JPH033948B2 - - Google Patents

Info

Publication number
JPH033948B2
JPH033948B2 JP58151322A JP15132283A JPH033948B2 JP H033948 B2 JPH033948 B2 JP H033948B2 JP 58151322 A JP58151322 A JP 58151322A JP 15132283 A JP15132283 A JP 15132283A JP H033948 B2 JPH033948 B2 JP H033948B2
Authority
JP
Japan
Prior art keywords
silicon oxide
groove
film
glass layer
oxide glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58151322A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6043843A (ja
Inventor
Keimei Mikoshiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP15132283A priority Critical patent/JPS6043843A/ja
Publication of JPS6043843A publication Critical patent/JPS6043843A/ja
Publication of JPH033948B2 publication Critical patent/JPH033948B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
JP15132283A 1983-08-19 1983-08-19 半導体装置の製造方法 Granted JPS6043843A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15132283A JPS6043843A (ja) 1983-08-19 1983-08-19 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15132283A JPS6043843A (ja) 1983-08-19 1983-08-19 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6043843A JPS6043843A (ja) 1985-03-08
JPH033948B2 true JPH033948B2 (enrdf_load_stackoverflow) 1991-01-21

Family

ID=15516086

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15132283A Granted JPS6043843A (ja) 1983-08-19 1983-08-19 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6043843A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01185936A (ja) * 1988-01-21 1989-07-25 Fujitsu Ltd 半導体装置
US4952524A (en) * 1989-05-05 1990-08-28 At&T Bell Laboratories Semiconductor device manufacture including trench formation
JP2580787B2 (ja) * 1989-08-24 1997-02-12 日本電気株式会社 半導体装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5712533A (en) * 1980-06-26 1982-01-22 Fujitsu Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS6043843A (ja) 1985-03-08

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