JPS5795632A - Jig for etching back surface of semiconductor wafer - Google Patents

Jig for etching back surface of semiconductor wafer

Info

Publication number
JPS5795632A
JPS5795632A JP17127280A JP17127280A JPS5795632A JP S5795632 A JPS5795632 A JP S5795632A JP 17127280 A JP17127280 A JP 17127280A JP 17127280 A JP17127280 A JP 17127280A JP S5795632 A JPS5795632 A JP S5795632A
Authority
JP
Japan
Prior art keywords
wafer
jig
wax
attaching part
back surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17127280A
Other languages
Japanese (ja)
Inventor
Takashi Honda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KIYUUSHIYUU NIPPON DENKI KK
NEC Kyushu Ltd
Original Assignee
KIYUUSHIYUU NIPPON DENKI KK
NEC Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KIYUUSHIYUU NIPPON DENKI KK, NEC Kyushu Ltd filed Critical KIYUUSHIYUU NIPPON DENKI KK
Priority to JP17127280A priority Critical patent/JPS5795632A/en
Publication of JPS5795632A publication Critical patent/JPS5795632A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To prevent cracking of the wafer, by providing a recessed groove at the outer periphery of a wafer attaching part of the flat board shaped jig, describing a circle indicating the amount of wax on the attaching part, thereby eliminating the bump or unevenness of the wax. CONSTITUTION:The surface of the wafer 12 at the back of which etching is performed is layered on the jig 11 comprising e.g. a quartz plate via the wax 13. A load is applied on the wafer 14 with the wafer 14 being heated, and the wafer is stuck to the jig. The groove 16 whose width is 4mm. and depth is 0.5mm. is formed at the outer periphery of the wafer attaching part on said jig 11 so that the size of the groove is larger than the wafer 14 by 2mm.. The circle 15 whose diameter is smaller than the diameter of the wafer by 8mm. is described on the sticking plane. In this constitution, the wax can be uniformly applied without excess or shortage. Since the wax does not swell up at the periphery of the wafer when the load is applied, the flat etching can be performed on the back surface.
JP17127280A 1980-12-04 1980-12-04 Jig for etching back surface of semiconductor wafer Pending JPS5795632A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17127280A JPS5795632A (en) 1980-12-04 1980-12-04 Jig for etching back surface of semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17127280A JPS5795632A (en) 1980-12-04 1980-12-04 Jig for etching back surface of semiconductor wafer

Publications (1)

Publication Number Publication Date
JPS5795632A true JPS5795632A (en) 1982-06-14

Family

ID=15920244

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17127280A Pending JPS5795632A (en) 1980-12-04 1980-12-04 Jig for etching back surface of semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS5795632A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100401494C (en) * 2005-02-28 2008-07-09 大日本网目版制造株式会社 Wafer treating apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100401494C (en) * 2005-02-28 2008-07-09 大日本网目版制造株式会社 Wafer treating apparatus

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