JPH03296262A - 半導体メモリセル - Google Patents
半導体メモリセルInfo
- Publication number
- JPH03296262A JPH03296262A JP2098951A JP9895190A JPH03296262A JP H03296262 A JPH03296262 A JP H03296262A JP 2098951 A JP2098951 A JP 2098951A JP 9895190 A JP9895190 A JP 9895190A JP H03296262 A JPH03296262 A JP H03296262A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- interlayer insulating
- capacitor electrode
- film
- ferroelectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 239000003990 capacitor Substances 0.000 claims abstract description 57
- 239000011229 interlayer Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims description 10
- 230000005669 field effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 37
- 238000000034 method Methods 0.000 abstract description 5
- 238000005530 etching Methods 0.000 abstract description 3
- 230000010287 polarization Effects 0.000 description 16
- 230000002269 spontaneous effect Effects 0.000 description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 9
- 238000000206 photolithography Methods 0.000 description 8
- 229910052721 tungsten Inorganic materials 0.000 description 7
- 238000000059 patterning Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910020968 MoSi2 Inorganic materials 0.000 description 1
- 229910008479 TiSi2 Inorganic materials 0.000 description 1
- 229910008814 WSi2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- DFJQEGUNXWZVAH-UHFFFAOYSA-N bis($l^{2}-silanylidene)titanium Chemical compound [Si]=[Ti]=[Si] DFJQEGUNXWZVAH-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- -1 polycide Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2098951A JPH03296262A (ja) | 1990-04-13 | 1990-04-13 | 半導体メモリセル |
| KR1019910001961A KR950006471B1 (ko) | 1990-04-13 | 1991-02-05 | 반도체 메모리셀 |
| DE4107165A DE4107165A1 (de) | 1990-04-13 | 1991-03-06 | Halbleiterspeicherzelle |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2098951A JPH03296262A (ja) | 1990-04-13 | 1990-04-13 | 半導体メモリセル |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03296262A true JPH03296262A (ja) | 1991-12-26 |
Family
ID=14233406
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2098951A Pending JPH03296262A (ja) | 1990-04-13 | 1990-04-13 | 半導体メモリセル |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH03296262A (de) |
| KR (1) | KR950006471B1 (de) |
| DE (1) | DE4107165A1 (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5638319A (en) * | 1995-06-05 | 1997-06-10 | Sharp Kabushiki Kaisha | Non-volatile random access memory and fabrication method thereof |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1992006498A1 (en) * | 1990-09-28 | 1992-04-16 | Seiko Epson Corporation | Semiconductor device |
| JP2715736B2 (ja) * | 1991-06-28 | 1998-02-18 | 日本電気株式会社 | 半導体装置の製造方法 |
| US5401680A (en) * | 1992-02-18 | 1995-03-28 | National Semiconductor Corporation | Method for forming a ceramic oxide capacitor having barrier layers |
| JP3319869B2 (ja) * | 1993-06-24 | 2002-09-03 | 三菱電機株式会社 | 半導体記憶装置およびその製造方法 |
| US5439840A (en) * | 1993-08-02 | 1995-08-08 | Motorola, Inc. | Method of forming a nonvolatile random access memory capacitor cell having a metal-oxide dielectric |
| EP0740348B1 (de) * | 1995-04-24 | 2002-02-27 | Infineon Technologies AG | Halbleiter-Speichervorrichtung unter Verwendung eines ferroelektrischen Dielektrikums und Verfahren zur Herstellung |
| EP0740347B1 (de) * | 1995-04-24 | 2002-08-28 | Infineon Technologies AG | Halbleiter-Speichervorrichtung unter Verwendung eines ferroelektrischen Dielektrikums und Verfahren zur Herstellung |
| US5985731A (en) * | 1998-08-17 | 1999-11-16 | Motorola, Inc. | Method for forming a semiconductor device having a capacitor structure |
| US9092582B2 (en) | 2010-07-09 | 2015-07-28 | Cypress Semiconductor Corporation | Low power, low pin count interface for an RFID transponder |
| US9846664B2 (en) | 2010-07-09 | 2017-12-19 | Cypress Semiconductor Corporation | RFID interface and interrupt |
| US8723654B2 (en) | 2010-07-09 | 2014-05-13 | Cypress Semiconductor Corporation | Interrupt generation and acknowledgment for RFID |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01278063A (ja) * | 1988-04-22 | 1989-11-08 | Ramtron Corp | メモリセルおよびその動作方法 |
| JPH01308069A (ja) * | 1988-06-07 | 1989-12-12 | Fujitsu Ltd | 半導体メモリのメモリセル構造 |
| JPH03256358A (ja) * | 1990-03-06 | 1991-11-15 | Hitachi Ltd | 半導体記憶装置およびその製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0294471A (ja) * | 1988-09-30 | 1990-04-05 | Toshiba Corp | 半導体記憶装置およびその製造方法 |
-
1990
- 1990-04-13 JP JP2098951A patent/JPH03296262A/ja active Pending
-
1991
- 1991-02-05 KR KR1019910001961A patent/KR950006471B1/ko not_active IP Right Cessation
- 1991-03-06 DE DE4107165A patent/DE4107165A1/de active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01278063A (ja) * | 1988-04-22 | 1989-11-08 | Ramtron Corp | メモリセルおよびその動作方法 |
| JPH01308069A (ja) * | 1988-06-07 | 1989-12-12 | Fujitsu Ltd | 半導体メモリのメモリセル構造 |
| JPH03256358A (ja) * | 1990-03-06 | 1991-11-15 | Hitachi Ltd | 半導体記憶装置およびその製造方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5638319A (en) * | 1995-06-05 | 1997-06-10 | Sharp Kabushiki Kaisha | Non-volatile random access memory and fabrication method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| DE4107165A1 (de) | 1991-10-17 |
| DE4107165C2 (de) | 1993-08-12 |
| KR950006471B1 (ko) | 1995-06-15 |
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