JPS6331102B2 - - Google Patents

Info

Publication number
JPS6331102B2
JPS6331102B2 JP56153250A JP15325081A JPS6331102B2 JP S6331102 B2 JPS6331102 B2 JP S6331102B2 JP 56153250 A JP56153250 A JP 56153250A JP 15325081 A JP15325081 A JP 15325081A JP S6331102 B2 JPS6331102 B2 JP S6331102B2
Authority
JP
Japan
Prior art keywords
plating
bonding
resin
substrate
plating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56153250A
Other languages
English (en)
Other versions
JPS5854644A (ja
Inventor
Tooru Kamata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56153250A priority Critical patent/JPS5854644A/ja
Publication of JPS5854644A publication Critical patent/JPS5854644A/ja
Publication of JPS6331102B2 publication Critical patent/JPS6331102B2/ja
Granted legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
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    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】 本発明はワイヤーボンデイング用樹脂基板に関
し、特に良好なワイヤーボンデイング特性を得る
ことができるワイヤーボンデイング用樹脂基板の
メツキ構造に関するものである。
近年、デジタル時計用Ｃ−MOS素子、発光ダ
イオード素子等の半導体素子を樹脂基板上あるい
は、チツプキヤリアー構造の樹脂積層基板内に載
置し、ワイヤーボンデイング方法により金属細線
で素子の電極と樹脂基板上の導体配線を結線する
構造が開発されている。
このような基板の構造としては、ガラス基材エ
ポキシ樹脂基板あるいは紙基材フエノール樹脂基
板を用いて、その表面上の銅箔部にワツト浴ある
いはスルフアミン酸浴によるNiメツキを２〜10μ
程度施した後、99.99％以上の高純度Auあるいは
高純度Agメツキを、更にその上に0.3〜5μ程度施
した構造が採用されている。ワイヤーボンデイン
グ方法は通常、Au細線の超音波併用ネールヘツ
ドサーマルコンプレツシヨンボンデイング
（USNTCB）方法によつて行なわれ、この場合
の温度は150〜200℃の範囲である。良好なワイヤ
ーボンデイング特性を得る条件としては、以下の
項目があげられる。
第一に、ワイヤーボンド用の金属細線に良電導
性、耐腐食性が優れる金線または金を主体とした
細線が用いられるため、この細線と同種の金また
は銀を基板の最上層とすること。
第二に、基板の最表層を構成する金または銀メ
ツキ層の表面が高度に清浄であること。メツキ膜
表面の汚れはボンデイング特性を著しく阻害す
る。
第三に、ワイヤーボンデイング温度下で、樹脂
基板の軟化がある為、パターン銅箔と最表層Au
またはAgメツキ層との間に硬い層を介在させる
ことである。このことはボンデイング時の金細線
にかかる荷重および起音波振動が軟化した基板樹
脂に吸収されて、ボンデイング接合部に良好な接
合を得るに充分なエネルギーが供給できなくなる
ことを防止するためである。
特に、上記第三の条件に関し、ワイヤーボンデ
イング特性を向上させるために、パターン銅箔と
最上層のAuまたはAgメツキ層との間に介在され
るメツキ層としては、経済性あるいは浴管理・保
守の容易性からして、Niメツキ層が一般的に用
いられている。ワイヤーボンデイング時の温度で
樹脂基板が軟化しても良好なボンデイング特性を
得るためのNiメツキ層の厚さは、厚いほど、ま
た硬さは硬いほどよいが、厚さはパターン精度劣
化をもたらし、一方硬度はメツキ浴組成、および
メツキ条件により必然的に規定される。一般にワ
ツト浴無光沢メツキの硬度は、120〜170マイクロ
ビーカツスであり、この場合のNiメツキ厚みは
樹脂のガラス転移温度、またパターン銅箔厚によ
つて左右されるが、既ね５〜8μが下限値である。
しかしながら、このようなNiメツキ層では十分
な接合強度が得られていないのが現状である。
本発明は強度なボンデイング接合を得るに足る
樹脂基板を提供することを目的とし、パターン銅
箔上にNiを主体としてCoを５〜50％含有させた
合金メツキ層を施し、その上にAuあるいはAgメ
ツキ層などの貴金属層を設けたことを特徴とする
樹脂基板を提供するものである。
Ni−Co合金メツキ層は硫酸ニツケル、塩化ニ
ツケル、ホウ酸よりなるNiメツキ浴に硫酸コバ
ルトを添加することで得ることができる。この時
のビツカース硬度は400〜600であり高硬度のメツ
キ膜が得られ、良好なワイヤーボンデイング特性
を得ることができた。尚Co含有量５％未満の場
合は充分な硬度が得られず、またCo含有量50％
をこえても硬度は上記以上には硬くならず、また
メツキ時のCoの析出速度がNiのそれよりも速い
ためCo量が50％をこえると良好なメツキができ
なくなる。
以下、図面を参照して本発明の一実施例につい
て詳細に説明する。第１図は本発明の一実施例に
よる断面図で、紙基材フエノール樹脂基板または
ガラス基材エポキシ樹脂基板１０の表面には、銅
箔層１１が所望の形状にパターンニングされてい
る。銅箔厚さは18μまたは35μとした。パターン
銅箔１１上にはNi−Co（５〜50％）メツキ層１２
を5μ程度形成し、その上に高純度（99.99％）の
AuまたはAgなどの貴金属（即ち、非酸化性金
属）メツキ層１３を施した。AuまたはAgメツキ
層１３とボンデイング用のAu細線１５は超音波
併用熱圧着ボンデイング方法により接続した。
このように構成された基板メツキ構造によれ
ば、ボンデイング時の温度により樹脂基材が軟化
しても、硬度の高いNi−Co合金メツキ層１２が
介在されているため、ボンデイング時の荷重によ
る導体へこみが生ずることなく、Au細線１５を
AuまたはAgメツキ層１３に良好にボンデイング
することができた。
なお、Niメツキ浴に光沢剤を添加して得られ
る光沢Niメツキでも同様の効果が期待できるが、
光沢メツキの場合自動ボンダーに光学的パターン
認識システムを採用する場合は、メツキ表面で光
の乱反射度合が小さくなり、誤認識を起しやすく
なるという不具合や、基板の目視検査時に同様の
理由で人間の目が疲労しやすいという不具合が生
じて好ましくない。
以上述べた如く、本発明によれば樹脂基板表面
に積層された銅箔層上にNi−Co（５〜50％）合金
メツキ層を形成することにより、良好なワイヤー
ボンデイング特性を有する基板メツキ構造が得ら
れる。
【図面の簡単な説明】
第１図は本発明の一実施例による樹脂基板断面
図である。 １０……樹脂基板、１１……銅箔層、１２……
Ni−Co（５〜10％）合金メツキ層、１３……Au
またはAgメツキ層、１４……半導体素子、１５
……Au細線。

