JPS56169332A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56169332A
JPS56169332A JP7349980A JP7349980A JPS56169332A JP S56169332 A JPS56169332 A JP S56169332A JP 7349980 A JP7349980 A JP 7349980A JP 7349980 A JP7349980 A JP 7349980A JP S56169332 A JPS56169332 A JP S56169332A
Authority
JP
Japan
Prior art keywords
wafer
tape
stage
water
polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7349980A
Other languages
Japanese (ja)
Inventor
Koji Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Home Electronics Ltd
NEC Corp
Original Assignee
NEC Home Electronics Ltd
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Home Electronics Ltd, Nippon Electric Co Ltd filed Critical NEC Home Electronics Ltd
Priority to JP7349980A priority Critical patent/JPS56169332A/en
Publication of JPS56169332A publication Critical patent/JPS56169332A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PURPOSE:To enable the stable and accurate polishing of the back surface of a semiconductor wafer by bonding a tape on one side surface of the water and attracting by vacuum and fixing the wafer via the tape on a stage. CONSTITUTION:An adhesive 21 is coated on one side surface of a tape 20, and the surface m of a semiconductor wafer 4 is bonded to the adhesive 21. The wafer 4 is placed via the tape 20 on a stage 12, and the wafer 4 is attracted by vacuum onto the stage 12 by evacuating through porous layer 19 of the stage 12. Thus, the wafer 4 can be rigidly fixed on the stage 12. The wafer 4 thus fixed on the state 12 is polished on the back surface. The fixing strength of the wafer can be increased via the tape 20, the displacement of the water 4 can be eliminated in polishing the wafer, and the stable and accurate polishing of the water can be performed.
JP7349980A 1980-05-31 1980-05-31 Manufacture of semiconductor device Pending JPS56169332A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7349980A JPS56169332A (en) 1980-05-31 1980-05-31 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7349980A JPS56169332A (en) 1980-05-31 1980-05-31 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56169332A true JPS56169332A (en) 1981-12-26

Family

ID=13520000

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7349980A Pending JPS56169332A (en) 1980-05-31 1980-05-31 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56169332A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6394630A (en) * 1986-10-08 1988-04-25 Rohm Co Ltd Processing of rear of semiconductor wafer
US6726538B2 (en) 2000-04-07 2004-04-27 Tokyo Electron Limited Sample polishing apparatus and sample polishing method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS546455A (en) * 1977-06-17 1979-01-18 Hitachi Ltd Dicing method for semiconductor wafer
JPS5571026A (en) * 1978-11-24 1980-05-28 Hitachi Ltd Method and apparatus for grinding wafer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS546455A (en) * 1977-06-17 1979-01-18 Hitachi Ltd Dicing method for semiconductor wafer
JPS5571026A (en) * 1978-11-24 1980-05-28 Hitachi Ltd Method and apparatus for grinding wafer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6394630A (en) * 1986-10-08 1988-04-25 Rohm Co Ltd Processing of rear of semiconductor wafer
US6726538B2 (en) 2000-04-07 2004-04-27 Tokyo Electron Limited Sample polishing apparatus and sample polishing method

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