JPH0447986B2 - - Google Patents

Info

Publication number
JPH0447986B2
JPH0447986B2 JP57204793A JP20479382A JPH0447986B2 JP H0447986 B2 JPH0447986 B2 JP H0447986B2 JP 57204793 A JP57204793 A JP 57204793A JP 20479382 A JP20479382 A JP 20479382A JP H0447986 B2 JPH0447986 B2 JP H0447986B2
Authority
JP
Japan
Prior art keywords
substrate
diffusion region
drain
region
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57204793A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5994874A (ja
Inventor
Tamotsu Tominaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Motor Co Ltd
Original Assignee
Nissan Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Motor Co Ltd filed Critical Nissan Motor Co Ltd
Priority to JP57204793A priority Critical patent/JPS5994874A/ja
Publication of JPS5994874A publication Critical patent/JPS5994874A/ja
Publication of JPH0447986B2 publication Critical patent/JPH0447986B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
JP57204793A 1982-11-22 1982-11-22 Ｍｏｓトランジスタ Granted JPS5994874A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57204793A JPS5994874A (ja) 1982-11-22 1982-11-22 Ｍｏｓトランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57204793A JPS5994874A (ja) 1982-11-22 1982-11-22 Ｍｏｓトランジスタ

Publications (2)

Publication Number Publication Date
JPS5994874A JPS5994874A (ja) 1984-05-31
JPH0447986B2 true JPH0447986B2 (en, 2012) 1992-08-05

Family

ID=16496443

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57204793A Granted JPS5994874A (ja) 1982-11-22 1982-11-22 Ｍｏｓトランジスタ

Country Status (1)

Country Link
JP (1) JPS5994874A (en, 2012)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4979212B2 (ja) * 2005-08-31 2012-07-18 オンセミコンダクター・トレーディング・リミテッド 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPS5994874A (ja) 1984-05-31

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