JP2012253752A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2012253752A JP2012253752A JP2012104643A JP2012104643A JP2012253752A JP 2012253752 A JP2012253752 A JP 2012253752A JP 2012104643 A JP2012104643 A JP 2012104643A JP 2012104643 A JP2012104643 A JP 2012104643A JP 2012253752 A JP2012253752 A JP 2012253752A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/20—Modifications for resetting core switching units to a predetermined state
Abstract
【解決手段】電源電圧が停止しても導通状態に関するデータの保持を、チャネル形成領域に酸化物半導体層を有する薄膜トランジスタに接続されたデータ保持部で行う構成とする。そしてデータ保持部は、ダーリントン接続された電界効果トランジスタ及びバイポーラトランジスタを有する電流増幅回路における、電界効果トランジスタのゲートに接続することでデータ保持部の電荷をリークすることなく、導通状態を制御する。
【選択図】図1
Description
本実施の形態で説明する半導体装置は、不揮発性のスイッチ、特に大電流を流すことが可能な不揮発性のスイッチとして機能する回路とすることができる。本実施の形態では、電気的制御が可能であり、不揮発性のスイッチとして機能する半導体装置の回路構成及びその動作について説明する。
本実施の形態では、上記実施の形態の半導体装置に適用可能なトランジスタの構成例について説明する。本実施の形態では特に、上記実施の形態で説明した構成において薄膜トランジスタ101を微細化して形成する際の構成例、及び作製工程の一例について示す。
101 薄膜トランジスタ
102 電流増幅回路
103 電界効果トランジスタ
104 バイポーラトランジスタ
105 容量素子
111 pチャネル型トランジスタ
112 nチャネル型トランジスタ
113 pチャネル型トランジスタ
114 nチャネル型トランジスタ
115 pチャネル型トランジスタ
116 nチャネル型トランジスタ
117 nチャネル型トランジスタ
118 抵抗素子
119 nチャネル型トランジスタ
120 抵抗素子
601_A 絶縁層
601_B 絶縁層
603_A 半導体層
603_B 半導体層
604a_A 高濃度領域
604b_A 高濃度領域
604a_B 高濃度領域
604b_B 高濃度領域
605a_A 導電層
605a_B 導電層
605b_A 導電層
605b_B 導電層
606_A 絶縁層
606_B 絶縁層
607_A 導電層
607_B 導電層
608a_A 低濃度領域
608b_A 低濃度領域
608a_B 低濃度領域
608b_B 低濃度領域
609a_A 絶縁層
609a_B 絶縁層
609b_A 絶縁層
609b_B 絶縁層
Claims (5)
- 第1端子よりデータが供給され、チャネル形成領域に酸化物半導体層を有する薄膜トランジスタと、
電界効果トランジスタ及びバイポーラトランジスタがダーリントン接続された電流増幅回路と、を有し、
前記薄膜トランジスタの第2端子と、前記電界効果トランジスタのゲートと、容量素子の一方の電極と、が電気的に接続されるデータ保持部では、前記薄膜トランジスタを非導通状態にすることでデータを保持し、
前記データ保持部に保持された前記データに応じて前記電流増幅回路に流れる電流量を制御する半導体装置。 - 請求項1において、前記データは、前記薄膜トランジスタを非導通状態とする期間において、高電源電位をグラウンド電位とする半導体装置。
- 請求項1または請求項2において、前記薄膜トランジスタのゲート端子は、前記薄膜トランジスタの導通状態を制御する制御信号が供給される配線に接続される半導体装置。
- 請求項3において、前記制御信号は、前記薄膜トランジスタを非導通状態とする期間において、高電源電位をグラウンド電位とする半導体装置。
- 請求項1乃至請求項4のいずれか一において、前記酸化物半導体層は、In−Sn−Zn−O系酸化物半導体である半導体装置。
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JP2012104643A JP5933325B2 (ja) | 2011-05-06 | 2012-05-01 | 半導体装置 |
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JP2011103508 | 2011-05-06 | ||
JP2011103508 | 2011-05-06 | ||
JP2012104643A JP5933325B2 (ja) | 2011-05-06 | 2012-05-01 | 半導体装置 |
Publications (3)
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JP2012253752A true JP2012253752A (ja) | 2012-12-20 |
JP2012253752A5 JP2012253752A5 (ja) | 2015-06-18 |
JP5933325B2 JP5933325B2 (ja) | 2016-06-08 |
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JP2012104643A Expired - Fee Related JP5933325B2 (ja) | 2011-05-06 | 2012-05-01 | 半導体装置 |
Country Status (4)
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US (1) | US8824192B2 (ja) |
JP (1) | JP5933325B2 (ja) |
TW (1) | TWI524473B (ja) |
WO (1) | WO2012153473A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10770483B2 (en) | 2018-06-28 | 2020-09-08 | Sakai Display Products Corporation | Thin film transistor, display device and method for manufacturing thin film transistor |
Families Citing this family (1)
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US9887212B2 (en) * | 2014-03-14 | 2018-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
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US8824192B2 (en) | 2014-09-02 |
WO2012153473A1 (en) | 2012-11-15 |
JP5933325B2 (ja) | 2016-06-08 |
TW201312698A (zh) | 2013-03-16 |
TWI524473B (zh) | 2016-03-01 |
US20120281455A1 (en) | 2012-11-08 |
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