JPH03185741A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

Info

Publication number
JPH03185741A
JPH03185741A JP1324753A JP32475389A JPH03185741A JP H03185741 A JPH03185741 A JP H03185741A JP 1324753 A JP1324753 A JP 1324753A JP 32475389 A JP32475389 A JP 32475389A JP H03185741 A JPH03185741 A JP H03185741A
Authority
JP
Japan
Prior art keywords
silicon oxide
bed
semiconductor device
insulating substrate
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1324753A
Other languages
English (en)
Other versions
JPH0724270B2 (ja
Inventor
Satoru Yanagida
悟 柳田
Koji Araki
浩二 荒木
Teru Okunoyama
奥野山　輝
Tetsunaga Niimi
哲永 新美
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Kyocera Chemical Corp
Original Assignee
Toshiba Corp
Toshiba Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Chemical Corp filed Critical Toshiba Corp
Priority to JP1324753A priority Critical patent/JPH0724270B2/ja
Priority to KR1019900020476A priority patent/KR940010536B1/ko
Priority to US07/627,573 priority patent/US5113241A/en
Priority to DE69030171T priority patent/DE69030171T2/de
Priority to EP90124195A priority patent/EP0437746B1/en
Publication of JPH03185741A publication Critical patent/JPH03185741A/ja
Publication of JPH0724270B2 publication Critical patent/JPH0724270B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
    • H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49517—Additional leads
    • H01L23/49531—Additional leads the additional leads being a wiring board
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29355—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00013—Fully indexed content
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Die Bonding (AREA)
  • Wire Bonding (AREA)
  • Inorganic Insulating Materials (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔発明の目的〕 （産業上の利用分野） 本発明は半導体装置に係わり、特にリードフレームのベ
ッド上に、半導体ペレットの他に絶縁基板が搭載されて
いるものに関する。
（従来の技術） 半導体装置において、以前はリードフレームのベッド上
に半導体ペレット１個のみが搭載されている場合が殆ど
であった。ところが最近の市場要求により、一つの半導
体装置の内部に複数個のペレットを搭載する場合が増え
てきた。
このような装置の構造を第２図に示す。リードフレーム
１のベッドｌａ上に、二つの半導体ペレット１１及び１
２が導電性接着剤により固定されている。このペレット
