JPH0369095B2 - - Google Patents
Info
- Publication number
- JPH0369095B2 JPH0369095B2 JP21395684A JP21395684A JPH0369095B2 JP H0369095 B2 JPH0369095 B2 JP H0369095B2 JP 21395684 A JP21395684 A JP 21395684A JP 21395684 A JP21395684 A JP 21395684A JP H0369095 B2 JPH0369095 B2 JP H0369095B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- present
- baking
- photoresist
- general formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229920002120 photoresistant polymer Polymers 0.000 claims description 22
- 150000001875 compounds Chemical group 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 10
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- 125000003545 alkoxy group Chemical group 0.000 claims description 2
- 125000003368 amide group Chemical group 0.000 claims description 2
- 125000006575 electron-withdrawing group Chemical group 0.000 claims description 2
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 150000002367 halogens Chemical class 0.000 claims 1
- 150000002431 hydrogen Chemical class 0.000 claims 1
- 239000006096 absorbing agent Substances 0.000 description 13
- 238000000859 sublimation Methods 0.000 description 8
- 230000008022 sublimation Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 230000002745 absorbent Effects 0.000 description 5
- 239000002250 absorbent Substances 0.000 description 5
- 238000002835 absorbance Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229920001971 elastomer Polymers 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000011358 absorbing material Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- -1 hydrogen halogen Chemical class 0.000 description 2
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 239000013557 residual solvent Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 1
- WQMWHMMJVJNCAL-UHFFFAOYSA-N 2,4-dimethylpenta-1,4-dien-3-one Chemical compound CC(=C)C(=O)C(C)=C WQMWHMMJVJNCAL-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- KGNDCEVUMONOKF-UGPLYTSKSA-N benzyl n-[(2r)-1-[(2s,4r)-2-[[(2s)-6-amino-1-(1,3-benzoxazol-2-yl)-1,1-dihydroxyhexan-2-yl]carbamoyl]-4-[(4-methylphenyl)methoxy]pyrrolidin-1-yl]-1-oxo-4-phenylbutan-2-yl]carbamate Chemical compound C1=CC(C)=CC=C1CO[C@H]1CN(C(=O)[C@@H](CCC=2C=CC=CC=2)NC(=O)OCC=2C=CC=CC=2)[C@H](C(=O)N[C@@H](CCCCN)C(O)(O)C=2OC3=CC=CC=C3N=2)C1 KGNDCEVUMONOKF-UGPLYTSKSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229940125833 compound 23 Drugs 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- IAZJBPYVKVBVSI-UHFFFAOYSA-N phenyl-(2-phenylphenyl)diazene Chemical class C1=CC=CC=C1N=NC1=CC=CC=C1C1=CC=CC=C1 IAZJBPYVKVBVSI-UHFFFAOYSA-N 0.000 description 1
- 229920002454 poly(glycidyl methacrylate) polymer Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21395684A JPS6193445A (ja) | 1984-10-12 | 1984-10-12 | 新規なフオトレジスト組成物 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21395684A JPS6193445A (ja) | 1984-10-12 | 1984-10-12 | 新規なフオトレジスト組成物 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6193445A JPS6193445A (ja) | 1986-05-12 |
| JPH0369095B2 true JPH0369095B2 (en, 2012) | 1991-10-30 |
Family
ID=16647837
