JPH0451821B2 - - Google Patents
Info
- Publication number
- JPH0451821B2 JPH0451821B2 JP62287369A JP28736987A JPH0451821B2 JP H0451821 B2 JPH0451821 B2 JP H0451821B2 JP 62287369 A JP62287369 A JP 62287369A JP 28736987 A JP28736987 A JP 28736987A JP H0451821 B2 JPH0451821 B2 JP H0451821B2
- Authority
- JP
- Japan
- Prior art keywords
- general formula
- formula
- quaternary ammonium
- carbon atoms
- developer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002736 nonionic surfactant Substances 0.000 claims description 47
- 229920001983 poloxamer Polymers 0.000 claims description 26
- 239000007864 aqueous solution Substances 0.000 claims description 21
- 239000003093 cationic surfactant Substances 0.000 claims description 21
- 229920002120 photoresistant polymer Polymers 0.000 claims description 15
- 125000000217 alkyl group Chemical group 0.000 claims description 13
- 125000004432 carbon atom Chemical group C* 0.000 claims description 13
- 125000001453 quaternary ammonium group Chemical group 0.000 claims description 13
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 12
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 claims description 11
- 229920002359 Tetronic® Polymers 0.000 claims description 7
- 150000003856 quaternary ammonium compounds Chemical class 0.000 claims description 7
- 239000000908 ammonium hydroxide Substances 0.000 claims description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- 239000004215 Carbon black (E152) Substances 0.000 claims description 3
- 229930195733 hydrocarbon Natural products 0.000 claims description 3
- 150000002430 hydrocarbons Chemical class 0.000 claims description 3
- 229920001451 polypropylene glycol Polymers 0.000 claims description 3
- 125000005189 alkyl hydroxy group Chemical group 0.000 claims description 2
- 125000002947 alkylene group Chemical group 0.000 claims description 2
- 125000005843 halogen group Chemical group 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 2
- 125000005010 perfluoroalkyl group Chemical group 0.000 claims description 2
- 230000000052 comparative effect Effects 0.000 description 20
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 20
- 238000011161 development Methods 0.000 description 13
- 230000035945 sensitivity Effects 0.000 description 12
- 239000000243 solution Substances 0.000 description 12
- 238000004090 dissolution Methods 0.000 description 11
- 238000011156 evaluation Methods 0.000 description 9
- 238000005187 foaming Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 230000007423 decrease Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 5
- 229960001231 choline Drugs 0.000 description 5
- 239000006260 foam Substances 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 239000002563 ionic surfactant Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- -1 naphthoquinone diazide compound Chemical class 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000004094 surface-active agent Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000012190 activator Substances 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 125000002091 cationic group Chemical group 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- FSJQUYQAQKLXGK-UHFFFAOYSA-N 2,2-dihydroxyethyl(dimethyl)azanium;hydroxide Chemical compound [OH-].C[NH+](C)CC(O)O FSJQUYQAQKLXGK-UHFFFAOYSA-N 0.000 description 1
- GAEXIJRVTSSOBA-UHFFFAOYSA-N 2,2-dihydroxyethyl-dodecyl-methylazanium;chloride Chemical compound [Cl-].CCCCCCCCCCCC[NH+](C)CC(O)O GAEXIJRVTSSOBA-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- CYDRXTMLKJDRQH-UHFFFAOYSA-N benzododecinium Chemical compound CCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 CYDRXTMLKJDRQH-UHFFFAOYSA-N 0.000 description 1
