JPH0437590B2 - - Google Patents
Info
- Publication number
- JPH0437590B2 JPH0437590B2 JP57175072A JP17507282A JPH0437590B2 JP H0437590 B2 JPH0437590 B2 JP H0437590B2 JP 57175072 A JP57175072 A JP 57175072A JP 17507282 A JP17507282 A JP 17507282A JP H0437590 B2 JPH0437590 B2 JP H0437590B2
- Authority
- JP
- Japan
- Prior art keywords
- protrusion
- semiconductor substrate
- capacitor
- recess
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
Landscapes
- Semiconductor Memories (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57175072A JPS5965466A (ja) | 1982-10-05 | 1982-10-05 | 半導体記憶装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57175072A JPS5965466A (ja) | 1982-10-05 | 1982-10-05 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5965466A JPS5965466A (ja) | 1984-04-13 |
JPH0437590B2 true JPH0437590B2 (enrdf_load_stackoverflow) | 1992-06-19 |
Family
ID=15989735
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57175072A Granted JPS5965466A (ja) | 1982-10-05 | 1982-10-05 | 半導体記憶装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5965466A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61222255A (ja) * | 1985-03-28 | 1986-10-02 | Fujitsu Ltd | 半導体記憶装置の製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6037619B2 (ja) * | 1976-11-17 | 1985-08-27 | 株式会社東芝 | 半導体メモリ装置 |
JPS5521102A (en) * | 1978-08-01 | 1980-02-15 | Toshiba Corp | Semiconductor memory cell |
JPS5834949B2 (ja) * | 1980-12-01 | 1983-07-29 | 三菱電機株式会社 | 半導体メモリ装置 |
-
1982
- 1982-10-05 JP JP57175072A patent/JPS5965466A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5965466A (ja) | 1984-04-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7271052B1 (en) | Long retention time single transistor vertical memory gain cell | |
US7323380B2 (en) | Single transistor vertical memory gain cell | |
JPS5982761A (ja) | 半導体メモリ | |
US7259415B1 (en) | Long retention time single transistor vertical memory gain cell | |
US5519243A (en) | Semiconductor device and manufacturing method thereof | |
JPS6025269A (ja) | 半導体記憶素子 | |
JPS61140170A (ja) | 半導体記憶装置 | |
JPS6173366A (ja) | 半導体装置 | |
JPH01146354A (ja) | 半導体記憶装置 | |
JPS60189964A (ja) | 半導体メモリ | |
JPH0150114B2 (enrdf_load_stackoverflow) | ||
JP3193581B2 (ja) | 1トランジスタ1キャパシタ型のダイナミックランダムアクセスメモリ | |
JPH0576785B2 (enrdf_load_stackoverflow) | ||
JPS6173367A (ja) | 半導体装置 | |
JPH0437590B2 (enrdf_load_stackoverflow) | ||
JP2936659B2 (ja) | ダイナミック型メモリ装置 | |
JP2574231B2 (ja) | 半導体メモリ装置 | |
JPS62137863A (ja) | 半導体メモリ装置 | |
JP2503689B2 (ja) | 半導体記憶装置 | |
JPS5978565A (ja) | 半導体メモリセル | |
JPS62248248A (ja) | 半導体記憶装置 | |
JPH0691216B2 (ja) | 半導体記憶装置 | |
US5424566A (en) | DRAM cell capacitor | |
JPH06302781A (ja) | 半導体装置 | |
JPH0354866B2 (enrdf_load_stackoverflow) |