KR940010536B1 - 반도체장치 및 그 제조방법 - Google Patents

반도체장치 및 그 제조방법 Download PDF

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Publication number
KR940010536B1
KR940010536B1 KR1019900020476A KR900020476A KR940010536B1 KR 940010536 B1 KR940010536 B1 KR 940010536B1 KR 1019900020476 A KR1019900020476 A KR 1019900020476A KR 900020476 A KR900020476 A KR 900020476A KR 940010536 B1 KR940010536 B1 KR 940010536B1
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South Korea
Prior art keywords
semiconductor device
silicon oxide
insulating
bed
metal
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KR1019900020476A
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English (en)
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KR910013498A (ko
Inventor
사토루 야나기다
고우지 아라키
히카루 오쿠노야마
데츠노리 니이미
Original Assignee
가부시키가이샤 도시바
아오이 죠이치
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Publication of KR910013498A publication Critical patent/KR910013498A/ko
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Publication of KR940010536B1 publication Critical patent/KR940010536B1/ko

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Abstract

내용 없음.

Description

반도체장치 및 그 제조방법
제 1 도는 본 발명의 1실시예에 따른 반도체장치에 있어서 접착제의 조성을 나타낸 종단면도.
제 2 도는 본 발명을 적용시킬 수 있는 반도체장치의 외관을 나타낸 사시도.
제 3 도는 동 반도체장치의 외관을 나타낸 종단면도.
제 4 도는 종래의 반도체장치에 있어서 접착제의 조성을 나타낸 종단면도이다.
* 도면의 주요부분에 대한 부호의 설명
1 : 리이드 프레임 1a : 베드
1b : 인너 라이드 2 : 절연기판
3 : 접착제 4 : 산화규소
5 : 에폭시 수지 11, 12 : 반도체 펠렛
13, 14 : 와이어
[산업상의 이용분야]
본 발명은 반도체장치에 관한 것으로, 특히 리이드 프레임의 베드(Bed)상에 반도체 펠렛(半導體 Pellet)의 바깥쪽으로 절연기판이 탑재되어 있는 반도체장치 및 그 제조방법에 관한 것이다.
[종래 기술 및 그 문제점]
반도체장치에 있어서, 이전에는 리이드 프레임의 베드상에 반도체 펠렛 1개만이 탑재되는 경우가 대부분이었다. 그런데 최근에는 시장요구에 따라 1개의 반도체장치 내부에 복수개의 펠렛이 탑재되는 경우가 늘어나고 있다.
상기한 장치의 구조를 제 2 도에 나타냈는 바, 즉 리이드 프레임(1)의 베드(1a)상에 2개의 반도체 펠렛(11, 12)이 도전성 접착제에 의해 고정되어 있다. 이 반도체 펠렛(11 및 12)은 각각의 패드(Pad)와 인너 리이드(1b; Inner Lead)간에 와이어 본딩을 통하여 와이어(13)로 접속되는데, 이 경우에는 그뿐만 아니라 펠렛(11 및 12) 끼리를 접속시킬 필요가 생긴다.
그러나 펠렛(11, 12)을 직접 와이어 본딩하는 것은 펠렛의 패드에 손상을 줄 우려가 있으며 베드(1a)상에 있는 각각의 배선도 제약받게 된다. 이에 제 2 도에 나타낸 것처럼 배선패턴이 형성된 절연기판(2)을 베드(1a)상에 고정시키고 그 절연기판(2)을 중계하도록 펠렛(11, 12)간에 와이어 본딩을 행하여 와이어(14)로 접속시키고 있다.
