JPH0357613B2 - - Google Patents

Info

Publication number
JPH0357613B2
JPH0357613B2 JP53124022A JP12402278A JPH0357613B2 JP H0357613 B2 JPH0357613 B2 JP H0357613B2 JP 53124022 A JP53124022 A JP 53124022A JP 12402278 A JP12402278 A JP 12402278A JP H0357613 B2 JPH0357613 B2 JP H0357613B2
Authority
JP
Japan
Prior art keywords
semiconductor
mis
hydrogen
fet
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP53124022A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5550664A (en
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP12402278A priority Critical patent/JPS5550664A/ja
Publication of JPS5550664A publication Critical patent/JPS5550664A/ja
Publication of JPH0357613B2 publication Critical patent/JPH0357613B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
JP12402278A 1978-10-07 1978-10-07 Semiconductor device and method of fabricating the same Granted JPS5550664A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12402278A JPS5550664A (en) 1978-10-07 1978-10-07 Semiconductor device and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12402278A JPS5550664A (en) 1978-10-07 1978-10-07 Semiconductor device and method of fabricating the same

Related Child Applications (5)

Application Number Title Priority Date Filing Date
JP60209747A Division JPS61116874A (ja) 1985-09-20 1985-09-20 絶縁ゲート型電界効果トランジスタの製造方法
JP60209746A Division JPH0644573B2 (ja) 1985-09-20 1985-09-20 珪素半導体装置作製方法
JP5346878A Division JPH07109897B2 (ja) 1993-12-27 1993-12-27 半導体装置の作製方法
JP5346877A Division JPH07109896B2 (ja) 1993-12-27 1993-12-27 薄膜半導体装置の作製方法
JP5346876A Division JP2540724B2 (ja) 1993-12-27 1993-12-27 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JPS5550664A JPS5550664A (en) 1980-04-12
JPH0357613B2 true JPH0357613B2 (enrdf_load_stackoverflow) 1991-09-02

Family

ID=14875085

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12402278A Granted JPS5550664A (en) 1978-10-07 1978-10-07 Semiconductor device and method of fabricating the same

Country Status (1)

Country Link
JP (1) JPS5550664A (enrdf_load_stackoverflow)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5713777A (en) 1980-06-30 1982-01-23 Shunpei Yamazaki Semiconductor device and manufacture thereof
US6900463B1 (en) 1980-06-30 2005-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2622661B2 (ja) * 1982-04-13 1997-06-18 セイコーエプソン株式会社 液晶表示パネル
JP2844333B2 (ja) * 1983-05-06 1999-01-06 セイコーエプソン株式会社 薄膜トランジスタの製造方法
US4727044A (en) * 1984-05-18 1988-02-23 Semiconductor Energy Laboratory Co., Ltd. Method of making a thin film transistor with laser recrystallized source and drain
JP2776820B2 (ja) * 1988-01-27 1998-07-16 ソニー株式会社 半導体装置の製造方法
JPH01212445A (ja) * 1988-02-19 1989-08-25 Nippon Telegr & Teleph Corp <Ntt> ヘテロ接合界面電荷補償方法
TW237562B (enrdf_load_stackoverflow) 1990-11-09 1995-01-01 Semiconductor Energy Res Co Ltd
US5849601A (en) * 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
KR950013784B1 (ko) * 1990-11-20 1995-11-16 가부시키가이샤 한도오따이 에네루기 겐큐쇼 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터
US6849872B1 (en) 1991-08-26 2005-02-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US6979840B1 (en) 1991-09-25 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having anodized metal film between the gate wiring and drain wiring
JP2814161B2 (ja) 1992-04-28 1998-10-22 株式会社半導体エネルギー研究所 アクティブマトリクス表示装置およびその駆動方法
US6693681B1 (en) 1992-04-28 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
JPH0787250B2 (ja) * 1992-09-21 1995-09-20 セイコーエプソン株式会社 薄膜トランジスタの製造方法
JPH07109894B2 (ja) * 1993-06-18 1995-11-22 株式会社半導体エネルギー研究所 半導体装置作製方法
JP2785173B2 (ja) * 1994-04-19 1998-08-13 株式会社半導体エネルギー研究所 Ｍｉｓ型半導体装置
JP3499327B2 (ja) * 1995-03-27 2004-02-23 株式会社半導体エネルギー研究所 表示装置の作製方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5731306B2 (enrdf_load_stackoverflow) * 1973-09-12 1982-07-03
JPS5055277A (enrdf_load_stackoverflow) * 1973-09-12 1975-05-15
US3969274A (en) * 1974-03-14 1976-07-13 National Distillers And Chemical Corporation Fixed bed catalyst

Also Published As

Publication number Publication date
JPS5550664A (en) 1980-04-12

Similar Documents

Publication Publication Date Title
JPS6245712B2 (enrdf_load_stackoverflow)
JPH0357613B2 (enrdf_load_stackoverflow)
KR100326694B1 (ko) 측면 방향 게터링을 이용한 반도체 장치 제조 방법
US20250066950A1 (en) Boron nitride layer, apparatus including the same, and method of fabricating the boron nitride layer
JP4105353B2 (ja) 半導体装置
US6228728B1 (en) Method of fabricating semiconductor device
JP2799304B2 (ja) 半導体素子のコンタクト導電層形成方法並に半導体素子のジャンクションおよびコンタクト導電層形成方法
US6969885B2 (en) Non-volatile semiconductor memory device with first and second nitride insulators
GB1566072A (en) Semiconductor device
JP2978746B2 (ja) 半導体装置の製造方法
US3547717A (en) Radiation resistant semiconductive device
JPH05243575A (ja) 薄膜トランジスタおよびその製造方法
JPS6263475A (ja) 半導体装置
JP2573137B2 (ja) 絶縁ゲート型電界効果トランジスタの製造方法
JPH0644573B2 (ja) 珪素半導体装置作製方法
JP2540724B2 (ja) 半導体装置の作製方法
JP2010093170A (ja) 半導体装置の製造方法
US5021358A (en) Semiconductor fabrication process using sacrificial oxidation to reduce tunnel formation during tungsten deposition
JP2621327B2 (ja) 半導体装置の製造方法
JPH07109894B2 (ja) 半導体装置作製方法
JPS62216273A (ja) 半導体装置
JP2718757B2 (ja) Ｍｏｓ型半導体装置及びその製造方法
JPS61116874A (ja) 絶縁ゲート型電界効果トランジスタの製造方法
JPS62216272A (ja) 半導体装置
JPH10321862A (ja) 薄膜トランジスタおよびその製造方法