JPH039616B2 - - Google Patents

Info

Publication number
JPH039616B2
JPH039616B2 JP61227252A JP22725286A JPH039616B2 JP H039616 B2 JPH039616 B2 JP H039616B2 JP 61227252 A JP61227252 A JP 61227252A JP 22725286 A JP22725286 A JP 22725286A JP H039616 B2 JPH039616 B2 JP H039616B2
Authority
JP
Japan
Prior art keywords
layer
melting point
high melting
point metal
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61227252A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6381948A (ja
Inventor
Kazuo Endo
Takashi Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP61227252A priority Critical patent/JPS6381948A/ja
Publication of JPS6381948A publication Critical patent/JPS6381948A/ja
Priority to US07/420,727 priority patent/US5087578A/en
Publication of JPH039616B2 publication Critical patent/JPH039616B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W20/40—
    • H10W72/012—
    • H10W72/07553—
    • H10W72/251—
    • H10W72/29—
    • H10W72/531—
    • H10W72/536—
    • H10W72/59—
    • H10W72/923—
    • H10W72/934—
    • H10W72/9415—
    • H10W72/952—
    • H10W72/983—

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP61227252A 1986-09-26 1986-09-26 多層配線半導体装置 Granted JPS6381948A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP61227252A JPS6381948A (ja) 1986-09-26 1986-09-26 多層配線半導体装置
US07/420,727 US5087578A (en) 1986-09-26 1989-10-11 Semiconductor device having multi-layered wiring

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61227252A JPS6381948A (ja) 1986-09-26 1986-09-26 多層配線半導体装置

Publications (2)

Publication Number Publication Date
JPS6381948A JPS6381948A (ja) 1988-04-12
JPH039616B2 true JPH039616B2 (enExample) 1991-02-08

Family

ID=16857902

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61227252A Granted JPS6381948A (ja) 1986-09-26 1986-09-26 多層配線半導体装置

Country Status (2)

Country Link
US (1) US5087578A (enExample)
JP (1) JPS6381948A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5227317A (en) * 1989-04-21 1993-07-13 Hitachi, Ltd. Method of manufacturing semiconductor integrated circuit bipolar transistor device
KR940008936B1 (ko) * 1990-02-15 1994-09-28 가부시끼가이샤 도시바 고순도 금속재와 그 성질을 이용한 반도체 장치 및 그 제조방법
US5641703A (en) * 1991-07-25 1997-06-24 Massachusetts Institute Of Technology Voltage programmable links for integrated circuits
CN1823410A (zh) * 2003-07-16 2006-08-23 皇家飞利浦电子股份有限公司 具有侧壁绝缘层的金属凸起和制造具有该金属凸起的芯片的方法
JP2005079122A (ja) * 2003-08-29 2005-03-24 Rikogaku Shinkokai 結晶性薄膜の作製方法
JP2019040924A (ja) * 2017-08-22 2019-03-14 新光電気工業株式会社 配線基板及びその製造方法と電子装置

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3675090A (en) * 1968-11-04 1972-07-04 Energy Conversion Devices Inc Film deposited semiconductor devices
US3664874A (en) * 1969-12-31 1972-05-23 Nasa Tungsten contacts on silicon substrates
US3614547A (en) * 1970-03-16 1971-10-19 Gen Electric Tungsten barrier electrical connection
US3946426A (en) * 1973-03-14 1976-03-23 Harris Corporation Interconnect system for integrated circuits
DE2315710C3 (de) * 1973-03-29 1975-11-13 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen einer Halbleiteranordnung
US3988823A (en) * 1974-08-26 1976-11-02 Hughes Aircraft Company Method for fabrication of multilayer interconnected microelectronic devices having small vias therein
US4309224A (en) * 1978-10-06 1982-01-05 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing a semiconductor device
JPS55132055A (en) * 1979-03-30 1980-10-14 Nec Corp Mos integrated circuit
JPS56150830A (en) * 1980-04-25 1981-11-21 Hitachi Ltd Semiconductor device
US4349584A (en) * 1981-04-28 1982-09-14 Rca Corporation Process for tapering openings in ternary glass coatings
US4363830A (en) * 1981-06-22 1982-12-14 Rca Corporation Method of forming tapered contact holes for integrated circuit devices
JPS5830154A (ja) * 1981-08-17 1983-02-22 Toshiba Corp 固定記憶半導体装置およびその製造方法
JPS6051272B2 (ja) * 1982-05-31 1985-11-13 株式会社東芝 積層型ｃｍｏｓインバ−タ装置
JPS592352A (ja) * 1982-06-28 1984-01-07 Toshiba Corp 半導体装置の製造方法
JPS5957457A (ja) * 1982-09-27 1984-04-03 Fujitsu Ltd 半導体装置の製造方法
US4502209A (en) * 1983-08-31 1985-03-05 At&T Bell Laboratories Forming low-resistance contact to silicon
JPS6053050A (ja) * 1983-09-02 1985-03-26 Oki Electric Ind Co Ltd 半導体装置の製造方法
JPS60115245A (ja) * 1983-11-28 1985-06-21 Toshiba Corp 半導体装置の製造方法
US4629635A (en) * 1984-03-16 1986-12-16 Genus, Inc. Process for depositing a low resistivity tungsten silicon composite film on a substrate
JPS6173350A (ja) * 1984-09-18 1986-04-15 Fujitsu Ltd 半導体装置の製造方法
US4631564A (en) * 1984-10-23 1986-12-23 Rca Corporation Gate shield structure for power MOS device
US4571816A (en) * 1984-12-11 1986-02-25 Rca Corporation Method of making a capacitor with standard self-aligned gate process
US4786962A (en) * 1986-06-06 1988-11-22 Hewlett-Packard Company Process for fabricating multilevel metal integrated circuits and structures produced thereby

Also Published As

Publication number Publication date
US5087578A (en) 1992-02-11
JPS6381948A (ja) 1988-04-12

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees