Ind Corp Ltd | Method and apparatus for joining building member |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3102201A (en) * | 1958-12-15 | 1963-08-27 | Rca Corp | Semiconductor device for generating modulated radiation |
-
1972
- 1972-07-13 FR FR7225492A patent/FR2192432B1/fr not_active Expired
-
1973
- 1973-07-10 IT IT6905973A patent/IT991709B/en active
- 1973-07-10 JP JP7716473A patent/JPS5214154B2/ja not_active Expired
- 1973-07-10 GB GB3279473A patent/GB1435135A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5214154B2 (en) | 1977-04-19 |
| IT991709B (en) | 1975-08-30 |
| FR2192432B1 (en) | 1975-09-05 |
| FR2192432A1 (en) | 1974-02-08 |
| JPS4946690A (en) | 1974-05-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |