JPH0475668B2 - - Google Patents

Info

Publication number
JPH0475668B2
JPH0475668B2 JP58006913A JP691383A JPH0475668B2 JP H0475668 B2 JPH0475668 B2 JP H0475668B2 JP 58006913 A JP58006913 A JP 58006913A JP 691383 A JP691383 A JP 691383A JP H0475668 B2 JPH0475668 B2 JP H0475668B2
Authority
JP
Japan
Prior art keywords
region
type
semiconductor substrate
well region
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58006913A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59132672A (ja
Inventor
Kazuhiro Takenaka
Takeshi Ooguro
Teruyoshi Mihara
Koichi Murakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Motor Co Ltd
Original Assignee
Nissan Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Motor Co Ltd filed Critical Nissan Motor Co Ltd
Priority to JP58006913A priority Critical patent/JPS59132672A/ja
Publication of JPS59132672A publication Critical patent/JPS59132672A/ja
Publication of JPH0475668B2 publication Critical patent/JPH0475668B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/151—LDMOS having built-in components
    • H10D84/158—LDMOS having built-in components the built-in components being breakdown diodes, e.g. Zener diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/378—Contact regions to the substrate regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/20—Breakdown diodes, e.g. avalanche diodes
    • H10D8/25—Zener diodes 

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP58006913A 1983-01-19 1983-01-19 Ｍｏｓトランジスタ Granted JPS59132672A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58006913A JPS59132672A (ja) 1983-01-19 1983-01-19 Ｍｏｓトランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58006913A JPS59132672A (ja) 1983-01-19 1983-01-19 Ｍｏｓトランジスタ

Publications (2)

Publication Number Publication Date
JPS59132672A JPS59132672A (ja) 1984-07-30
JPH0475668B2 true JPH0475668B2 (en, 2012) 1992-12-01

Family

ID=11651472

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58006913A Granted JPS59132672A (ja) 1983-01-19 1983-01-19 Ｍｏｓトランジスタ

Country Status (1)

Country Link
JP (1) JPS59132672A (en, 2012)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2806503B2 (ja) * 1988-11-11 1998-09-30 三菱電機株式会社 半導体素子の短絡保護回路
JP2808882B2 (ja) * 1990-05-07 1998-10-08 富士電機株式会社 絶縁ゲート型バイポーラトランジスタ

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3024015A1 (de) * 1980-06-26 1982-01-07 Siemens AG, 1000 Berlin und 8000 München Steuerbarer halbleiterschalter
FR2507820A1 (fr) * 1981-06-16 1982-12-17 Thomson Csf Transistor bipolaire a commande par effet de champ au moyen d'une grille isolee

Also Published As

Publication number Publication date
JPS59132672A (ja) 1984-07-30

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