JPH0458688B2 - - Google Patents

Info

Publication number
JPH0458688B2
JPH0458688B2 JP58006868A JP686883A JPH0458688B2 JP H0458688 B2 JPH0458688 B2 JP H0458688B2 JP 58006868 A JP58006868 A JP 58006868A JP 686883 A JP686883 A JP 686883A JP H0458688 B2 JPH0458688 B2 JP H0458688B2
Authority
JP
Japan
Prior art keywords
film
tungsten
oxide film
oxidation
molybdenum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58006868A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59132136A (ja
Inventor
Nobuyoshi Kobayashi
Seiichi Iwata
Naoki Yamamoto
Hitoshi Matsuo
Teiichi Pponma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58006868A priority Critical patent/JPS59132136A/ja
Priority to KR1019840000207A priority patent/KR910007097B1/ko
Priority to DE8484100507T priority patent/DE3485622D1/de
Priority to EP84100507A priority patent/EP0116317B1/en
Priority to US06/571,946 priority patent/US4505028A/en
Publication of JPS59132136A publication Critical patent/JPS59132136A/ja
Publication of JPH0458688B2 publication Critical patent/JPH0458688B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10D64/011—
    • H10P14/6309—
    • H10P14/61—
    • H10P14/6322—
    • H10P14/69215—
    • H10P30/22—
    • H10P76/405—
    • H10P95/00—
    • H10W10/0126—
    • H10W10/13—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/909—Controlled atmosphere

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP58006868A 1983-01-19 1983-01-19 半導体装置の製造方法 Granted JPS59132136A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP58006868A JPS59132136A (ja) 1983-01-19 1983-01-19 半導体装置の製造方法
KR1019840000207A KR910007097B1 (ko) 1983-01-19 1984-01-18 반도체 장치의 제조 방법
DE8484100507T DE3485622D1 (de) 1983-01-19 1984-01-18 Verfahren zur herstellung einer halbleiteranordnung unter anwendung eines oxidationsschritts.
EP84100507A EP0116317B1 (en) 1983-01-19 1984-01-18 Method for producing a semiconductor device comprising an oxidation step
US06/571,946 US4505028A (en) 1983-01-19 1984-01-19 Method of producing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58006868A JPS59132136A (ja) 1983-01-19 1983-01-19 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59132136A JPS59132136A (ja) 1984-07-30
JPH0458688B2 true JPH0458688B2 (OSRAM) 1992-09-18

Family

ID=11650210

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58006868A Granted JPS59132136A (ja) 1983-01-19 1983-01-19 半導体装置の製造方法

Country Status (5)