１１及び１２は、それぞれのパッドとインナリード１ｂ
との間に、ワイヤボンディングによ６ワイヤ１３で接続
されるが、この場合にはそれだけでなくペレット１１及
び１２同志を接続する必要が生じる。
しかし、ペレット１１と１２とを直接ワイヤボンディン
グしたのでは、ペレットのパッドに損傷を与える虞れが
ある上に、ベッド１ａ上における各々の配置も制約する
ことになる。そこでこの第２図に示されたように、配線
パターンが形成された絶縁基板２をベッド上に固定し、
この絶縁基板２をψ継するようにペレット１１及び１２
との間にワイヤボンディングを行ってワイヤ１４で接続
している。
ここで絶縁基板２をベッドｌａ上に固定する場合に、従
来は第２図のＡ−Ａ断面を示した第３図のように、絶縁
性接着剤２１を用いていた。ここでＡ部の部分拡大図を
第４図に示す。絶縁性接着剤２１は、充填剤としての酸
化ケイＩＡ　（Ｓ　ｉＯ２）を約２０％含むエポキシ樹
脂５で主に構成されており、他に添加剤が含まれている
。そしてこの充填剤の含有率は、酸化ケイ素のエポキシ
樹脂への溶解度の関係から最大で４０％とされており、
−般には２０％〜４０％のものが用いられていた。
（発明が解決しようとする課ｗＢ） しかし、充填率が２０％〜４０％と低いと、−膜内な銀
（Ａｇ）ペーストと比較して硬化後の硬度が不足すると
いう問題があった。
またエポキシ樹脂５は熱による影響を受は易く、高温に
なると硬度が低下するという特性を有している。このた
め、ワイヤボンディングは本来的２７０℃という高温で
行う必要があるが、このような絶縁性接着剤２１を用い
た場合には１５０℃以下で行わざるを得す、ワイヤ１４
と絶縁基板２との間に十分な接合強度が得られないとい
う問題があった。
さらに充填率が約６０％未満の接着剤は、便化していく
過程で絶縁基板２の表面に回り込むブリード現象が起き
やすいことが確認されている。ブリード現象が起きると
、接着剤２１が絶縁基板２上のパッドに付着する場合が
あり、やはりワイヤボンディング性を著しく悪化させる
ことになる。
このように従来は、充填剤の低い絶縁性接着剤を溶解度
の制約から用いていたが、接着剤の硬度不足や、ワイヤ
ボンディング性の低下といった問題があり、高い信頼性
が得られなかった。
本発明は上記事情に鑑みてなされたもので、硬化後にお
いて高温でも十分な硬度が得られ、ワイヤボンディング
性にも優れ信頼性の高い半導体装置を提供することを目
的とする。
〔発明のｍ戊〕
（課題を解決するための手段） 本発明の半導体装置は、リードフレームのベッド上に半
導体ペレットと絶縁基板とがそれぞれ搭載された装置で
あって、絶縁基板は絶縁性接着剤によってベッド上に固
着されており、この絶縁性接着剤は、酸化ケイ素以外に
、表面に酸化膜の付いた金属を含んでいることを特徴と
している。
このような装置は、絶縁基板をベッド上へ絶縁性接着剤
を用いて固着する際に、酸化ケイ素以外に、表面に酸化
膜の付いた金属を含んだ絶縁性接着剤を用いることで製
造することができる。
ここで金属として、ニッケル−クロム鋼を用いることが
できる。また金属の粒子は、酸化ケイ素よりも小さい方
が好ましい。
（作　用） 絶縁性接着剤に、酸化ケイ素の他に金属が含まれている
ことにより、充填剤の含有率が高くなり硬化後の硬度が
向上する。酸化ケイ素のみを充填剤として含む場合には
、充填率を上げ過ぎると溶鮮度が低下するため、４０％
以下に押さえなければならず硬度不足を招くが、金属を
さらに含ませることによって溶解度を低下させることな
く硬度を向上させることができる。
また、接着剤の樹脂成分としてエポキシ樹脂を用いた場
合に、充填率が低いと高温で硬度が低下するため、ワイ
ヤボンディングを最適な温度よりも低い温度で行わざる
を得ず、ワイヤボンディング性が低下するが、充填率を
上げることで向上させることができる。
さらに、充填率が低いと硬化していく過程でブリード現
象が起き易くなり、絶縁基板のパッドに接着剤が付着し
ワイヤボンディング性が悪化するが、金属をさらに含ま
せて充填率を高めることで、このような現象の発生を防
止することができる。
また金属の表面には酸化膜が形成されているため絶縁性
は維持され、リークの虞れはない。
金属としてニッケル−クロム鋼を用いることが可能であ
り、このような金属は、酸化ケイ素よりも比重が大きい
ので、攪拌することで容易に充填率が向上する。
さらに金属の粒子が酸化ケイ素よりも小さい場合には、
酸化ケイ素の粒子の間に入り込むため充填率をより高め
ることができる。
（実施例） 以下、本発明の一実施例による製造方法及びこれによっ
て得られる半導体装置について、図面を参照し説明する
。第１図は、リードフレームのベッドｌａ上に、絶縁性
接着剤３を用いて絶縁基板２を固着した状態を示した縦
断面図である。ここで絶縁性接着剤３の充填剤として、
