JPH0478034B2 - - Google Patents
Info
- Publication number
- JPH0478034B2 JPH0478034B2 JP58104426A JP10442683A JPH0478034B2 JP H0478034 B2 JPH0478034 B2 JP H0478034B2 JP 58104426 A JP58104426 A JP 58104426A JP 10442683 A JP10442683 A JP 10442683A JP H0478034 B2 JPH0478034 B2 JP H0478034B2
- Authority
- JP
- Japan
- Prior art keywords
- active layer
- gaas
- ion implantation
- manufacturing
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 33
- 238000005468 ion implantation Methods 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 2
- 230000005355 Hall effect Effects 0.000 claims 1
- 238000005530 etching Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000000137 annealing Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- KWLSQQRRSAWBOQ-UHFFFAOYSA-N dipotassioarsanylpotassium Chemical compound [K][As]([K])[K] KWLSQQRRSAWBOQ-UHFFFAOYSA-N 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- -1 silicon ions Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58104426A JPS59228783A (ja) | 1983-06-10 | 1983-06-10 | ＧａＡｓ半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58104426A JPS59228783A (ja) | 1983-06-10 | 1983-06-10 | ＧａＡｓ半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59228783A JPS59228783A (ja) | 1984-12-22 |
| JPH0478034B2 true JPH0478034B2 (ko) | 1992-12-10 |
Family
ID=14380359
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58104426A Granted JPS59228783A (ja) | 1983-06-10 | 1983-06-10 | ＧａＡｓ半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59228783A (ko) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63237586A (ja) * | 1987-03-26 | 1988-10-04 | Agency Of Ind Science & Technol | 微小ホ−ル素子の製造方法 |
| JP2589393B2 (ja) * | 1990-02-19 | 1997-03-12 | 旭化成工業株式会社 | ＧａＡｓホール素子 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5548927A (en) * | 1978-10-04 | 1980-04-08 | Mitsubishi Monsanto Chem Co | Preparation of semiconductor element |
| JPS5732687A (en) * | 1980-08-06 | 1982-02-22 | Toshiba Corp | Manufacture of magnetoelectric transducer |
-
1983
- 1983-06-10 JP JP58104426A patent/JPS59228783A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5548927A (en) * | 1978-10-04 | 1980-04-08 | Mitsubishi Monsanto Chem Co | Preparation of semiconductor element |
| JPS5732687A (en) * | 1980-08-06 | 1982-02-22 | Toshiba Corp | Manufacture of magnetoelectric transducer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59228783A (ja) | 1984-12-22 |
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