JPH0467793B2 - - Google Patents
Info
- Publication number
- JPH0467793B2 JPH0467793B2 JP61170615A JP17061586A JPH0467793B2 JP H0467793 B2 JPH0467793 B2 JP H0467793B2 JP 61170615 A JP61170615 A JP 61170615A JP 17061586 A JP17061586 A JP 17061586A JP H0467793 B2 JPH0467793 B2 JP H0467793B2
- Authority
- JP
- Japan
- Prior art keywords
- hall element
- active region
- substrate
- ferrite
- mobility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 18
- 239000012535 impurity Substances 0.000 claims description 12
- 238000005468 ion implantation Methods 0.000 claims description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 3
- 230000001133 acceleration Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 229910000859 α-Fe Inorganic materials 0.000 description 15
- 239000010408 film Substances 0.000 description 9
- 238000002513 implantation Methods 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- -1 silicon ions Chemical class 0.000 description 9
- 230000005291 magnetic effect Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 230000004907 flux Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000003302 ferromagnetic material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/101—Semiconductor Hall-effect devices
Landscapes
- Hall/Mr Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61170615A JPS6327074A (ja) | 1986-07-18 | 1986-07-18 | ホール素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61170615A JPS6327074A (ja) | 1986-07-18 | 1986-07-18 | ホール素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6327074A JPS6327074A (ja) | 1988-02-04 |
| JPH0467793B2 true JPH0467793B2 (ko) | 1992-10-29 |
Family
ID=15908146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61170615A Granted JPS6327074A (ja) | 1986-07-18 | 1986-07-18 | ホール素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6327074A (ko) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51140494A (en) * | 1975-05-14 | 1976-12-03 | Ibm | Magnetic sensor |
| JPS5519896A (en) * | 1978-07-21 | 1980-02-12 | Stout Glenn M | Capsule filled hall effect device |
| JPS55117294A (en) * | 1979-02-28 | 1980-09-09 | Tdk Corp | Hall effect device |
-
1986
- 1986-07-18 JP JP61170615A patent/JPS6327074A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51140494A (en) * | 1975-05-14 | 1976-12-03 | Ibm | Magnetic sensor |
| JPS5519896A (en) * | 1978-07-21 | 1980-02-12 | Stout Glenn M | Capsule filled hall effect device |
| JPS55117294A (en) * | 1979-02-28 | 1980-09-09 | Tdk Corp | Hall effect device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6327074A (ja) | 1988-02-04 |
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