여기에서 상기 절연기판(2)을 베드(1a)상에 고정시키는 경우에, 종래는 제도의 A-A선 단면을 나타낸 제 3 도와 같이 절연성 접착제(21)를 사용하고 있었다. 이 절연성 접착제(21)는 주로 충전제(充塡劑)로 기능하는 산화규소(SiO2)를 약 20% 포함하는 에폭시 수지(5)로 구성되어 있고 그 밖에 첨가제가 포함되어 있다(제 4 도 참조). 그리고 그 충전제의 함유율은 산화규소가 에폭시 수지로 용해되는 용해도의 관계 때문에 최대 40%로 되어 있는 바, 일반적으로 20%∼40%의 것이 이용되고 있다.
그러나 충전률(充塡率)이 20%∼40% 정도로 낮으면, 일반적인 은 페이스트(Ag Paste)와 비교하여 경화 후의 경도가 부족하다는 문제가 있었다.
또한, 에폭시 수지(5)는 열에 의한 영향을 받기 쉬워서 고온으로 되면 경도가 저하된다는 특성을 갖고 있다. 이 때문에 와이어 본딩은 본래 약 270℃의 고온에서 행할 필요가 있는데, 이러한 절연성 접착제(21)를 이용한 경우에는 150℃ 이하에서 실행하지 않으면 안되어, 와이어(14)와 절연기판(2)의 사이에 충분한 접합 강도를 얻을 수 없다는 문제가 있었다.
더욱이 충전률이 약 60% 미만인 접착제는 경화시켜 가는 과정에서 절연기판(2)의 표면으로 돌아 들어가는 블리드 현상이 일어나기 쉽다는 것이 확인되어 있다. 이러한 블리드 현상이 일어나면, 접착제(21)가 절연기판(2)상의 패드에 부착되는 경우가 있어서 와이어 본딩 특성을 현저히 악화시키게 된다.
상기한 것처럼 종래에는 충전제의 함유율이 낮은 절연성 접착제를 용해도의 제약을 받으며 이용하고 있었는데, 접착제의 경도부족(硬度不足)이나 와이어 본딩 특성의 저하라고 하는 문제가 있어서 높은 신뢰성을 얻을 수 없었다.
[발명의 목적]
본 발명은 상기한 사정을 감안하여 이루어진 것으로, 경화후에 있어서 고온이더라도 충분한 경도를 얻게 되고 와이어 본딩 특성도 우수하여 신뢰성이 높은 반도체장치를 제공하고자 함에 그 목적이 있다.
[발명의 구성]
본 발명의 반도체장치는 리이드 프레임의 베드상에 반도체 펠렛과 절연기판이 각각 탑재된 장치로서, 상기 절연기판은 절연성 접착제에 의해 베드상에 고착되어 있고, 이 절연성 접착제는 산화규소 이외에 표면에 산화막이 붙은 금속을 함유하고 있는 것을 특징으로 하는 것이다.
이러한 장치는 절연기판을 베드상으로 절연성 접착제를 이용하여 고착시킬 때 산화규소 이외에 표면에 산화막이 붙은 금속을 포함하는 절연성 접착제를 이용하여 제조할 수 있다.
여기에서 상기 금속으로서는 니켈-크롬강(鋼)을 이용할 수 있다. 또한, 금속의 입자는 산화규소보다도 작은 쪽이 바람직하다.
[작용]
상기와 같이 이루어진 본 발명은, 절연성 접착제에 산화규소 이외의 금속이 포함되어 있으므로 충전제이 함유율이 높아져서 경화후의 경도가 향상된다. 충전제로서 산화규소만을 포함하는 경우에 충전률을 높이면 용해도가 저하되기 때문에 40% 이하로 억압하지 않으면 아니되어 경도부족을 초래하게 되지만, 본 발명에서 금속을 더욱 포함시킴으로써 용해도를 저하시키지 않고 경도를 향상시킬 수 있다.
또한, 접착제의 수지성분으로서 에폭시 수지를 이용한 경우에 충전률이 낮으면 고온에서 경도가 저하되기 때문에 와이어 본딩을 최적온도보다도 낮은 온도로 실행하지 않으면 와이어 본딩 특성이 저하되지만, 본 발명에서 충전률을 높임으로써 그 특성을 향상시킬 수 있다.
더욱이, 충전률이 낮으면 경화시켜 가는 과정에서 블리드 현상이 일어나기 쉬워져서 절연기판의 패드에 접착제가 부착되므로 와이어 본딩 특성이 악화되지만, 본 발명에서는 금속을 더 포함시켜서 충전률을 높임으로써 그러한 현상이 발생하는 것을 방지할 수 있다.
또한, 금속의 표면에는 산화막이 형성되어 있기 때문에 절연성이 유지되어 리이크(Leak)의 우려는 없다.
본 발명에서는 니켈-크롬강을 이용할 수 있는데, 이러한 금속은 산화규소보다도 비중이 크므로, 뒤섞어서 용이하게 충전률을 향상시킬 수 있다.
더욱이, 금 속의 입자가 산화규소보다도 작은 경우에는 산화규소의 입자간에 끼워들어가기 때문에 충전률을 보다 높일 수 있다.
[실시예]
이하, 본 발명의 1실시예에 따른 제조방법 및 그로부터 얻을 수 있는 반도체장치에 대해 도면을 참조하여 상세히 설명한다.
