JPS5550664A - Semiconductor device and method of fabricating the same - Google Patents
Semiconductor device and method of fabricating the sameInfo
- Publication number
- JPS5550664A JPS5550664A JP12402278A JP12402278A JPS5550664A JP S5550664 A JPS5550664 A JP S5550664A JP 12402278 A JP12402278 A JP 12402278A JP 12402278 A JP12402278 A JP 12402278A JP S5550664 A JPS5550664 A JP S5550664A
- Authority
- JP
- Japan
- Prior art keywords
- region
- film
- semiconductor device
- sio
- hcl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 1
- 150000004820 halides Chemical class 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 230000006798 recombination Effects 0.000 abstract 1
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12402278A JPS5550664A (en) | 1978-10-07 | 1978-10-07 | Semiconductor device and method of fabricating the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12402278A JPS5550664A (en) | 1978-10-07 | 1978-10-07 | Semiconductor device and method of fabricating the same |
Related Child Applications (5)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60209746A Division JPH0644573B2 (ja) | 1985-09-20 | 1985-09-20 | 珪素半導体装置作製方法 |
| JP60209747A Division JPS61116874A (ja) | 1985-09-20 | 1985-09-20 | 絶縁ゲート型電界効果トランジスタの製造方法 |
| JP5346876A Division JP2540724B2 (ja) | 1993-12-27 | 1993-12-27 | 半導体装置の作製方法 |
| JP5346878A Division JPH07109897B2 (ja) | 1993-12-27 | 1993-12-27 | 半導体装置の作製方法 |
| JP5346877A Division JPH07109896B2 (ja) | 1993-12-27 | 1993-12-27 | 薄膜半導体装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5550664A true JPS5550664A (en) | 1980-04-12 |
| JPH0357613B2 JPH0357613B2 (enrdf_load_stackoverflow) | 1991-09-02 |
Family
ID=14875085
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12402278A Granted JPS5550664A (en) | 1978-10-07 | 1978-10-07 | Semiconductor device and method of fabricating the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5550664A (enrdf_load_stackoverflow) |
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01192173A (ja) * | 1988-01-27 | 1989-08-02 | Sony Corp | 半導体装置の製造方法 |
| JPH01212445A (ja) * | 1988-02-19 | 1989-08-25 | Nippon Telegr & Teleph Corp <Ntt> | ヘテロ接合界面電荷補償方法 |
| JPH05243273A (ja) * | 1992-09-21 | 1993-09-21 | Seiko Epson Corp | 薄膜トランジスタの製造方法 |
| JPH06163900A (ja) * | 1982-04-13 | 1994-06-10 | Seiko Epson Corp | 薄膜トランジスタ |
| JPH06283550A (ja) * | 1993-06-18 | 1994-10-07 | Semiconductor Energy Lab Co Ltd | 半導体装置作製方法 |
| JPH06326311A (ja) * | 1994-04-19 | 1994-11-25 | Semiconductor Energy Lab Co Ltd | Ｍｉｓ型半導体装置 |
| US5543636A (en) * | 1984-05-18 | 1996-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate field effect transistor |
| JPH09167841A (ja) * | 1983-05-06 | 1997-06-24 | Seiko Epson Corp | 薄膜トランジスタの製造方法 |
| US5766977A (en) * | 1995-03-27 | 1998-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing semiconductor device |
| US5849601A (en) * | 1990-12-25 | 1998-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
| US5859445A (en) * | 1990-11-20 | 1999-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device including thin film transistors having spoiling impurities added thereto |
| US6261877B1 (en) | 1990-09-11 | 2001-07-17 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing gate insulated field effect transistors |
| US6355941B1 (en) | 1980-06-30 | 2002-03-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US6693681B1 (en) | 1992-04-28 | 2004-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving the same |
| US6849872B1 (en) | 1991-08-26 | 2005-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
| US6900463B1 (en) | 1980-06-30 | 2005-05-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US6979840B1 (en) | 1991-09-25 | 2005-12-27 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistors having anodized metal film between the gate wiring and drain wiring |
| US7554616B1 (en) | 1992-04-28 | 2009-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5055281A (enrdf_load_stackoverflow) * | 1973-09-12 | 1975-05-15 | ||
