JPS57147241A - Bonding method for crystal wafer - Google Patents

Bonding method for crystal wafer

Info

Publication number
JPS57147241A
JPS57147241A JP3170181A JP3170181A JPS57147241A JP S57147241 A JPS57147241 A JP S57147241A JP 3170181 A JP3170181 A JP 3170181A JP 3170181 A JP3170181 A JP 3170181A JP S57147241 A JPS57147241 A JP S57147241A
Authority
JP
Japan
Prior art keywords
wafer
holder
chuck
attracting
crystal wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3170181A
Other languages
Japanese (ja)
Inventor
Michio Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3170181A priority Critical patent/JPS57147241A/en
Publication of JPS57147241A publication Critical patent/JPS57147241A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

PURPOSE:To enable setting of the surface of a crystal wafer parallel to and in the same plane as the surface of a polishing holder by attracting by vacuum the wafer to the flat chucking surface and bonding it to the holder while holding the wafer. CONSTITUTION:A chuck 15 of disc shape is provided on a polishing holder 13 on a hot plate 14. A hole 16 for attracting by vacuum a wafer 11 is opened at the chuck 15. When a hot plate 14 is heated so that the bonding wax 12 on the holder 13 is molten, the chuck 13 attracting the wafer 11 is placed on the wax, and the height h from the surface of the holder 13 to the wafer is set to the same size by a micrometer head 17 provided at the outer periphery of the chuck 15, thereby setting uniform machining quantity.
JP3170181A 1981-03-05 1981-03-05 Bonding method for crystal wafer Pending JPS57147241A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3170181A JPS57147241A (en) 1981-03-05 1981-03-05 Bonding method for crystal wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3170181A JPS57147241A (en) 1981-03-05 1981-03-05 Bonding method for crystal wafer

Publications (1)

Publication Number Publication Date
JPS57147241A true JPS57147241A (en) 1982-09-11

Family

ID=12338369

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3170181A Pending JPS57147241A (en) 1981-03-05 1981-03-05 Bonding method for crystal wafer

Country Status (1)

Country Link
JP (1) JPS57147241A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5860541A (en) * 1981-10-07 1983-04-11 Toshiba Ceramics Co Ltd Processing method for wafer
JPH02123726A (en) * 1988-11-02 1990-05-11 Mitsubishi Electric Corp Wafer sticking apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5860541A (en) * 1981-10-07 1983-04-11 Toshiba Ceramics Co Ltd Processing method for wafer
JPH0332212B2 (en) * 1981-10-07 1991-05-10 Toshiba Ceramics Co
JPH02123726A (en) * 1988-11-02 1990-05-11 Mitsubishi Electric Corp Wafer sticking apparatus

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