GB1485462A - High voltage semi-conductor lamps - Google Patents

High voltage semi-conductor lamps

Info

Publication number
GB1485462A
GB1485462A GB437574A GB437574A GB1485462A GB 1485462 A GB1485462 A GB 1485462A GB 437574 A GB437574 A GB 437574A GB 437574 A GB437574 A GB 437574A GB 1485462 A GB1485462 A GB 1485462A
Authority
GB
United Kingdom
Prior art keywords
conductor
semi
jan
high voltage
lamps
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB437574A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thorn Electrical Industries Ltd
Original Assignee
Thorn Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thorn Electrical Industries Ltd filed Critical Thorn Electrical Industries Ltd
Priority to GB437574A priority Critical patent/GB1485462A/en
Publication of GB1485462A publication Critical patent/GB1485462A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond

Abstract

1485462 Semi-conductor lamps THORN ELECTRICAL INDUSTRIES Ltd 9 Jan 1975 [30 Jan 1974] 04375/74 Heading H1K A semi-conductor lamp comprises a stack of ohmically-contacted P-N junction containing electroluminescent chips 11 connected together in series by a conductive cement such as metalcontaining epoxy cement 12. The chips 11 may be of GaP and/or GaAsP grown by liquid phase epitaxy, the P layer 15 in each case being doped with zinc and oxygen. Each chip carries a gold electrode on its upper face and a tin/gold layered electrode on its lower face. The device may be encapsulated in transparent epoxy.
GB437574A 1975-01-09 1975-01-09 High voltage semi-conductor lamps Expired GB1485462A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB437574A GB1485462A (en) 1975-01-09 1975-01-09 High voltage semi-conductor lamps

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB437574A GB1485462A (en) 1975-01-09 1975-01-09 High voltage semi-conductor lamps

Publications (1)

Publication Number Publication Date
GB1485462A true GB1485462A (en) 1977-09-14

Family

ID=9775988

Family Applications (1)

Application Number Title Priority Date Filing Date
GB437574A Expired GB1485462A (en) 1975-01-09 1975-01-09 High voltage semi-conductor lamps

Country Status (1)

Country Link
GB (1) GB1485462A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3929477A1 (en) * 1989-09-05 1991-03-07 Siemens Ag LED module for operation as motor vehicle light source - has several LED chips mechanically combined and electrically in series
EP1475835A2 (en) * 2003-04-14 2004-11-10 Epitech Corporation, Ltd. Color mixing light emitting diode
US7064354B2 (en) 2003-01-02 2006-06-20 Epitech Technology Corporation Color mixing light emitting diode
DE102006046038A1 (en) * 2006-09-28 2008-04-03 Osram Opto Semiconductors Gmbh LED semiconductor body for e.g. vehicle lighting, has radiation-generating active layers adjusted to operating voltage such that voltage dropping at series resistor is larger as voltage dropping at semiconductor body
WO2008043324A1 (en) * 2006-09-28 2008-04-17 Osram Opto Semiconductors Gmbh Led semiconductor element, and use thereof

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3929477A1 (en) * 1989-09-05 1991-03-07 Siemens Ag LED module for operation as motor vehicle light source - has several LED chips mechanically combined and electrically in series
US7064354B2 (en) 2003-01-02 2006-06-20 Epitech Technology Corporation Color mixing light emitting diode
EP1475835A2 (en) * 2003-04-14 2004-11-10 Epitech Corporation, Ltd. Color mixing light emitting diode
EP1475835A3 (en) * 2003-04-14 2004-12-15 Epitech Corporation, Ltd. Color mixing light emitting diode
DE102006046038A1 (en) * 2006-09-28 2008-04-03 Osram Opto Semiconductors Gmbh LED semiconductor body for e.g. vehicle lighting, has radiation-generating active layers adjusted to operating voltage such that voltage dropping at series resistor is larger as voltage dropping at semiconductor body
WO2008043324A1 (en) * 2006-09-28 2008-04-17 Osram Opto Semiconductors Gmbh Led semiconductor element, and use thereof
US8003974B2 (en) 2006-09-28 2011-08-23 Osram Opto Semiconductors Gmbh LED semiconductor element having increased luminance
US8283684B2 (en) 2006-09-28 2012-10-09 Osram Opto Semiconductors Gmbh LED semiconductor body and use of an LED semiconductor body
US8314431B2 (en) 2006-09-28 2012-11-20 Osram Opto Semiconductors Gmbh LED semiconductor element having increased luminance
DE102006051745B4 (en) 2006-09-28 2024-02-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung LED semiconductor body and use of an LED semiconductor body

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee