JPH039628B2 - - Google Patents

Info

Publication number
JPH039628B2
JPH039628B2 JP60029775A JP2977585A JPH039628B2 JP H039628 B2 JPH039628 B2 JP H039628B2 JP 60029775 A JP60029775 A JP 60029775A JP 2977585 A JP2977585 A JP 2977585A JP H039628 B2 JPH039628 B2 JP H039628B2
Authority
JP
Japan
Prior art keywords
type
region
mos transistors
transistor
channel mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60029775A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61188962A (ja
Inventor
Tomio Yanagidaira
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP60029775A priority Critical patent/JPS61188962A/ja
Publication of JPS61188962A publication Critical patent/JPS61188962A/ja
Publication of JPH039628B2 publication Critical patent/JPH039628B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP60029775A 1985-02-18 1985-02-18 Ｃｍｏｓ半導体装置 Granted JPS61188962A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60029775A JPS61188962A (ja) 1985-02-18 1985-02-18 Ｃｍｏｓ半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60029775A JPS61188962A (ja) 1985-02-18 1985-02-18 Ｃｍｏｓ半導体装置

Publications (2)

Publication Number Publication Date
JPS61188962A JPS61188962A (ja) 1986-08-22
JPH039628B2 true JPH039628B2 (OSRAM) 1991-02-08

Family

ID=12285396

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60029775A Granted JPS61188962A (ja) 1985-02-18 1985-02-18 Ｃｍｏｓ半導体装置

Country Status (1)

Country Link
JP (1) JPS61188962A (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104326357A (zh) * 2014-10-15 2015-02-04 东莞市康德威变压器有限公司 一种三角形立体卷铁心吊具

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4832769B2 (ja) * 2005-02-14 2011-12-07 メニコン シンガポール ピーティーイー． リミテッド 包装体

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5931987B2 (ja) * 1977-01-11 1984-08-06 三洋電機株式会社 相補型ｍｏｓトランジスタ
JPS5591162A (en) * 1978-12-27 1980-07-10 Fujitsu Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104326357A (zh) * 2014-10-15 2015-02-04 东莞市康德威变压器有限公司 一种三角形立体卷铁心吊具

Also Published As

Publication number Publication date
JPS61188962A (ja) 1986-08-22

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term