JPS577981A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS577981A
JPS577981A JP8324580A JP8324580A JPS577981A JP S577981 A JPS577981 A JP S577981A JP 8324580 A JP8324580 A JP 8324580A JP 8324580 A JP8324580 A JP 8324580A JP S577981 A JPS577981 A JP S577981A
Authority
JP
Japan
Prior art keywords
cds
film
sintered film
paste
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8324580A
Other languages
Japanese (ja)
Inventor
Nobuo Nakayama
Hitoshi Matsumoto
Akihiko Nakano
Seiji Ikegami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP8324580A priority Critical patent/JPS577981A/en
Publication of JPS577981A publication Critical patent/JPS577981A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type

Abstract

PURPOSE:To easily obtain the semiconductor device having optional shape and area by a method wherein a diode is constituted using a substrate consisting of a CdS polycrystalline film and a Te polycrystalline film. CONSTITUTION:CdS paste is screen-printed on a transparent glass substrate 1, calcinated in a nitrogenous atmosphere and a CdS sintered film 2 is formed. On the other hand, a proper quantity of organic caking agent is added to Te powder, Te paste is formed by mixing them and after this paste is screen-printed on the CdS sintered film 2, a sintering is performed in a nitrogenous atmosphere and a Te sintered film 3 is formed. Then, ohmic electrodes 4 and 5 are formed on the Te sintered film 3 and the CdS sintered film 2 respectively, and lead wires 6 and 7 are connected to these electrodes 4 and 5.
JP8324580A 1980-06-18 1980-06-18 Semiconductor device Pending JPS577981A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8324580A JPS577981A (en) 1980-06-18 1980-06-18 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8324580A JPS577981A (en) 1980-06-18 1980-06-18 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS577981A true JPS577981A (en) 1982-01-16

Family

ID=13796939

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8324580A Pending JPS577981A (en) 1980-06-18 1980-06-18 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS577981A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59155992U (en) * 1983-04-05 1984-10-19 ゼオン化成株式会社 Large liquid book processing container unit
JPS60111461A (en) * 1983-11-22 1985-06-17 Sharp Corp Picture reading element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59155992U (en) * 1983-04-05 1984-10-19 ゼオン化成株式会社 Large liquid book processing container unit
JPS60111461A (en) * 1983-11-22 1985-06-17 Sharp Corp Picture reading element
JPH0458699B2 (en) * 1983-11-22 1992-09-18 Sharp Kk

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