JPH0249549B2 - - Google Patents
Info
- Publication number
- JPH0249549B2 JPH0249549B2 JP58249488A JP24948883A JPH0249549B2 JP H0249549 B2 JPH0249549 B2 JP H0249549B2 JP 58249488 A JP58249488 A JP 58249488A JP 24948883 A JP24948883 A JP 24948883A JP H0249549 B2 JPH0249549 B2 JP H0249549B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- wiring
- bonding pad
- metal layer
- intermediate metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011347 resin Substances 0.000 claims description 29
- 229920005989 resin Polymers 0.000 claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 230000003139 buffering effect Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 52
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 11
- 238000007747 plating Methods 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0271—Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5385—Assembly of a plurality of insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/09654—Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
- H05K2201/09781—Dummy conductors, i.e. not used for normal transport of current; Dummy electrodes of components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10431—Details of mounted components
- H05K2201/10439—Position of a single component
- H05K2201/10477—Inverted
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10742—Details of leads
- H05K2201/10886—Other details
- H05K2201/10946—Leads attached onto leadless component after manufacturing the component
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/20—Details of printed circuits not provided for in H05K2201/01 - H05K2201/10
- H05K2201/2009—Reinforced areas, e.g. for a specific part of a flexible printed circuit
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/01—Tools for processing; Objects used during processing
- H05K2203/0195—Tool for a process not provided for in H05K3/00, e.g. tool for handling objects using suction, for deforming objects, for applying local pressure
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/04—Soldering or other types of metallurgic bonding
- H05K2203/049—Wire bonding
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/328—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by welding
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/901—Printed circuit
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1089—Methods of surface bonding and/or assembly therefor of discrete laminae to single face of additional lamina
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
- Y10T428/12826—Group VIB metal-base component
- Y10T428/12847—Cr-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12875—Platinum group metal-base component