제 1 도는 리이드 프레임의 베드(1a)상에 절연성 접착제(3)를 이용하도록 절연기판(2)을 고착시킨 상태를 나타낸 종단면도이다. 여기에서 절연성 접착제(3)의 충전제로서 산화규소(4) 이외에 니켈-크롬강(6; Ni-Cr 鋼)을 이용하고 있는 바, 이 충전제의 주위를 에폭시 수지(5)가 둘러싸는 구성으로 되어 있다. 그리고 산화규소(4)의 입자크기는 평균 10㎛이되 니켈-크롬강(6)은 그보다도 작은 평균 2㎛이기 때문에 산화규소(4)의 입자간에 끼워 들어간 상태로 되어 있다. 또한, 니켈-크롬강(6)은 산화규소(4)보다도 비중이 크기 때문에 뒤섞음으로써 비교적 용이하게 충전률을 향상시킬 수 있다.
이와 같은 절연성 접착제(3)를 이용하여 제조한 반도체장치에 의하면, 니켈-크롬강(6)을 더욱 덧붙임으로써 충전률이 높아지고 있기 때문에 경화후의 경도가 향상되고, 특히 고온에서도 경도가 저하되지 않아 최적 온도에서 와이어 본딩을 실행할 수 있다. 이 때문에 와이어 본딩 특성이 향상되어 와이어와 패드간의 접합력이 강해진다. 또한, 블리드 현상의 발생이 방지되기 때문에 역시 와이어 본딩 특성이 향상된다.
다음에는 상기 본 실시예에 의한 반도체장치를 종래의 장치와 비교한 결과에 대해 설명한다. 종래의 장치에서는 충전제로서 산화규소만을 30% 함유시키고, 제1실시예에서는 산화규소 이외에 입자가 구형상(球形狀)인 니켈-크롬강을 포함시켜서 전체적으로 충전률을 60%로 하며, 더욱이 제2실시예에서는 플레이크 형상의 니켈-크롬강을 포함시켜 충전률을 72%로 하였다. 그리고 와이어 본딩시 모두 25㎛의 와이어를 사용하되 종래의 장치에서는 150℃, 제1 및 제2실시예에서는 250℃에서 실행하였다.
이와같이 하여 얻은 각 장치에 대해 다음과 같은 시험을 하였다.
(1) 상온 및 고온(250℃)에 있어서의 접착제의 경도를 쇼어-D 시험기를 이용하여 측정하였다.
(2) 와이어 본딩(각 1600개)을 행한 후 반도체 펠렛측의 패드에 있어서 와이어가 붙어 있지 않은 것의 수효를 조사하였다.
(3) 반도체 펠렛측에 있어서의 와이어의 볼에 절단력을 가하여 박리되기에 이르기까지의 강도를 측정하여 평균 박리강도를 구하였다.
(4) 절연기판측의 패드에 있어서, 와이어가 붙어있지 않은 것의 수효를 조사하였다.
(5) 와이어에 인장력을 가하여 절연기판측에 있어서의 와이어의 접합강도를 측정하고 평균 인장강도를 구하였다.
(6) 접착제가 경화되어 가는 도중에 블리드 현상이 발생하였는가 아닌가를 검사하였다.
이상의 시험에 의해 얻어진 결과를 다음의 표에 나타냈다.
[표 1]
이상의 시험결과로부터 알 수 있듯이, 본 실시예에 의한 반도체장치는 충전제의 함유율이 높기 때문에 특히 고온에서의 경도가 대폭 향상되어 있다. 제2실시예는 플레이크 형상의 니켈-크롬강을 포함하고 있기 때문에 구형상의 니켈-크롬강을 포함한 제1실시예보다도 산화규소의 입자간에 끼어 들어가기 쉬우므로 충전률이 향상되고 경도 역시 보다 향상되어 있다.
또한, 고온에서의 경도가 크게 향상되어 있기 때문에, 제1 및 제2실시예에서는 250℃라고 하는 와이어 본딩에 적합한 온도에서 본딩을 실행할 수 있고, 그 결과 모든 와이어가 확실히 접합되었다. 더욱이 접합력도 향상되어, 평균 박리강도 및 평균 인장강도는 공히 종래의 약 1.8배로 되었다. 더욱이, 블리드 현상의 발생도 방지할 수 있는 바, 이 점도 와이어 본딩 특성의 향상에 기여하고 있다.
상술한 실시예는 모두 한가지의 예예 불과한 것으로서, 본 발명을 한정하는 것은 아니다. 상기 실시예는 모두 니켈-크롬강을 충전시키기 있지만, 산화막이 표면에 형성되어 절연성을 유지할 수 있는 금속이라면 다른 것이라도 좋다. 예컨대, 크롬(Cr), 망간(Mn), 모리브덴(Mo), 주석(Sn) 등을 이용할 수 있다. 또한, 수지성분은 에폭시 수지가 대표적이지만, 다른 것을 이용해도 된다.
한편, 본원 청구범위의 각 구성요소에 병기한 도면참조부호는 본원 발명의 이해를 용이하게 하기 위한 것으로, 본원 발명의 기술적 범위를 도면에 도시한 실시예로 한정할 의도로 병기한 것은 아니다.
[발명의 효과]
이상에서 설명한 것처럼, 본 발명의 반도체장치는 산화규소 이외에 금속을 충전시킨 절연성 접착제를 이용하여 절연기판을 리이드 프레임의 베드상에 고착시킨다는 방법으로 제조되기 때문에, 용해도를 저하시키는 일 없이 충전제의 함유율을 높일 수 있고, 이로써 경화후에 고온에서의 경도가 대폭 향상된다. 따라서 최적온도에서 와이어 본딩을 할 수 있고 더욱이 블리드 현상의 발생도 방지되기 때문에, 와이어 본딩 특성이 향상되어 신뢰성이 높은 장치를 얻을 수 있게 된다.

