JPS6331102B2 - - Google Patents
Info
- Publication number
- JPS6331102B2 JPS6331102B2 JP56153250A JP15325081A JPS6331102B2 JP S6331102 B2 JPS6331102 B2 JP S6331102B2 JP 56153250 A JP56153250 A JP 56153250A JP 15325081 A JP15325081 A JP 15325081A JP S6331102 B2 JPS6331102 B2 JP S6331102B2
- Authority
- JP
- Japan
- Prior art keywords
- plating
- bonding
- resin
- substrate
- plating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 23
- 239000011347 resin Substances 0.000 claims description 20
- 229920005989 resin Polymers 0.000 claims description 20
- 239000010931 gold Substances 0.000 claims description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 239000011889 copper foil Substances 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 229910017709 Ni Co Inorganic materials 0.000 claims description 7
- 229910003267 Ni-Co Inorganic materials 0.000 claims description 7
- 229910003262 Ni‐Co Inorganic materials 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 4
- 229910000510 noble metal Inorganic materials 0.000 claims description 3
- 239000011888 foil Substances 0.000 claims 1
- 238000007747 plating Methods 0.000 description 39
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 11
- 238000000034 method Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- 241000587161 Gomphocarpus Species 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- 208000003464 asthenopia Diseases 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 229910000361 cobalt sulfate Inorganic materials 0.000 description 1
- 229940044175 cobalt sulfate Drugs 0.000 description 1
- KTVIXTQDYHMGHF-UHFFFAOYSA-L cobalt(2+) sulfate Chemical compound [Co+2].[O-]S([O-])(=O)=O KTVIXTQDYHMGHF-UHFFFAOYSA-L 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000003909 pattern recognition Methods 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Wire Bonding (AREA)
Description
【発明の詳細な説明】
本発明はワイヤーボンデイング用樹脂基板に関
し、特に良好なワイヤーボンデイング特性を得る
ことができるワイヤーボンデイング用樹脂基板の
メツキ構造に関するものである。
し、特に良好なワイヤーボンデイング特性を得る
ことができるワイヤーボンデイング用樹脂基板の
メツキ構造に関するものである。
近年、デジタル時計用C−MOS素子、発光ダ
イオード素子等の半導体素子を樹脂基板上あるい
は、チツプキヤリアー構造の樹脂積層基板内に載
置し、ワイヤーボンデイング方法により金属細線
で素子の電極と樹脂基板上の導体配線を結線する
構造が開発されている。
イオード素子等の半導体素子を樹脂基板上あるい
は、チツプキヤリアー構造の樹脂積層基板内に載
置し、ワイヤーボンデイング方法により金属細線