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12882—Cu-base component alternative to Ag-, Au-, or Ni-base component
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Description
【発明の詳細な説明】
本発明は、ボンデイング時に基板に圧力のかか
る熱圧着ボンデイングに適した樹脂絶縁多層基板
に関する。
る熱圧着ボンデイングに適した樹脂絶縁多層基板
に関する。
従来、多層配線基板においては、層間の絶縁に
無機絶縁材(Al2O3)が主に使用されていたが、
最近、配線の微細高密度化及び信号線間の低容量
化の為に絶縁材として有機樹脂を使用する多層配
線基板が開発されている。しかし、この種の有機
樹脂を絶縁に使用した場合、硬度が無機絶縁材
(Al2O3)の約1500ビツカース硬度に対して70〜
150ビツカース硬度と非常に低く、高温高加重の
かかる熱圧着により金属配線をボンデイングする
に際して樹脂がへこむ等の変形が生じ、正常なボ
ンデイングができないばかりでなく、下層の配線
層にも影響を与え、配線不良の原因になるという
不具合があつた。そこで、ボンデイング用パツド
にNiメツキ層等の硬いメタル層を介在させるこ
とによつて、ボンデイングパツドを硬くする処置
が採られていた。この場合、Niメツキ層は厚く、
かつ硬いほどよいが、厚さはパターン精度の劣化
をもたらし、また、硬度はメツキ浴組成およびメ
ツキ条件により必然的に制約をうけるから、ボン
デイング時の樹脂の変形を完全に無くすることは
できなかつた。
無機絶縁材(Al2O3)が主に使用されていたが、
最近、配線の微細高密度化及び信号線間の低容量
化の為に絶縁材として有機樹脂を使用する多層配
線基板が開発されている。しかし、この種の有機
樹脂を絶縁に使用した場合、硬度が無機絶縁材
(Al2O3)の約1500ビツカース硬度に対して70〜
150ビツカース硬度と非常に低く、高温高加重の
かかる熱圧着により金属配線をボンデイングする
に際して樹脂がへこむ等の変形が生じ、正常なボ
ンデイングができないばかりでなく、下層の配線
層にも影響を与え、配線不良の原因になるという
不具合があつた。そこで、ボンデイング用パツド
にNiメツキ層等の硬いメタル層を介在させるこ
とによつて、ボンデイングパツドを硬くする処置
が採られていた。この場合、Niメツキ層は厚く、
かつ硬いほどよいが、厚さはパターン精度の劣化
をもたらし、また、硬度はメツキ浴組成およびメ
ツキ条件により必然的に制約をうけるから、ボン
デイング時の樹脂の変形を完全に無くすることは
できなかつた。
本発明の目的は、上記従来の問題点を解決し、
配線層に影響を与えずに配線用金属をボンデイン
グすることのできる樹脂絶縁多層基板を提供する
ことにある。
配線層に影響を与えずに配線用金属をボンデイン
グすることのできる樹脂絶縁多層基板を提供する
ことにある。
本発明によれば、樹脂絶縁層内に配線層が形成
され、層表面に配線用金属がボンデイングパツド
を介して接続される樹脂絶縁多層基板において、
ボンデイングパツドと配線層の間の樹脂絶縁層内
部に、ストレス緩衝用の中間メタル層を設けたこ
とを特徴とする樹脂絶縁多層基板が得られる。
され、層表面に配線用金属がボンデイングパツド
を介して接続される樹脂絶縁多層基板において、
ボンデイングパツドと配線層の間の樹脂絶縁層内
部に、ストレス緩衝用の中間メタル層を設けたこ
とを特徴とする樹脂絶縁多層基板が得られる。
なお上記の中間メタル層は樹脂絶縁層と密着性
を有するメタル層を含む多層の中間メタル層であ
つてもよい。
を有するメタル層を含む多層の中間メタル層であ
つてもよい。
次に、本発明による樹脂絶縁多層基板について
実施例を挙げ、図面を参照して詳細に説明する。
実施例を挙げ、図面を参照して詳細に説明する。
第1図は本発明による実施例の構造を示す断面
図である。この図において、セラミツク基板6上
に有機樹脂絶縁層5を層間絶縁として配線層7が
形成され、その上に、さらに有機樹脂絶縁層4が
形成されている。そして、有機樹脂絶縁層4の上
には中間メタル層3が形成される。このストレス
緩衝用の中間メタル層3には、有機樹脂絶縁層4
との密着強度を上げる為に、クロム(Cr)層8
が500〜1000Å、パラジウム(Pd)層9が1000〜
2000Å形成され、その上に銅(Cu)層10が約
20μm、ニツケル(Ni)層11が1〜3μm程度形
成されている。さらに、上記中間メタル層3の上
には、有機樹脂絶縁層2が20μm形成され、その
上にボンデイング用パツド1が形成されている。
このボンデイング用パツド1は、中間メタル層3
と同様のメタル構成とし、最上層に金(Au)メ
ツキ16が約3μm施されている。
図である。この図において、セラミツク基板6上
に有機樹脂絶縁層5を層間絶縁として配線層7が
形成され、その上に、さらに有機樹脂絶縁層4が
形成されている。そして、有機樹脂絶縁層4の上
には中間メタル層3が形成される。このストレス
緩衝用の中間メタル層3には、有機樹脂絶縁層4
との密着強度を上げる為に、クロム(Cr)層8
が500〜1000Å、パラジウム(Pd)層9が1000〜
2000Å形成され、その上に銅(Cu)層10が約
20μm、ニツケル(Ni)層11が1〜3μm程度形
成されている。さらに、上記中間メタル層3の上
には、有機樹脂絶縁層2が20μm形成され、その
上にボンデイング用パツド1が形成されている。
このボンデイング用パツド1は、中間メタル層3
と同様のメタル構成とし、最上層に金(Au)メ
ツキ16が約3μm施されている。
このように構成された基板によれば、金の細線
17をボンデイング用パツド1に熱圧着しても、
ボンデイング用パツド1内に銅(Cu)層14、
ニツケル(Ni)層15が介在する為、有機樹脂
絶縁層2への影響が小さくなつて有機樹脂絶縁層