酸化ケイ素４の他にニッケル−クロム（Ｎ　ｉ　−Ｃｒ
）鋼６を用いており、この充填剤のまわりをエポキシ樹
脂５が取り囲む構成となっている。そして酸化ケイ素４
の粒子の大きさは平均１０μｍであり、ニッケル−クロ
ム鋼６はそれよりも小さい平均２μｍであるため、酸化
ケイ素の粒子の間に入りこんだ状態となっている。また
ニッケル−クロム鋼６は、酸化ケイ素４よりも比重が大
きいので、攪拌することで比較的容易に充填率を向上さ
せることが可能である。
このような絶縁接着剤３を用いて製造した半導体装置に
よれば、ニッケル−クロム鋼６をさらに加えたことで充
填率が高まっているため、硬化後の硬度が向上し、特に
高温でも硬度が低下せず最適な温度でワイヤボンディン
グを行うことができる。このため、ワイヤボンディング
性が向上し、ワイヤとパッドとの間の接合力が高まる。
またブリード現象の発生が防止されるため、やはりワイ
ヤボンディング性が向上する。
そしてこのような本実施例による半導体装置を、従来の
装置と比較した結果について説明する。充填剤として、
従来の装置では酸化ケイ素のみを３０％含ませ、第１の
実施例として酸化ケイ素の他に粒子が球の形状をしたニ
ッケル−クロム鋼を含ませて全体として充填率を６０％
とし、さらに第２の実施例としてフレーク状のニッケル
−クロム鋼を含ませて充填率を７２％とした。そしてワ
イヤボンディングは、いずれも直径２５μｍのワイヤを
使用し、従来の装置では１５０℃、第１及び第２の実施
例では２５０℃でそれぞれ行った。
このようにして得られた各々の装置について、以下のよ
うな試験を行った。
（１）常温及び高温（２５０℃）における接着剤の硬度
を、ショアーＤ試験器を用いて測定した。
（２）ワイヤボンディング（各１６００本）を行った後
に、半導体ペレット側のパッドにおいて、ワイヤが付い
ていないものの数を調べた。
（３）半導体ペレット側におけるワイヤのボールに剪断
力を加え、剥離するに至ったときの強度を測定し、平均
剥離強度を求めた。
（４）絶縁基板側のパッドにおいて、ワイヤが付いてい
ないものの数を調べた。
（５）ワイヤに引張力を加えて、絶縁基板側におけるワ
イヤの接合強度を測定し、平均引張強度を求めた。
（６）接着剤が硬化していく最中に、ブリード現象が発
生したか否かを検査した。
以上の試験によって得られた結果を、以下の表に示す。
部 １ 表 以上の試験結果から明らかなように、本実施例による半
導体装置は充填剤の含有率が高いため、特に高温での硬
度が大幅に向上している。第２の実施例はフレーク状の
ニッケル−クロム鋼を含んでいるため、球状のニッケル
−クロム鋼を含んだ第１の実施例よりも酸化ケイ索の粒
子間に入り込み易く、充填率が向上して硬度もより向上
している。
また高温での硬度が大きく向上しているため、第１及び
第２の実施例では２５０℃というワイヤボンディングに
適した温度で行うことができ、この結果全てのパッドに
ワイヤが確実に接合された。
さらに接合力も向上し、平均剥離強度及び平均引張強度
は共に従来の約１．８倍の強度が得られた。
さらにブリード現象の発生も、防止することができ、こ
のこともワイヤボンディング性の向上に寄与している。
上述の実施例はいずれも一例であって、本発明を限定す
るものではない。実施例ではいずれもニッケル−クロム
鋼を充填させているが、酸化膜が表面に形成され絶縁性
を維持することのできる金属であれば他のものであって
もよい。例えばクロム（Ｃｒ）、マンガン（Ｍｎ）、モ
リブデン（Ｍｏ　）　、スズ（Ｓ　ｎ）等を用いること
ができる。
また樹脂成分はエポキシ樹脂が代表的なものではあるが
、他のものを用いてもよい。
〔発明の効果〕
以上説明したように本発明の半導体装置は、酸化ケイ素
の他に金篇を充填させた絶縁性接着剤を用いて絶縁基板
をリードフレームのベッド上に固着するという方法で製
造するため、溶解度を低下させることなく充填剤の含Ｈ
率を高めることができ、これにより硬化後における高温
での硬度が大幅に向上する。従って最適な温度でワイヤ
ボンディングを行うことができ、さらにブリードｒＪ１
．象の発生も防ＩＬされるためワイヤボンディング性が
向上し、信頼性の高い装置を得ることが可能となる。
【図面の簡単な説明】
第１図は本発明の一大施例による半導体装置における接
着剤の組成を示した縦断面図、第２図は本発明を適用す
ることが可能な半導体装置の外観を示した斜視図、第３
図は同装置の外観を示した縦断面図、第４図は従来の半
導体装置における接着剤の組成を示した縦断面図である
。 １・・・リードフレーム、１ａ・・・ベッド、１ｂ・・
・インナリード、２・・・絶縁基板、３・・・接着剤、
４・・・酸化ケイ素、５・・・エポキシ樹脂、１１．１
２・・・半導体ペレット、１３．１４・・・ワイヤ。

