JPH0376592B2 - - Google Patents
Info
- Publication number
- JPH0376592B2 JPH0376592B2 JP58006912A JP691283A JPH0376592B2 JP H0376592 B2 JPH0376592 B2 JP H0376592B2 JP 58006912 A JP58006912 A JP 58006912A JP 691283 A JP691283 A JP 691283A JP H0376592 B2 JPH0376592 B2 JP H0376592B2
- Authority
- JP
- Japan
- Prior art keywords
- type
- conductivity type
- region
- type semiconductor
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 5
- 230000015556 catabolic process Effects 0.000 description 19
- 239000012535 impurity Substances 0.000 description 13
- 238000009792 diffusion process Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
- H10D62/156—Drain regions of DMOS transistors
- H10D62/157—Impurity concentrations or distributions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/662—Vertical DMOS [VDMOS] FETs having a drift region having a doping concentration that is higher between adjacent body regions relative to other parts of the drift region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58006912A JPS59132671A (ja) | 1983-01-19 | 1983-01-19 | 縦型ｍｏｓトランジスタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58006912A JPS59132671A (ja) | 1983-01-19 | 1983-01-19 | 縦型ｍｏｓトランジスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59132671A JPS59132671A (ja) | 1984-07-30 |
| JPH0376592B2 true JPH0376592B2 (en, 2012) | 1991-12-05 |
Family
ID=11651445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58006912A Granted JPS59132671A (ja) | 1983-01-19 | 1983-01-19 | 縦型ｍｏｓトランジスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59132671A (en, 2012) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2645100B2 (ja) * | 1988-09-07 | 1997-08-25 | 株式会社東芝 | 電界効果型半導体装置 |
| JPH04276663A (ja) * | 1991-03-05 | 1992-10-01 | Nec Yamagata Ltd | 半導体装置 |
| US5674766A (en) * | 1994-12-30 | 1997-10-07 | Siliconix Incorporated | Method of making a trench MOSFET with multi-resistivity drain to provide low on-resistance by varying dopant concentration in epitaxial layer |
| JPH08288503A (ja) * | 1995-04-11 | 1996-11-01 | Rohm Co Ltd | プレーナ型高耐圧縦型素子を有する半導体装置およびその製造方法 |
| SE9601178D0 (sv) * | 1996-03-27 | 1996-03-27 | Abb Research Ltd | A field controlled semiconductor device of SiC and a method for production thereof |
| JP4164962B2 (ja) | 1999-10-08 | 2008-10-15 | 株式会社デンソー | 絶縁ゲート型バイポーラトランジスタ |
| JP2001352070A (ja) | 2000-04-07 | 2001-12-21 | Denso Corp | 半導体装置およびその製造方法 |
| JP2019125621A (ja) * | 2018-01-12 | 2019-07-25 | トヨタ自動車株式会社 | 半導体装置 |
-
1983
- 1983-01-19 JP JP58006912A patent/JPS59132671A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59132671A (ja) | 1984-07-30 |
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