JPH0410216B2 - - Google Patents

Info

Publication number
JPH0410216B2
JPH0410216B2 JP57059249A JP5924982A JPH0410216B2 JP H0410216 B2 JPH0410216 B2 JP H0410216B2 JP 57059249 A JP57059249 A JP 57059249A JP 5924982 A JP5924982 A JP 5924982A JP H0410216 B2 JPH0410216 B2 JP H0410216B2
Authority
JP
Japan
Prior art keywords
layer
single crystal
carbon heater
polycrystalline
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57059249A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58176929A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP57059249A priority Critical patent/JPS58176929A/ja
Priority to DE8383302004T priority patent/DE3381126D1/de
Priority to EP83302004A priority patent/EP0091806B1/en
Publication of JPS58176929A publication Critical patent/JPS58176929A/ja
Priority to US06/837,318 priority patent/US4784723A/en
Publication of JPH0410216B2 publication Critical patent/JPH0410216B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3458—Monocrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/382—Scanning of a beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H10P34/422—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing using incoherent radiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP57059249A 1982-04-09 1982-04-09 半導体装置の製造方法 Granted JPS58176929A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP57059249A JPS58176929A (ja) 1982-04-09 1982-04-09 半導体装置の製造方法
DE8383302004T DE3381126D1 (de) 1982-04-09 1983-04-08 Verfahren zur herstellung einer monokristallinen halbleiterschicht.
EP83302004A EP0091806B1 (en) 1982-04-09 1983-04-08 A method for producing a single crystalline semiconductor layer
US06/837,318 US4784723A (en) 1982-04-09 1986-03-03 Method for producing a single-crystalline layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57059249A JPS58176929A (ja) 1982-04-09 1982-04-09 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58176929A JPS58176929A (ja) 1983-10-17
JPH0410216B2 true JPH0410216B2 (enExample) 1992-02-24

Family

ID=13107915

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57059249A Granted JPS58176929A (ja) 1982-04-09 1982-04-09 半導体装置の製造方法

Country Status (4)

Country Link
US (1) US4784723A (enExample)
EP (1) EP0091806B1 (enExample)
JP (1) JPS58176929A (enExample)
DE (1) DE3381126D1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0217179A3 (en) * 1985-09-30 1989-05-31 Allied Corporation A method for laser crystallization of semiconductor islands on transparent substrates
JPS62296509A (ja) * 1986-06-17 1987-12-23 Fujitsu Ltd 半導体装置の製造方法
US5238879A (en) * 1988-03-24 1993-08-24 Siemens Aktiengesellschaft Method for the production of polycrystalline layers having granular crystalline structure for thin-film semiconductor components such as solar cells
JPH02208293A (ja) * 1989-02-08 1990-08-17 Kanazawa Univ 多結晶シリコン膜の製造方法
JPH04253323A (ja) * 1991-01-29 1992-09-09 Mitsubishi Electric Corp 半導体装置の製造方法
US5540183A (en) * 1993-03-16 1996-07-30 Mitsubishi Denki Kabushiki Kaisha Zone-melting recrystallization of semiconductor materials
US6723590B1 (en) 1994-03-09 2004-04-20 Semiconductor Energy Laboratory Co., Ltd. Method for laser-processing semiconductor device
KR100321541B1 (ko) 1994-03-09 2002-06-20 야마자끼 순페이 능동 매트릭스 디스플레이 장치의 작동 방법
TW280037B (en) 1994-04-22 1996-07-01 Handotai Energy Kenkyusho Kk Drive circuit of active matrix type display device and manufacturing method
JP3897826B2 (ja) * 1994-08-19 2007-03-28 株式会社半導体エネルギー研究所 アクティブマトリクス型の表示装置
JP3841866B2 (ja) * 1996-03-04 2006-11-08 三菱電機株式会社 再結晶化材料の製法、その製造装置および加熱方法
JPH11214700A (ja) 1998-01-23 1999-08-06 Semiconductor Energy Lab Co Ltd 半導体表示装置
JPH11338439A (ja) 1998-03-27 1999-12-10 Semiconductor Energy Lab Co Ltd 半導体表示装置の駆動回路および半導体表示装置
JP3844613B2 (ja) 1998-04-28 2006-11-15 株式会社半導体エネルギー研究所 薄膜トランジスタ回路およびそれを用いた表示装置
US6872607B2 (en) 2000-03-21 2005-03-29 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6831299B2 (en) 2000-11-09 2004-12-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
EP1513299B1 (en) 2002-04-12 2009-06-10 Honda Giken Kogyo Kabushiki Kaisha Vehicle intercommunication apparatus
FR2843596B1 (fr) * 2002-08-19 2006-04-28 Laurent Andre Favaro Procede d'oxydation couche par couche du silicium
CN102160157B (zh) 2008-09-17 2015-11-25 应用材料公司 管理基板退火的热预算

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE970859C (de) * 1947-10-18 1958-11-06 Jens Axel Freudendahl Maehbinder
JPS4822660B1 (enExample) * 1969-10-06 1973-07-07
US4015100A (en) * 1974-01-07 1977-03-29 Avco Everett Research Laboratory, Inc. Surface modification
US4059461A (en) * 1975-12-10 1977-11-22 Massachusetts Institute Of Technology Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof
US4196041A (en) * 1976-02-09 1980-04-01 Motorola, Inc. Self-seeding conversion of polycrystalline silicon sheets to macrocrystalline by zone melting
JPS52143755A (en) * 1976-05-26 1977-11-30 Hitachi Ltd Laser, zone melting device
JPS535496A (en) * 1976-07-05 1978-01-19 Hitachi Ltd Laser machining method and device
JPS5680138A (en) * 1979-12-05 1981-07-01 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
JPS56108231A (en) * 1980-02-01 1981-08-27 Ushio Inc Annealing method of semiconductor wafer
JPS56142630A (en) * 1980-04-09 1981-11-07 Fujitsu Ltd Manufacture of semiconductor device
US4281030A (en) * 1980-05-12 1981-07-28 Bell Telephone Laboratories, Incorporated Implantation of vaporized material on melted substrates
JPS5792831A (en) * 1980-11-29 1982-06-09 Toshiba Corp Exposure to charged beam
US4415794A (en) * 1981-03-16 1983-11-15 Fairchild Camera And Instrument Corporation Laser scanning method for annealing, glass flow and related processes
JPS57162433A (en) * 1981-03-31 1982-10-06 Fujitsu Ltd Scanning method for energy beam
US4371421A (en) * 1981-04-16 1983-02-01 Massachusetts Institute Of Technology Lateral epitaxial growth by seeded solidification
JPS57183023A (en) * 1981-05-02 1982-11-11 Fujitsu Ltd Laser annealing
US4406709A (en) * 1981-06-24 1983-09-27 Bell Telephone Laboratories, Incorporated Method of increasing the grain size of polycrystalline materials by directed energy-beams
JPS5821319A (ja) * 1981-07-30 1983-02-08 Fujitsu Ltd レ−ザアニ−ル方法
US4466179A (en) * 1982-10-19 1984-08-21 Harris Corporation Method for providing polysilicon thin films of improved uniformity
US4444620A (en) * 1983-09-12 1984-04-24 Bell Telephone Laboratories, Incorporated Growth of oriented single crystal semiconductor on insulator
US4737233A (en) * 1984-10-22 1988-04-12 American Telephone And Telegraph Company, At&T Bell Laboratories Method for making semiconductor crystal films

Also Published As

Publication number Publication date
DE3381126D1 (de) 1990-02-22
US4784723A (en) 1988-11-15
EP0091806A3 (en) 1986-11-20
JPS58176929A (ja) 1983-10-17
EP0091806A2 (en) 1983-10-19
EP0091806B1 (en) 1990-01-17

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