2生ずる凹みを2〜5μm程度に押えることがで
きる。また、ボンデイング用パツド1と配線層7
との間に中間メタル層3が介在する為、有機樹脂
絶縁層2に生ずる凹みが配線層7に影響を与える
ことはない。このように中間メタル層3はボンデ
イングパツドを熱圧着したときに生じるストレス
の有効な緩衝材となる。なお、有機樹脂絶縁層と
中間メタル層との密着度を高める為にクロム
(Cr)を使用したが、チタン(Ti)を使用しても
よいことは言うまでもない。
17をボンデイング用パツド1に熱圧着しても、
ボンデイング用パツド1内に銅(Cu)層14、
ニツケル(Ni)層15が介在する為、有機樹脂
絶縁層2への影響が小さくなつて有機樹脂絶縁層
2生ずる凹みを2〜5μm程度に押えることがで
きる。また、ボンデイング用パツド1と配線層7
との間に中間メタル層3が介在する為、有機樹脂
絶縁層2に生ずる凹みが配線層7に影響を与える
ことはない。このように中間メタル層3はボンデ
イングパツドを熱圧着したときに生じるストレス
の有効な緩衝材となる。なお、有機樹脂絶縁層と
中間メタル層との密着度を高める為にクロム
(Cr)を使用したが、チタン(Ti)を使用しても
よいことは言うまでもない。
以上の説明により明らかなように、本発明によ
れば、ボンデイング用パツドと配線層との間に
Ni、Cu等の中間メタル層を設けることにより、
良好なボンデイングを行なうことができ、信頼性
の向上に対して得られる効果は大きい。
れば、ボンデイング用パツドと配線層との間に
Ni、Cu等の中間メタル層を設けることにより、
良好なボンデイングを行なうことができ、信頼性
の向上に対して得られる効果は大きい。
第1図は本発明による実施例の構造を示す断面
図である。この図において、1はボンデイング用
パツド、2,4,5は有機樹脂絶縁層、3は中間
メタル層、6はセラミツク基板、7は配線層、
8,12はクロム層、9,13はパラジウム層、
10,14は銅層、11,15はニツケル層、1
6は金メツキ、17は金の細線である。
図である。この図において、1はボンデイング用
パツド、2,4,5は有機樹脂絶縁層、3は中間
メタル層、6はセラミツク基板、7は配線層、
8,12はクロム層、9,13はパラジウム層、
10,14は銅層、11,15はニツケル層、1
6は金メツキ、17は金の細線である。
Claims (1)
- 【特許請求の範囲】 1 樹脂絶縁層内に配線層が形成され、層表面に
配線用金属がボンデイング用パツドを介して接続
される樹脂絶縁多層基板において、前記ボンデイ
ング用パツドと前記配線層の間の樹脂絶縁層内部
に、ストレス緩衝用の中間メタル層を設けたこと
を特徴とする樹脂絶縁多層基板。 2 前記中間メタル層が前記樹脂絶縁層と密着性
を有するメタル層を含む多層の中間メタル層であ
ることを特徴とする特許請求の範囲第1項記載の
樹脂絶縁多層基板。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58249488A JPS60140897A (ja) | 1983-12-28 | 1983-12-28 | 樹脂絶縁多層基板 |
US06/678,828 US4578304A (en) | 1983-12-28 | 1984-12-06 | Multilayer wiring substrate |
FR848420034A FR2557755B1 (fr) | 1983-12-28 | 1984-12-28 | Substrat de cablage multi-couche |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58249488A JPS60140897A (ja) | 1983-12-28 | 1983-12-28 | 樹脂絶縁多層基板 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60140897A JPS60140897A (ja) | 1985-07-25 |
JPH0249549B2 true JPH0249549B2 (ja) | 1990-10-30 |
Family
ID=17193713
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58249488A Granted JPS60140897A (ja) | 1983-12-28 | 1983-12-28 | 樹脂絶縁多層基板 |
Country Status (3)
Country | Link |
---|---|
US (1) | US4578304A (ja) |
JP (1) | JPS60140897A (ja) |
FR (1) | FR2557755B1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0570552U (ja) * | 1991-03-28 | 1993-09-24 | 株式会社クラレ | 生体医学用電極 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4727044A (en) * | 1984-05-18 | 1988-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Method of making a thin film transistor with laser recrystallized source and drain |
JPS61176142A (ja) * | 1985-01-31 | 1986-08-07 | Toshiba Corp | 基板構造体 |
US4731699A (en) * | 1985-10-08 | 1988-03-15 | Nec Corporation | Mounting structure for a chip |
JPS62108593A (ja) * | 1985-11-06 | 1987-05-19 | 日本電気株式会社 | 多層配線基板 |