Claims (1)

  1. 【特許請求の範囲】 １、リードフレームのベッド上に、半導体ペレットと絶
    縁基板とがそれぞれ搭載された半導体装置において、 前期絶縁基板は絶縁性接着剤によつて前期ベッド上に固
    着されており、 さらに前期絶縁性接着剤は、酸化ケイ素以外に、表面に
    酸化膜の付いた金属を含んでいることを特徴とする半導
    体装置。 ２、前期金属は、ニッケル−クロム鋼であることを特徴
    とする請求項１記載の半導体装置。 ３、前期金属は、前期酸化ケイ素よりも粒子が小さいこ
    とを特徴とする請求項１記載の半導体装置。 ４、リードフレームのベッド上に、半導体ペレットと絶
    縁基板とがそれぞれ搭載された半導体装置を製造する方
    法において、 前期絶縁基板を前期ベッド上へ絶縁性接着剤を用いて固
    着する際に、酸化ケイ素以外に、表面に酸化膜の付いた
    金属を含んだ絶縁性接着剤を用いることを特徴とする半
    導体装置の製造方法。 ５、前期金属は、ニッケル−クロム鋼であることを特徴
    とする請求項４記載の半導体装置の製造方法。 ６、前期金属は、前期酸化ケイ素よりも粒子が小さいこ
    とを特徴とする請求項４記載の半導体装置の製造方法。
JP1324753A 1989-12-14 1989-12-14 半導体装置及びその製造方法 Expired - Fee Related JPH0724270B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP1324753A JPH0724270B2 (ja) 1989-12-14 1989-12-14 半導体装置及びその製造方法
KR1019900020476A KR940010536B1 (ko) 1989-12-14 1990-12-13 반도체장치 및 그 제조방법
US07/627,573 US5113241A (en) 1989-12-14 1990-12-14 Semiconductor device mounted upon an insulating adhesive with silicon dioxide and nickel chromium steel filling particles
DE69030171T DE69030171T2 (de) 1989-12-14 1990-12-14 Eine Halbleiteranordnung mit mehreren Chips befestigt auf einem Leitergitter und Verfahren
EP90124195A EP0437746B1 (en) 1989-12-14 1990-12-14 A semiconductor device comprising a plurality of pellets fixed on a lead frame and method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1324753A JPH0724270B2 (ja) 1989-12-14 1989-12-14 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPH03185741A true JPH03185741A (ja) 1991-08-13
JPH0724270B2 JPH0724270B2 (ja) 1995-03-15

Family

ID=18169298

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1324753A Expired - Fee Related JPH0724270B2 (ja) 1989-12-14 1989-12-14 半導体装置及びその製造方法

Country Status (5)

Country Link
US (1) US5113241A (ja)
EP (1) EP0437746B1 (ja)
JP (1) JPH0724270B2 (ja)
KR (1) KR940010536B1 (ja)
DE (1) DE69030171T2 (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5371404A (en) * 1993-02-04 1994-12-06 Motorola, Inc. Thermally conductive integrated circuit package with radio frequency shielding
JP3445641B2 (ja) * 1993-07-30 2003-09-08 株式会社デンソー 半導体装置
JPH0774290A (ja) * 1993-09-03 1995-03-17 Rohm Co Ltd 電子部品のパッケージング用材料
KR100218996B1 (ko) * 1995-03-24 1999-09-01 모기 쥰이찌 반도체장치
US5644168A (en) * 1995-05-03 1997-07-01 Texas Instruments Incorporated Mechanical interlocking of fillers and epoxy/resin
US5682066A (en) * 1996-08-12 1997-10-28 Motorola, Inc. Microelectronic assembly including a transparent encapsulant
US5891753A (en) 1997-01-24 1999-04-06 Micron Technology, Inc. Method and apparatus for packaging flip chip bare die on printed circuit boards
JP2990113B2 (ja) * 1997-06-26 1999-12-13 山形日本電気株式会社 半導体基板の不良解析装置及び不良解析方法
DE19756887A1 (de) * 1997-12-19 1999-07-01 Siemens Ag Kunststoffverbundkörper
US6157085A (en) * 1998-04-07 2000-12-05 Citizen Watch Co., Ltd. Semiconductor device for preventing exfoliation from occurring between a semiconductor chip and a resin substrate

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5780838U (ja) * 1980-11-05 1982-05-19
JPS5834932A (ja) * 1981-08-26 1983-03-01 Toshiba Corp 半導体装置
JPS5942703A (ja) * 1982-09-02 1984-03-09 ティーディーケイ株式会社 絶縁性良熱伝導体及びその製造方法
JPS63159422A (ja) * 1986-12-23 1988-07-02 Sumitomo Bakelite Co Ltd 半導体用絶縁樹脂ペ−スト

