JPH0332212B2 - - Google Patents

Info

Publication number
JPH0332212B2
JPH0332212B2 JP56159812A JP15981281A JPH0332212B2 JP H0332212 B2 JPH0332212 B2 JP H0332212B2 JP 56159812 A JP56159812 A JP 56159812A JP 15981281 A JP15981281 A JP 15981281A JP H0332212 B2 JPH0332212 B2 JP H0332212B2
Authority
JP
Japan
Prior art keywords
wafer
disk
wax
mirror
parallel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56159812A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5860541A (ja
Inventor
Hiroshi Torii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Priority to JP15981281A priority Critical patent/JPS5860541A/ja
Publication of JPS5860541A publication Critical patent/JPS5860541A/ja
Publication of JPH0332212B2 publication Critical patent/JPH0332212B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP15981281A 1981-10-07 1981-10-07 ウエハの加工方法 Granted JPS5860541A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15981281A JPS5860541A (ja) 1981-10-07 1981-10-07 ウエハの加工方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15981281A JPS5860541A (ja) 1981-10-07 1981-10-07 ウエハの加工方法

Publications (2)

Publication Number Publication Date
JPS5860541A JPS5860541A (ja) 1983-04-11
JPH0332212B2 true JPH0332212B2 (fr) 1991-05-10

Family

ID=15701785

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15981281A Granted JPS5860541A (ja) 1981-10-07 1981-10-07 ウエハの加工方法

Country Status (1)

Country Link
JP (1) JPS5860541A (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2534210B2 (ja) * 1989-04-03 1996-09-11 三菱電機株式会社 ウエハ剥し装置
JP2011025338A (ja) * 2009-07-23 2011-02-10 Disco Abrasive Syst Ltd 板状物固定方法
JP2012049448A (ja) * 2010-08-30 2012-03-08 Mitsubishi Chemicals Corp 窒化物半導体基板の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56164535A (en) * 1980-05-23 1981-12-17 Toshiba Corp Manufacture of semicondutor element
JPS57147241A (en) * 1981-03-05 1982-09-11 Nec Corp Bonding method for crystal wafer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56164535A (en) * 1980-05-23 1981-12-17 Toshiba Corp Manufacture of semicondutor element
JPS57147241A (en) * 1981-03-05 1982-09-11 Nec Corp Bonding method for crystal wafer

Also Published As

Publication number Publication date
JPS5860541A (ja) 1983-04-11

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