- 125000002843 carboxylic acid group Chemical group 0.000 description 1
- WOWHHFRSBJGXCM-UHFFFAOYSA-M cetyltrimethylammonium chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCC[N+](C)(C)C WOWHHFRSBJGXCM-UHFFFAOYSA-M 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- DDXLVDQZPFLQMZ-UHFFFAOYSA-M dodecyl(trimethyl)azanium;chloride Chemical compound [Cl-].CCCCCCCCCCCC[N+](C)(C)C DDXLVDQZPFLQMZ-UHFFFAOYSA-M 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- KVFVBPYVNUCWJX-UHFFFAOYSA-M ethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)C KVFVBPYVNUCWJX-UHFFFAOYSA-M 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- OQNCIVCOTSERAJ-UHFFFAOYSA-N methyl(2,2,2-trihydroxyethyl)azanium;hydroxide Chemical compound [OH-].C[NH2+]CC(O)(O)O OQNCIVCOTSERAJ-UHFFFAOYSA-N 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28736987A JPH01129250A (ja) | 1987-11-16 | 1987-11-16 | ポジ型フォトレジスト用現像液 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28736987A JPH01129250A (ja) | 1987-11-16 | 1987-11-16 | ポジ型フォトレジスト用現像液 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01129250A JPH01129250A (ja) | 1989-05-22 |
JPH0451821B2 true JPH0451821B2 (fr) | 1992-08-20 |
Family
ID=17716470
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP28736987A Granted JPH01129250A (ja) | 1987-11-16 | 1987-11-16 | ポジ型フォトレジスト用現像液 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01129250A (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999000707A1 (fr) * | 1997-06-27 | 1999-01-07 | Clariant International Ltd. | Revelateur pour agents de reserve |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2543742B2 (ja) * | 1988-04-07 | 1996-10-16 | 富士写真フイルム株式会社 | ポジ型フオトレジスト用現像液 |
JP2579189B2 (ja) * | 1988-05-13 | 1997-02-05 | コニカ株式会社 | 感光性平版印刷版の現像液組成物 |
US6007970A (en) * | 1992-02-07 | 1999-12-28 | Canon Kabushiki Kaisha | Lithographic developer containing surfactant |
DE69321627T2 (de) * | 1992-02-10 | 1999-04-22 | Canon K.K., Tokio/Tokyo | Lithographisches Verfahren |
JPH0643631A (ja) * | 1992-04-01 | 1994-02-18 | Internatl Business Mach Corp <Ibm> | 非イオン性ポリグリコールを含有するフォトレジスト |
JP4547491B2 (ja) * | 2000-04-28 | 2010-09-22 | 大日本印刷株式会社 | 顔料分散型感光性樹脂の現像方法、および光学的カラーフィルターの製造方法 |
JP4585136B2 (ja) * | 2001-03-29 | 2010-11-24 | メッツォペーパージャパン株式会社 | 巻取ロール押さえ装置および長尺材巻取り方法 |
JP4080784B2 (ja) | 2002-04-26 | 2008-04-23 | 東京応化工業株式会社 | レジスト用現像液及びそれを用いたレジストパターン形成方法、並びにレジスト用現像原液 |
JP4166167B2 (ja) | 2004-02-05 | 2008-10-15 | 富士フイルム株式会社 | 感光性平版印刷版用現像液及び平版印刷版の製版方法 |
JP5053592B2 (ja) * | 2006-08-10 | 2012-10-17 | 関東化学株式会社 | ポジ型レジスト処理液組成物及び現像液 |
JP7340969B2 (ja) | 2019-06-28 | 2023-09-08 | 東京応化工業株式会社 | シリコンエッチング液、シリコンエッチング方法、及びシリコンフィン構造体の製造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6118944A (ja) * | 1984-05-16 | 1986-01-27 | アライド・コ−ポレ−シヨン | 低金属イオンホトレジスト現像液 |
JPS61151537A (ja) * | 1984-12-25 | 1986-07-10 | Toshiba Corp | ポジ型フオトレジスト現像液組成物 |
JPS61167948A (ja) * | 1985-01-21 | 1986-07-29 | Mitsubishi Chem Ind Ltd | ポジ型感光性組成物用現像液 |
-
1987
- 1987-11-16 JP JP28736987A patent/JPH01129250A/ja active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6118944A (ja) * | 1984-05-16 | 1986-01-27 | アライド・コ−ポレ−シヨン | 低金属イオンホトレジスト現像液 |
JPS61151537A (ja) * | 1984-12-25 | 1986-07-10 | Toshiba Corp | ポジ型フオトレジスト現像液組成物 |
JPS61167948A (ja) * | 1985-01-21 | 1986-07-29 | Mitsubishi Chem Ind Ltd | ポジ型感光性組成物用現像液 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999000707A1 (fr) * | 1997-06-27 | 1999-01-07 | Clariant International Ltd. | Revelateur pour agents de reserve |
Also Published As
Publication number | Publication date |
---|---|
JPH01129250A (ja) | 1989-05-22 |
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