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3753056A (en) * 1971-03-22 1973-08-14 Texas Instruments Inc Microwave semiconductor device
FR2480488A1 (fr) * 1980-04-15 1981-10-16 Eaton Manford Liant thermiquement conducteur et isolant electriquement pour composants electriques et electroniques, et son procede de fabrication
JPS57111034A (en) * 1980-12-10 1982-07-10 Hitachi Ltd Semiconductor device and its manufacture
NL8202470A (nl) * 1982-06-18 1984-01-16 Philips Nv Hoogfrequentschakelinrichting en halfgeleiderinrichting voor toepassing in een dergelijke inrichting.
CA1238119A (en) * 1985-04-18 1988-06-14 Douglas W. Phelps, Jr. Packaged semiconductor chip
JPS61296749A (ja) * 1985-06-25 1986-12-27 Toray Silicone Co Ltd 半導体装置用リードフレームの製造方法
US4907068A (en) * 1987-01-21 1990-03-06 Siemens Aktiengesellschaft Semiconductor arrangement having at least one semiconductor body
CA1290676C (en) * 1987-03-30 1991-10-15 William Frank Graham Method for bonding integrated circuit chips
DE3817400A1 (de) * 1988-05-21 1989-11-30 Bosch Gmbh Robert Waermeleitender, elektrisch isolierender kleber
JPH02184054A (ja) * 1989-01-11 1990-07-18 Toshiba Corp ハイブリッド型樹脂封止半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5780838U (ja) * 1980-11-05 1982-05-19
JPS5834932A (ja) * 1981-08-26 1983-03-01 Toshiba Corp 半導体装置
JPS5942703A (ja) * 1982-09-02 1984-03-09 ティーディーケイ株式会社 絶縁性良熱伝導体及びその製造方法
JPS63159422A (ja) * 1986-12-23 1988-07-02 Sumitomo Bakelite Co Ltd 半導体用絶縁樹脂ペ−スト

Also Published As

Publication number Publication date
EP0437746A2 (en) 1991-07-24
US5113241A (en) 1992-05-12
EP0437746B1 (en) 1997-03-12
JPH0724270B2 (ja) 1995-03-15
KR940010536B1 (ko) 1994-10-24
DE69030171D1 (de) 1997-04-17
DE69030171T2 (de) 1997-07-31
KR910013498A (ko) 1991-08-08
EP0437746A3 (en) 1991-09-11

Similar Documents

Publication Publication Date Title
JP5762081B2 (ja) リードフレーム及び半導体装置
US4363076A (en) Integrated circuit package
US6133068A (en) Increasing the gap between a lead frame and a semiconductor die
JP4890872B2 (ja) 光半導体封止用透明エポキシ樹脂組成物及びそれを用いた光半導体集積回路装置
JP2001230360A (ja) 半導体集積回路装置およびその製造方法
US7329944B2 (en) Leadframe for semiconductor device
JP3897596B2 (ja) 半導体装置と配線基板との実装体
JPH03185741A (ja) 半導体装置及びその製造方法
JP3169781B2 (ja) 半導体装置用のリードフレーム
JP2007504648A (ja) 絶縁ワイヤのワイヤボンディング及びワイヤボンディングに用いるキャピラリ
KR100535848B1 (ko) 수지 밀봉형 반도체 장치, 이것에 사용되는 다이본드재 및밀봉재
US8786084B2 (en) Semiconductor package and method of forming
TW200416915A (en) Wirebonding insulated wire
JPH0445985B2 (ja)
US8618677B2 (en) Wirebonded semiconductor package
JP2972679B2 (ja) リードフレーム並びに樹脂封止型半導体装置及びその製造方法
JP3003653B2 (ja) ボールグリッドアレイ型半導体装置
JP2001332662A (ja) 樹脂封止型半導体装置
JPH11254185A (ja) フレックス接合材
JP4376262B2 (ja) 半導体装置と配線基板との実装体の製造方法
JP2017079215A (ja) 樹脂封止型半導体装置、およびその製造方法、ならびにその実装体
JPH03206633A (ja) 半導体装置
JP4123719B2 (ja) テープキャリアおよびこれを用いた半導体装置
JPS60147146A (ja) 半導体用リ−ドフレ−ム
JP2001332661A (ja) 樹脂封止型半導体装置

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees