JPS5426676A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPS5426676A
JPS5426676A JP9193377A JP9193377A JPS5426676A JP S5426676 A JPS5426676 A JP S5426676A JP 9193377 A JP9193377 A JP 9193377A JP 9193377 A JP9193377 A JP 9193377A JP S5426676 A JPS5426676 A JP S5426676A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
sintering
silver
establish
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9193377A
Other languages
Japanese (ja)
Other versions
JPS6159547B2 (en
Inventor
Manabu Yoshida
Jun Fukuchi
Shigetoshi Takayanagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9193377A priority Critical patent/JPS5426676A/en
Priority to AU38236/78A priority patent/AU509758B2/en
Priority to DE19782833214 priority patent/DE2833214C2/en
Publication of JPS5426676A publication Critical patent/JPS5426676A/en
Publication of JPS6159547B2 publication Critical patent/JPS6159547B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

PURPOSE:To establish the solar cell having high conversion efficiency, by sintering the conductive paste constituted with mixed powder of Al or Ti and silver and with the glass powder not including lead at all under inactive gas including traces of O2.
JP9193377A 1977-07-29 1977-07-29 Semiconductor device and its manufacture Granted JPS5426676A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP9193377A JPS5426676A (en) 1977-07-29 1977-07-29 Semiconductor device and its manufacture
AU38236/78A AU509758B2 (en) 1977-07-29 1978-07-21 Ohmic electrode to semiconductor device
DE19782833214 DE2833214C2 (en) 1977-07-29 1978-07-28 Process for producing an electrode intended for a solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9193377A JPS5426676A (en) 1977-07-29 1977-07-29 Semiconductor device and its manufacture

Publications (2)

Publication Number Publication Date
JPS5426676A true JPS5426676A (en) 1979-02-28
JPS6159547B2 JPS6159547B2 (en) 1986-12-17

Family

ID=14040383

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9193377A Granted JPS5426676A (en) 1977-07-29 1977-07-29 Semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS5426676A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5636172A (en) * 1979-08-31 1981-04-09 Du Pont Thick film conductor composition
JPS5911687A (en) * 1982-07-12 1984-01-21 Mitsubishi Electric Corp Solar cell
JP2006041105A (en) * 2004-07-26 2006-02-09 Sharp Corp Solar cell and method of manufacturing the same
JP2016066800A (en) * 2007-07-20 2016-04-28 アルファ・メタルズ・インコーポレイテッドAlpha Metals, Inc. Device with conductor disposed on substrate, and method of forming conductor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002141520A (en) * 2000-10-31 2002-05-17 Kyocera Corp Solar cell element and its manufacturing method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5636172A (en) * 1979-08-31 1981-04-09 Du Pont Thick film conductor composition
JPS5911687A (en) * 1982-07-12 1984-01-21 Mitsubishi Electric Corp Solar cell
JP2006041105A (en) * 2004-07-26 2006-02-09 Sharp Corp Solar cell and method of manufacturing the same
JP2016066800A (en) * 2007-07-20 2016-04-28 アルファ・メタルズ・インコーポレイテッドAlpha Metals, Inc. Device with conductor disposed on substrate, and method of forming conductor

Also Published As

Publication number Publication date
JPS6159547B2 (en) 1986-12-17

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