JPH0354870B2 - - Google Patents

Info

Publication number
JPH0354870B2
JPH0354870B2 JP60244091A JP24409185A JPH0354870B2 JP H0354870 B2 JPH0354870 B2 JP H0354870B2 JP 60244091 A JP60244091 A JP 60244091A JP 24409185 A JP24409185 A JP 24409185A JP H0354870 B2 JPH0354870 B2 JP H0354870B2
Authority
JP
Japan
Prior art keywords
semiconductor device
potential
holes
potential barrier
channels
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP60244091A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62105478A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP60244091A priority Critical patent/JPS62105478A/ja
Priority to EP86308406A priority patent/EP0225716B1/en
Priority to DE8686308406T priority patent/DE3685944T2/de
Publication of JPS62105478A publication Critical patent/JPS62105478A/ja
Priority to US07/298,841 priority patent/US4920400A/en
Publication of JPH0354870B2 publication Critical patent/JPH0354870B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/202—FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/87—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of PN-junction gate FETs

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP60244091A 1985-11-01 1985-11-01 半導体装置 Granted JPS62105478A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP60244091A JPS62105478A (ja) 1985-11-01 1985-11-01 半導体装置
EP86308406A EP0225716B1 (en) 1985-11-01 1986-10-29 Non-saturated current semiconductor device having two current paths
DE8686308406T DE3685944T2 (de) 1985-11-01 1986-10-29 Nichtgesaettigte stromhalbleiteranordnung mit zwei strompfaden.
US07/298,841 US4920400A (en) 1985-11-01 1989-01-18 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60244091A JPS62105478A (ja) 1985-11-01 1985-11-01 半導体装置

Publications (2)

Publication Number Publication Date
JPS62105478A JPS62105478A (ja) 1987-05-15
JPH0354870B2 true JPH0354870B2 (enExample) 1991-08-21

Family

ID=17113607

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60244091A Granted JPS62105478A (ja) 1985-11-01 1985-11-01 半導体装置

Country Status (4)

Country Link
US (1) US4920400A (enExample)
EP (1) EP0225716B1 (enExample)
JP (1) JPS62105478A (enExample)
DE (1) DE3685944T2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2752991B2 (ja) * 1988-07-14 1998-05-18 株式会社東芝 半導体装置
US5103415A (en) * 1989-01-13 1992-04-07 Kabushiki Kaisha Toshiba Computer-simulation technique for numerical analysis of semiconductor devices
US6201267B1 (en) 1999-03-01 2001-03-13 Rensselaer Polytechnic Institute Compact low power complement FETs

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3840888A (en) * 1969-12-30 1974-10-08 Ibm Complementary mosfet device structure
JPS526076B1 (enExample) * 1971-04-28 1977-02-18
DE2636873A1 (de) * 1976-08-17 1978-02-23 Siemens Ag Halbleiterbauelement mit zwei gekreuzten teildioden und mit transistorartigen eigenschaften
US4284997A (en) * 1977-07-07 1981-08-18 Zaidan Hojin Handotai Kenkyu Shinkokai Static induction transistor and its applied devices

Also Published As

Publication number Publication date
US4920400A (en) 1990-04-24
JPS62105478A (ja) 1987-05-15
EP0225716A3 (en) 1987-10-28
DE3685944D1 (de) 1992-08-13
EP0225716A2 (en) 1987-06-16
EP0225716B1 (en) 1992-07-08
DE3685944T2 (de) 1993-03-04

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