JPH0354866B2 - - Google Patents

Info

Publication number
JPH0354866B2
JPH0354866B2 JP59172002A JP17200284A JPH0354866B2 JP H0354866 B2 JPH0354866 B2 JP H0354866B2 JP 59172002 A JP59172002 A JP 59172002A JP 17200284 A JP17200284 A JP 17200284A JP H0354866 B2 JPH0354866 B2 JP H0354866B2
Authority
JP
Japan
Prior art keywords
mos
substrate
voltage
bias voltage
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59172002A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6149456A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP59172002A priority Critical patent/JPS6149456A/ja
Publication of JPS6149456A publication Critical patent/JPS6149456A/ja
Publication of JPH0354866B2 publication Critical patent/JPH0354866B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP59172002A 1984-08-17 1984-08-17 Ｍｏｓ型半導体集積回路装置 Granted JPS6149456A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59172002A JPS6149456A (ja) 1984-08-17 1984-08-17 Ｍｏｓ型半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59172002A JPS6149456A (ja) 1984-08-17 1984-08-17 Ｍｏｓ型半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS6149456A JPS6149456A (ja) 1986-03-11
JPH0354866B2 true JPH0354866B2 (enrdf_load_stackoverflow) 1991-08-21

Family

ID=15933696

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59172002A Granted JPS6149456A (ja) 1984-08-17 1984-08-17 Ｍｏｓ型半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS6149456A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5896690A (ja) * 1981-12-03 1983-06-08 Electric Power Dev Co Ltd 石炭の高濃度スラリ−の製造方法
JPS63165366U (enrdf_load_stackoverflow) * 1987-04-17 1988-10-27
US6923425B2 (en) 2001-02-28 2005-08-02 Zurn Industries, Inc. Flush valve diaphragm

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4115710A (en) * 1976-12-27 1978-09-19 Texas Instruments Incorporated Substrate bias for MOS integrated circuit

Also Published As

Publication number Publication date
JPS6149456A (ja) 1986-03-11

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term