Claims (1)

    【特許請求の範囲】
  1. １ 金線または金を主体とした細線がボンデイン
    グ接続される導体配線が樹脂絶縁基板上に設けら
    れたボンデイング用樹脂基板において、前記導体
    配線は前記樹脂絶縁基板上のパターン銅箔と、該
    パターン銅箔上に設けられ、Coが５〜50％含ま
    れているNi−Co合金と、該Ni−Co合金上に設け
    られたAuまたはAgなどの貴金属層とを有するこ
    とを特徴とするボンデイング用樹脂基板。
JP56153250A 1981-09-28 1981-09-28 ボンデイング用樹脂基板 Granted JPS5854644A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56153250A JPS5854644A (ja) 1981-09-28 1981-09-28 ボンデイング用樹脂基板

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56153250A JPS5854644A (ja) 1981-09-28 1981-09-28 ボンデイング用樹脂基板

Publications (2)

Publication Number Publication Date
JPS5854644A JPS5854644A (ja) 1983-03-31
JPS6331102B2 true JPS6331102B2 (ja) 1988-06-22

Family

ID=15558343

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56153250A Granted JPS5854644A (ja) 1981-09-28 1981-09-28 ボンデイング用樹脂基板

Country Status (1)

Country Link
JP (1) JPS5854644A (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58169942A (ja) * 1982-03-29 1983-10-06 Fujitsu Ltd 半導体装置
JPS61207045A (ja) * 1985-03-11 1986-09-13 Nec Corp 樹脂封止型半導体装置
DE3851968T2 (de) * 1987-02-26 1995-03-30 Canon Kk Bilderzeugungsgerät.
TW314650B (ja) * 1995-06-21 1997-09-01 Oki Electric Ind Co Ltd
JP5015626B2 (ja) 2007-02-05 2012-08-29 株式会社リコー 画像形成装置

Also Published As

Publication number Publication date
JPS5854644A (ja) 1983-03-31

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