JPS56164535A - Manufacture of semicondutor element - Google Patents

Manufacture of semicondutor element

Info

Publication number
JPS56164535A
JPS56164535A JP6856780A JP6856780A JPS56164535A JP S56164535 A JPS56164535 A JP S56164535A JP 6856780 A JP6856780 A JP 6856780A JP 6856780 A JP6856780 A JP 6856780A JP S56164535 A JPS56164535 A JP S56164535A
Authority
JP
Japan
Prior art keywords
wafer
polished
chuck
mirror
wax
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6856780A
Other languages
Japanese (ja)
Inventor
Yoshinori Natsume
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6856780A priority Critical patent/JPS56164535A/en
Publication of JPS56164535A publication Critical patent/JPS56164535A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing

Abstract

PURPOSE:To flatten the mirror-polished surface of a semiconductor wafer by attracting the wafer onto a rotatable vacuum attraction chuck with the surface to be polished downside when polishing the wafer, and uniformly forming by heating an adhesive on nonpolished surface of the wafer while rotating the chuck. CONSTITUTION:The semiconductor wafer 13 is attracted onto a sufficiently flat and rotatably vacuum attaction chuck 21 with the surface to be polished downside, and wax 12 is placed on the surface not to be polished. Then, the wax 12 is heated and molten by a heating lamp 22 while rotating the chuck 21, is flowed to the surface not to be polished of the wafer 13 in a uniformly coated state, the wafer is then removed from the chuck 21, and the wafer 13 is placed on the plate 11 with the wax 12 side downside. Thereafter, pressure P is applied from the mirror-polished surface of the wafer 13 toward the plate 11, and the wafer 13 rigidly fixed onto the plate 11. Thus, no warpage occurs at the wafer when the wafer 13 is mirror-polished, and preferable mirror surface can be obtained on the wafer.
JP6856780A 1980-05-23 1980-05-23 Manufacture of semicondutor element Pending JPS56164535A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6856780A JPS56164535A (en) 1980-05-23 1980-05-23 Manufacture of semicondutor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6856780A JPS56164535A (en) 1980-05-23 1980-05-23 Manufacture of semicondutor element

Publications (1)

Publication Number Publication Date
JPS56164535A true JPS56164535A (en) 1981-12-17

Family

ID=13377464

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6856780A Pending JPS56164535A (en) 1980-05-23 1980-05-23 Manufacture of semicondutor element

Country Status (1)

Country Link
JP (1) JPS56164535A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5860541A (en) * 1981-10-07 1983-04-11 Toshiba Ceramics Co Ltd Processing method for wafer
EP0264957A2 (en) * 1986-10-23 1988-04-27 Mitsubishi Materials Corporation Method and apparatus for application of wax on wafers
EP0810635A1 (en) * 1996-05-31 1997-12-03 MEMC Electronic Materials, Inc. Method and apparatus for mounting a semiconductor wafer on a polishing block by applying radiant heat
JP2011025338A (en) * 2009-07-23 2011-02-10 Disco Abrasive Syst Ltd Plate-like object fixing method
JP2012049448A (en) * 2010-08-30 2012-03-08 Mitsubishi Chemicals Corp Method of manufacturing nitride semiconductor substrate
KR101133121B1 (en) 2005-02-17 2012-04-06 삼성테크윈 주식회사 Jig for accommodating wafer, coating apparatus for wafer, and method for manufacturing semiconductor device using the same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5860541A (en) * 1981-10-07 1983-04-11 Toshiba Ceramics Co Ltd Processing method for wafer
JPH0332212B2 (en) * 1981-10-07 1991-05-10 Toshiba Ceramics Co
EP0264957A2 (en) * 1986-10-23 1988-04-27 Mitsubishi Materials Corporation Method and apparatus for application of wax on wafers
EP0810635A1 (en) * 1996-05-31 1997-12-03 MEMC Electronic Materials, Inc. Method and apparatus for mounting a semiconductor wafer on a polishing block by applying radiant heat
KR101133121B1 (en) 2005-02-17 2012-04-06 삼성테크윈 주식회사 Jig for accommodating wafer, coating apparatus for wafer, and method for manufacturing semiconductor device using the same
JP2011025338A (en) * 2009-07-23 2011-02-10 Disco Abrasive Syst Ltd Plate-like object fixing method
JP2012049448A (en) * 2010-08-30 2012-03-08 Mitsubishi Chemicals Corp Method of manufacturing nitride semiconductor substrate

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