JPS6318697A (ja) * | 1986-07-11 | 1988-01-26 | 日本電気株式会社 | 多層配線基板 |
US5165166A (en) * | 1987-09-29 | 1992-11-24 | Microelectronics And Computer Technology Corporation | Method of making a customizable circuitry |
AU610249B2 (en) * | 1987-09-29 | 1991-05-16 | Microelectronics And Computer Technology Corporation | Customizable circuitry |
JPH085580Y2 (ja) * | 1990-02-09 | 1996-02-14 | 沖電気工業株式会社 | 樹脂多層プリント配線板 |
DE4309307A1 (de) * | 1993-03-23 | 1994-09-29 | Siemens Nixdorf Inf Syst | Verfahren zur Montage eines dünnen Halbleiterquaders auf einem folienartigen Substrat |
JP3110922B2 (ja) * | 1993-08-12 | 2000-11-20 | 富士通株式会社 | マルチチップ・モジュール |
JP4206320B2 (ja) | 2003-09-19 | 2009-01-07 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
JP4798237B2 (ja) * | 2009-03-09 | 2011-10-19 | 株式会社デンソー | Ic搭載基板、及び多層プリント配線板 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3381256A (en) * | 1966-02-04 | 1968-04-30 | Monsanto Co | Resistor and contact means on a base |
US4016050A (en) * | 1975-05-12 | 1977-04-05 | Bell Telephone Laboratories, Incorporated | Conduction system for thin film and hybrid integrated circuits |
DE2554691C2 (de) * | 1974-12-10 | 1982-11-18 | Western Electric Co., Inc., 10038 New York, N.Y. | Verfahren zum Herstellen elektrischer Leiter auf einem isolierenden Substrat und danach hergestellte Dünnschichtschaltung |
DE2716545A1 (de) * | 1977-04-14 | 1978-10-19 | Siemens Ag | Gedruckte schaltungsplatte mit mindestens zwei verdrahtungslagen |
US4190474A (en) * | 1977-12-22 | 1980-02-26 | Gould Inc. | Method of making a printed circuit board having mutually etchable copper and nickel layers |
US4260449A (en) * | 1977-12-22 | 1981-04-07 | Gould Inc. | Method of forming a printed circuit |
US4311768A (en) * | 1977-12-22 | 1982-01-19 | Gould Inc. | Printed circuit board having mutually etchable copper and nickel layers |
FR2466103A1 (fr) * | 1979-09-18 | 1981-03-27 | Lerouzic Jean | Procede de realisation d'un reseau d'interconnexion de composants electroniques a conducteurs en aluminium et isolant en alumine et reseau d'interconnexion obtenu par ce procede |
-
1983
- 1983-12-28 JP JP58249488A patent/JPS60140897A/ja active Granted
-
1984
- 1984-12-06 US US06/678,828 patent/US4578304A/en not_active Expired - Lifetime
- 1984-12-28 FR FR848420034A patent/FR2557755B1/fr not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0570552U (ja) * | 1991-03-28 | 1993-09-24 | 株式会社クラレ | 生体医学用電極 |
Also Published As
Publication number | Publication date |
---|---|
FR2557755A1 (fr) | 1985-07-05 |
JPS60140897A (ja) | 1985-07-25 |
US4578304A (en) | 1986-03-25 |
FR2557755B1 (fr) | 1994-07-29 |
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