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21395684A Granted JPS6193445A (ja) | 1984-10-12 | 1984-10-12 | 新規なフオトレジスト組成物 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6193445A (en, 2012) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0743538B2 (ja) * | 1984-10-19 | 1995-05-15 | 住友化学工業株式会社 | 配線パタ−ン形成方法 |
| JPH063543B2 (ja) * | 1985-05-24 | 1994-01-12 | 日本合成ゴム株式会社 | 集積回路製造用感紫外線ポシ型レジスト |
| JPS63286843A (ja) * | 1987-05-19 | 1988-11-24 | Nippon Zeon Co Ltd | ポジ型フォトレジスト組成物 |
| JP2654947B2 (ja) * | 1987-07-16 | 1997-09-17 | 日本ゼオン株式会社 | ポジ型フォトレジスト組成物 |
| DE3735852A1 (de) * | 1987-10-23 | 1989-05-03 | Hoechst Ag | Positiv arbeitendes lichtempfindliches gemisch, enthaltend einen farbstoff, und daraus hergestelltes positiv arbeitendes lichtempfindliches aufzeichnungsmaterial |
| US5218136A (en) * | 1987-12-28 | 1993-06-08 | Sumitomo Chemical Company, Limited | Styryl compounds, process for preparing the same and photoresist compositions comprising the same |
| JP2584316B2 (ja) * | 1988-06-30 | 1997-02-26 | 富士写真フイルム株式会社 | ポジ型フオトレジスト組成物 |
| US5362598A (en) * | 1989-04-10 | 1994-11-08 | Sumitomo Chemical Co., Ltd. | Quinone diazide photoresist composition containing alkali-soluble resin and an ultraviolet ray absorbing dye |
| JP2682126B2 (ja) * | 1989-04-10 | 1997-11-26 | 住友化学工業株式会社 | フォトレジスト組成物 |
| JP2625206B2 (ja) * | 1989-04-18 | 1997-07-02 | 富士写真フイルム株式会社 | フオトレジスト組成物 |
| US11472943B2 (en) * | 2017-07-26 | 2022-10-18 | Mitsui Chemicals, Inc. | Polymerizable composition for optical material, optical material, and application thereof |
-
1984
- 1984-10-12 JP JP21395684A patent/JPS6193445A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6193445A (ja) | 1986-05-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3184530B2 (ja) | 金属イオンレベルが低いフォトレジスト | |
| JP2003502698A (ja) | 電子線露光による１９３ｎｍ感光性フォトレジスト材料の改変 | |
| JPS6088941A (ja) | フオトレジスト組成物 | |
| JP2614847B2 (ja) | ポジ型感光性組成物 | |
| JPS59142538A (ja) | 感光性組成物 | |
| US4885232A (en) | High temperature post exposure baking treatment for positive photoresist compositions | |
| US4596763A (en) | Positive photoresist processing with mid U-V range exposure | |
| JPH0369095B2 (en, 2012) | ||
| US5612164A (en) | Positive photoresist composition comprising a mixed ester of trishydroxyphenyl ethane and a mixed ester of trihydroxybenzophenone | |
| KR20020054120A (ko) | 열산 발생제를 포함하는 포토레지스트 조성물을 이용하여포토레지스트 패턴 폭 감소 현상을 개선하는 방법 | |
| JPH0459630B2 (en, 2012) | ||
| JPS6173144A (ja) | ホトレジスト及びホトレジストパターンの形成方法 | |
| JPS58174941A (ja) | 新規な吸光剤及びそれを含有するホトレジスト組成物 | |
| JPS6134653B2 (en, 2012) | ||
| US6338930B1 (en) | Positive photoresist layer and a method for using the same | |
| JPH012034A (ja) | フォトレジスト組成物 | |
| JPS63161443A (ja) | フオトレジスト組成物 | |
| JPS6198344A (ja) | 新規なフオトレジスト組成物 | |
| EP0140376A2 (en) | Thermally stable positive resist | |
| JPH0339964A (ja) | 半導体装置の製造方法及びそれに用いるパターン形成用塗布溶液 | |
| KR100213589B1 (ko) | 나프토퀴논 디아지드 설폰산 혼합 에스테르를 함유하는 조성물 및 이를 사용하여 제조한 감방사선 기록 물질 | |
| JP2626068B2 (ja) | フォトレジスト組成物 | |
| JP2626067B2 (ja) | フォトレジスト組成物 | |
| WO2001022170A1 (fr) | Procede de formation d'un motif de resist presentant une resistance amelioree a la gravure seche | |
| JP2626070B2 (ja) | フォトレジスト組成物 |