Claims (6)

  1. 리이드 프레임의 베드(1a)상에 반도체 펠렛(11, 12)과 절연기판(2)이 각각 탑재된 반도체장치에 있어서, 상기 절연기판은 절연성 접착제(3)에 의해 상기 베드상에 고착되어 있고, 더욱이 상기 절연성 접착제는 산화규소 이외에 표면에 산화막이 붙은 금속(6)을 함유하고 있는 것을 특징으로 하는 반도체장치.
  2. 제 1 항에 있어서, 상기 금속은 니켈-크롬강인 것을 특징으로 하는 반도체장치.
  3. 제 1 항에 있어서, 상기 금속은 상기 산화규소보다도 입자가 작은 것을 특징으로 하는 반도체장치.
  4. 리이드 프레임의 베드상에 반도체 펠렛과 절연기판이 각각 탑재된 반도체장치를 제조하는 방법에 있어서, 상기 절연기판을 상기 베드상에 절연성 접착제를 이용하여 고착시킬 때에 산화규소 이외에 표면에 산화막이 붙은 금속(6)을 함유한 절연성 접착제(3)을 이용하는 것을 특징으로 하는 반도체장치의 제조방법.
  5. 제 4 항에 있어서, 상기 금속은 니켈-크롬강인 것을 특징으로 하는 반도체장치의 제조방법.
  6. 제 4 항에 있어서, 상기 금속은 상기 산화소보다도 입자가 작은 것을 특징으로 하는 반도체장치의 제조방법.
KR1019900020476A 1989-12-14 1990-12-13 반도체장치 및 그 제조방법 KR940010536B1 (ko)

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JP1-324753 1989-12-14
JP1324753A JPH0724270B2 (ja) 1989-12-14 1989-12-14 半導体装置及びその製造方法

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EP0437746B1 (en) 1997-03-12
KR910013498A (ko) 1991-08-08
JPH03185741A (ja) 1991-08-13
JPH0724270B2 (ja) 1995-03-15
EP0437746A3 (en) 1991-09-11
EP0437746A2 (en) 1991-07-24
DE69030171T2 (de) 1997-07-31
US5113241A (en) 1992-05-12

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