Country Link
US (1) US4505028A (OSRAM)
EP (1) EP0116317B1 (OSRAM)
JP (1) JPS59132136A (OSRAM)
KR (1) KR910007097B1 (OSRAM)
DE (1) DE3485622D1 (OSRAM)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4587710A (en) * 1984-06-15 1986-05-13 Gould Inc. Method of fabricating a Schottky barrier field effect transistor
US5907188A (en) * 1995-08-25 1999-05-25 Kabushiki Kaisha Toshiba Semiconductor device with conductive oxidation preventing film and method for manufacturing the same
US5789312A (en) * 1996-10-30 1998-08-04 International Business Machines Corporation Method of fabricating mid-gap metal gates compatible with ultra-thin dielectrics
US6893980B1 (en) * 1996-12-03 2005-05-17 Kabushiki Kaisha Toshiba Semiconductor device and manufacturing method therefor
JPH10223900A (ja) * 1996-12-03 1998-08-21 Toshiba Corp 半導体装置及び半導体装置の製造方法
TW471068B (en) 1997-03-05 2002-01-01 Hitachi Ltd Method for fabricating semiconductor integrated circuit device with insulation film
JPH10335652A (ja) 1997-05-30 1998-12-18 Hitachi Ltd 半導体集積回路装置の製造方法
JPH10340909A (ja) 1997-06-06 1998-12-22 Hitachi Ltd 半導体集積回路装置の製造方法
JP4283904B2 (ja) 1997-07-11 2009-06-24 株式会社東芝 半導体装置の製造方法
US6037273A (en) * 1997-07-11 2000-03-14 Applied Materials, Inc. Method and apparatus for insitu vapor generation
US6159866A (en) * 1998-03-02 2000-12-12 Applied Materials, Inc. Method for insitu vapor generation for forming an oxide on a substrate
DE69840861D1 (de) * 1997-10-14 2009-07-16 Texas Instruments Inc Verfahren zum Oxidieren einer Struktur während der Herstellung einer Halbleitervorrichtung
US6452276B1 (en) 1998-04-30 2002-09-17 International Business Machines Corporation Ultra thin, single phase, diffusion barrier for metal conductors
JPH11330468A (ja) 1998-05-20 1999-11-30 Hitachi Ltd 半導体集積回路装置の製造方法および半導体集積回路装置
US6835672B1 (en) * 1998-10-15 2004-12-28 Texas Instruments Incorporated Selective oxidation for semiconductor device fabrication
US6162694A (en) * 1998-11-25 2000-12-19 Advanced Micro Devices, Inc. Method of forming a metal gate electrode using replaced polysilicon structure
DE19901210A1 (de) * 1999-01-14 2000-07-27 Siemens Ag Halbleiterbauelement und Verfahren zu dessen Herstellung
JP2000349285A (ja) 1999-06-04 2000-12-15 Hitachi Ltd 半導体集積回路装置の製造方法および半導体集積回路装置
TW434704B (en) * 1999-06-11 2001-05-16 Univ Nat Yunlin Sci & Tech Device of amorphous WO3 ion sensitive field effect transistor (ISFET) and method for making the same
US6555407B1 (en) 1999-10-26 2003-04-29 Zarlink Semiconductor Ab Method for the controlled oxidiation of materials
GB2355850A (en) * 1999-10-26 2001-05-02 Mitel Semiconductor Ab Forming oxide layers in semiconductor layers
JP2001274154A (ja) 2000-01-18 2001-10-05 Applied Materials Inc 成膜方法、成膜装置、半導体装置及びその製造方法
US6603181B2 (en) * 2001-01-16 2003-08-05 International Business Machines Corporation MOS device having a passivated semiconductor-dielectric interface
US7053459B2 (en) * 2001-03-12 2006-05-30 Renesas Technology Corp. Semiconductor integrated circuit device and process for producing the same
CN1290197C (zh) * 2001-03-12 2006-12-13 株式会社日立制作所 用于制造半导体集成电路器件的方法
KR100402389B1 (ko) * 2001-03-23 2003-10-17 삼성전자주식회사 금속 게이트 형성 방법
DE10120523A1 (de) * 2001-04-26 2002-10-31 Infineon Technologies Ag Verfahren zur Minimierung der Wolframoxidausdampfung bei der selektiven Seitenwandoxidation von Wolfram-Silizium-Gates
TW200416772A (en) * 2002-06-06 2004-09-01 Asml Us Inc System and method for hydrogen-rich selective oxidation
DE10236896B4 (de) * 2002-08-12 2010-08-12 Mattson Thermal Products Gmbh Vorrichtung und Verfahren zum thermischen Behandeln von Halbleiterwafern
KR100459725B1 (ko) * 2002-09-19 2004-12-03 삼성전자주식회사 금속 게이트 패턴을 갖는 반도체소자의 제조방법
JP2005101141A (ja) * 2003-09-24 2005-04-14 Renesas Technology Corp 半導体集積回路装置およびその製造方法
WO2005083795A1 (ja) * 2004-03-01 2005-09-09 Tokyo Electron Limited 半導体装置の製造方法及びプラズマ酸化処理方法
KR100966086B1 (ko) * 2005-03-08 2010-06-28 가부시키가이샤 히다치 고쿠사이 덴키 반도체장치의 제조 방법 및 기판처리장치
JP2007165788A (ja) * 2005-12-16 2007-06-28 Tokyo Electron Ltd 金属系膜の脱炭素処理方法、成膜方法および半導体装置の製造方法
US7951728B2 (en) * 2007-09-24 2011-05-31 Applied Materials, Inc. Method of improving oxide growth rate of selective oxidation processes
US8889565B2 (en) * 2009-02-13 2014-11-18 Asm International N.V. Selective removal of oxygen from metal-containing materials
US9127340B2 (en) * 2009-02-13 2015-09-08 Asm International N.V. Selective oxidation process

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3679492A (en) * 1970-03-23 1972-07-25 Ibm Process for making mosfet's
NL164424C (nl) * 1970-06-04 1980-12-15 Philips Nv Werkwijze voor het vervaardigen van een veldeffect- transistor met een geisoleerde stuurelektrode, waarbij een door een tegen oxydatie maskerende laag vrijgelaten deel van het oppervlak van een siliciumlichaam aan een oxydatiebehandeling wordt onderworpen ter verkrijging van een althans gedeeltelijk in het siliciumlichaam verzonken siliciumoxydelaag.
US3959025A (en) * 1974-05-01 1976-05-25 Rca Corporation Method of making an insulated gate field effect transistor
US4093503A (en) * 1977-03-07 1978-06-06 International Business Machines Corporation Method for fabricating ultra-narrow metallic lines
JPS5693314A (en) * 1979-12-26 1981-07-28 Fujitsu Ltd Ion injector

Also Published As

Publication number Publication date
KR910007097B1 (ko) 1991-09-18
EP0116317B1 (en) 1992-04-01
EP0116317A3 (en) 1987-07-22
US4505028A (en) 1985-03-19
DE3485622D1 (de) 1992-05-07
KR840007307A (ko) 1984-12-06
JPS59132136A (ja) 1984-07-30
EP0116317A2 (en) 1984-08-22

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