| JPS5055277A (enrdf_load_stackoverflow) * | 1973-09-12 | 1975-05-15 | ||
| JPS511389A (enrdf_load_stackoverflow) * | 1974-03-14 | 1976-01-08 | Nat Distillers Chem Corp |
-
1978
- 1978-10-07 JP JP12402278A patent/JPS5550664A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5055281A (enrdf_load_stackoverflow) * | 1973-09-12 | 1975-05-15 | ||
| JPS5055277A (enrdf_load_stackoverflow) * | 1973-09-12 | 1975-05-15 | ||
| JPS511389A (enrdf_load_stackoverflow) * | 1974-03-14 | 1976-01-08 | Nat Distillers Chem Corp |
Cited By (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6900463B1 (en) | 1980-06-30 | 2005-05-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US6355941B1 (en) | 1980-06-30 | 2002-03-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JPH06163900A (ja) * | 1982-04-13 | 1994-06-10 | Seiko Epson Corp | 薄膜トランジスタ |
| JPH09167841A (ja) * | 1983-05-06 | 1997-06-24 | Seiko Epson Corp | 薄膜トランジスタの製造方法 |
| US6221701B1 (en) | 1984-05-18 | 2001-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate field effect transistor and its manufacturing method |
| US6734499B1 (en) | 1984-05-18 | 2004-05-11 | Semiconductor Energy Laboratory Co., Ltd. | Operation method of semiconductor devices |
| US6680486B1 (en) | 1984-05-18 | 2004-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate field effect transistor and its manufacturing method |
| US5543636A (en) * | 1984-05-18 | 1996-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate field effect transistor |
| US6635520B1 (en) | 1984-05-18 | 2003-10-21 | Semiconductor Energy Laboratory Co., Ltd. | Operation method of semiconductor devices |
| JPH01192173A (ja) * | 1988-01-27 | 1989-08-02 | Sony Corp | 半導体装置の製造方法 |
| JPH01212445A (ja) * | 1988-02-19 | 1989-08-25 | Nippon Telegr & Teleph Corp <Ntt> | ヘテロ接合界面電荷補償方法 |
| US6261877B1 (en) | 1990-09-11 | 2001-07-17 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing gate insulated field effect transistors |
| US7507615B2 (en) | 1990-11-09 | 2009-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing gate insulated field effect transistors |
| US6566175B2 (en) | 1990-11-09 | 2003-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing gate insulated field effect transistors |
| US6011277A (en) * | 1990-11-20 | 2000-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Gate insulated field effect transistors and method of manufacturing the same |
| US5859445A (en) * | 1990-11-20 | 1999-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device including thin film transistors having spoiling impurities added thereto |
| US5849601A (en) * | 1990-12-25 | 1998-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
| US6023075A (en) * | 1990-12-25 | 2000-02-08 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
| US6849872B1 (en) | 1991-08-26 | 2005-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
| US7855106B2 (en) | 1991-08-26 | 2010-12-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| US6979840B1 (en) | 1991-09-25 | 2005-12-27 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistors having anodized metal film between the gate wiring and drain wiring |
| US7642584B2 (en) | 1991-09-25 | 2010-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| US6693681B1 (en) | 1992-04-28 | 2004-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving the same |
| US7554616B1 (en) | 1992-04-28 | 2009-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving the same |
| JPH05243273A (ja) * | 1992-09-21 | 1993-09-21 | Seiko Epson Corp | 薄膜トランジスタの製造方法 |
| JPH06283550A (ja) * | 1993-06-18 | 1994-10-07 | Semiconductor Energy Lab Co Ltd | 半導体装置作製方法 |
| JPH06326311A (ja) * | 1994-04-19 | 1994-11-25 | Semiconductor Energy Lab Co Ltd | Ｍｉｓ型半導体装置 |
| US5766977A (en) * | 1995-03-27 | 1998-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0357613B2 (enrdf_load_stackoverflow) | 1991-09-02 |
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