JPH0436257U - - Google Patents

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Publication number
JPH0436257U
JPH0436257U JP7761590U JP7761590U JPH0436257U JP H0436257 U JPH0436257 U JP H0436257U JP 7761590 U JP7761590 U JP 7761590U JP 7761590 U JP7761590 U JP 7761590U JP H0436257 U JPH0436257 U JP H0436257U
Authority
JP
Japan
Prior art keywords
region
back gate
gate region
conductivity type
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7761590U
Other languages
English (en)
Other versions
JP2523466Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1990077615U priority Critical patent/JP2523466Y2/ja
Publication of JPH0436257U publication Critical patent/JPH0436257U/ja
Application granted granted Critical
Publication of JP2523466Y2 publication Critical patent/JP2523466Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Description

【図面の簡単な説明】
第１図はこの考案の第１の実施例で、ａはその
素子断面図、ｂは等価回路を示す。第２図は第２
の実施例の素子断面図である。第３図は従来の素
子断面図ａと等価回路図ｂを示す。 ２……Ｎ−型半導体基板（コレクタ・ドレイン
領域）、３……Ｐ−型（ベース・バツクゲート）
領域、４……Ｐ＋型ベース引出し領域、５……Ｎ
＋型（エミツタ・ソース）領域、７……ゲート酸
化膜、８……ゲート電極、９……ベース抵抗領域
、１０……Ｎ＋型半導体層、１１……ベース抵抗
層、Ｒ……ベース抵抗、Ｒ′……第２抵抗。

Claims (1)

  1. 【実用新案登録請求の範囲】 (1) ドレイン領域となる一導電型半導体基板に
    選択的に形成した他導電型のバツクゲート領域と
    、バツクゲート領域の中央部に選択的に形成した
    一導電型のソース領域と、上記ドレイン・ソース
    領域間のバツクゲート領域表面に酸化膜を介して
    ゲート電極を形成したものにおいて、 バツクゲート領域とゲート電極を抵抗を介し接
    続したトランジスタ。 (2) 請求項(1)において、さらにバツクゲート領
    域とソース領域を第２の抵抗を介して接続したト
    ランジスタ。
JP1990077615U 1990-07-20 1990-07-20 トランジスタ Expired - Lifetime JP2523466Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1990077615U JP2523466Y2 (ja) 1990-07-20 1990-07-20 トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1990077615U JP2523466Y2 (ja) 1990-07-20 1990-07-20 トランジスタ

Publications (2)

Publication Number Publication Date
JPH0436257U true JPH0436257U (ja) 1992-03-26
JP2523466Y2 JP2523466Y2 (ja) 1997-01-22

Family

ID=31620166

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1990077615U Expired - Lifetime JP2523466Y2 (ja) 1990-07-20 1990-07-20 トランジスタ

Country Status (1)

Country Link
JP (1) JP2523466Y2 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012253752A (ja) * 2011-05-06 2012-12-20 Semiconductor Energy Lab Co Ltd 半導体装置
US8836042B2 (en) 2008-08-11 2014-09-16 Fuji Electric Co., Ltd. Semiconductor device comprising an IGBT and a constant voltage circuit having switches and normally-on type MOSFETs connected in parallel

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01135072A (ja) * 1987-11-20 1989-05-26 Nissan Motor Co Ltd 縦形ｍｏｓｆｅｔ

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01135072A (ja) * 1987-11-20 1989-05-26 Nissan Motor Co Ltd 縦形ｍｏｓｆｅｔ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8836042B2 (en) 2008-08-11 2014-09-16 Fuji Electric Co., Ltd. Semiconductor device comprising an IGBT and a constant voltage circuit having switches and normally-on type MOSFETs connected in parallel
JP2012253752A (ja) * 2011-05-06 2012-12-20 Semiconductor Energy Lab Co Ltd 半導体装置

Also Published As

Publication number Publication date
JP2523466Y2 (ja) 1997-01-22

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