で素子の電極と樹脂基板上の導体配線を結線する
構造が開発されている。
このような基板の構造としては、ガラス基材エ
ポキシ樹脂基板あるいは紙基材フエノール樹脂基
板を用いて、その表面上の銅箔部にワツト浴ある
いはスルフアミン酸浴によるNiメツキを2〜10μ
程度施した後、99.99%以上の高純度Auあるいは
高純度Agメツキを、更にその上に0.3〜5μ程度施
した構造が採用されている。ワイヤーボンデイン
グ方法は通常、Au細線の超音波併用ネールヘツ
ドサーマルコンプレツシヨンボンデイング
(USNTCB)方法によつて行なわれ、この場合
の温度は150〜200℃の範囲である。良好なワイヤ
ーボンデイング特性を得る条件としては、以下の
項目があげられる。
ポキシ樹脂基板あるいは紙基材フエノール樹脂基
板を用いて、その表面上の銅箔部にワツト浴ある
いはスルフアミン酸浴によるNiメツキを2〜10μ
程度施した後、99.99%以上の高純度Auあるいは
高純度Agメツキを、更にその上に0.3〜5μ程度施
した構造が採用されている。ワイヤーボンデイン
グ方法は通常、Au細線の超音波併用ネールヘツ
ドサーマルコンプレツシヨンボンデイング
(USNTCB)方法によつて行なわれ、この場合
の温度は150〜200℃の範囲である。良好なワイヤ
ーボンデイング特性を得る条件としては、以下の
項目があげられる。
第一に、ワイヤーボンド用の金属細線に良電導
性、耐腐食性が優れる金線または金を主体とした
細線が用いられるため、この細線と同種の金また
は銀を基板の最上層とすること。
性、耐腐食性が優れる金線または金を主体とした
細線が用いられるため、この細線と同種の金また
は銀を基板の最上層とすること。
第二に、基板の最表層を構成する金または銀メ
ツキ層の表面が高度に清浄であること。メツキ膜
表面の汚れはボンデイング特性を著しく阻害す
る。
ツキ層の表面が高度に清浄であること。メツキ膜
表面の汚れはボンデイング特性を著しく阻害す
る。
第三に、ワイヤーボンデイング温度下で、樹脂
基板の軟化がある為、パターン銅箔と最表層Au
またはAgメツキ層との間に硬い層を介在させる
ことである。このことはボンデイング時の金細線
にかかる荷重および起音波振動が軟化した基板樹
脂に吸収されて、ボンデイング接合部に良好な接
合を得るに充分なエネルギーが供給できなくなる
ことを防止するためである。
基板の軟化がある為、パターン銅箔と最表層Au
またはAgメツキ層との間に硬い層を介在させる
ことである。このことはボンデイング時の金細線
にかかる荷重および起音波振動が軟化した基板樹
脂に吸収されて、ボンデイング接合部に良好な接
合を得るに充分なエネルギーが供給できなくなる
ことを防止するためである。
特に、上記第三の条件に関し、ワイヤーボンデ
イング特性を向上させるために、パターン銅箔と
最上層のAuまたはAgメツキ層との間に介在され
るメツキ層としては、経済性あるいは浴管理・保
守の容易性からして、Niメツキ層が一般的に用
いられている。ワイヤーボンデイング時の温度で
樹脂基板が軟化しても良好なボンデイング特性を
得るためのNiメツキ層の厚さは、厚いほど、ま
た硬さは硬いほどよいが、厚さはパターン精度劣
化をもたらし、一方硬度はメツキ浴組成、および
メツキ条件により必然的に規定される。一般にワ
ツト浴無光沢メツキの硬度は、120〜170マイクロ
ビーカツスであり、この場合のNiメツキ厚みは
樹脂のガラス転移温度、またパターン銅箔厚によ
つて左右されるが、既ね5〜8μが下限値である。
しかしながら、このようなNiメツキ層では十分
な接合強度が得られていないのが現状である。
イング特性を向上させるために、パターン銅箔と
最上層のAuまたはAgメツキ層との間に介在され
るメツキ層としては、経済性あるいは浴管理・保
守の容易性からして、Niメツキ層が一般的に用
いられている。ワイヤーボンデイング時の温度で
樹脂基板が軟化しても良好なボンデイング特性を
得るためのNiメツキ層の厚さは、厚いほど、ま
た硬さは硬いほどよいが、厚さはパターン精度劣
化をもたらし、一方硬度はメツキ浴組成、および
メツキ条件により必然的に規定される。一般にワ
ツト浴無光沢メツキの硬度は、120〜170マイクロ
ビーカツスであり、この場合のNiメツキ厚みは
樹脂のガラス転移温度、またパターン銅箔厚によ
つて左右されるが、既ね5〜8μが下限値である。
しかしながら、このようなNiメツキ層では十分
な接合強度が得られていないのが現状である。
本発明は強度なボンデイング接合を得るに足る
樹脂基板を提供することを目的とし、パターン銅
箔上にNiを主体としてCoを5〜50%含有させた
合金メツキ層を施し、その上にAuあるいはAgメ
ツキ層などの貴金属層を設けたことを特徴とする
樹脂基板を提供するものである。
樹脂基板を提供することを目的とし、パターン銅
箔上にNiを主体としてCoを5〜50%含有させた
合金メツキ層を施し、その上にAuあるいはAgメ
ツキ層などの貴金属層を設けたことを特徴とする
樹脂基板を提供するものである。
Ni−Co合金メツキ層は硫酸ニツケル、塩化ニ
ツケル、ホウ酸よりなるNiメツキ浴に硫酸コバ
ルトを添加することで得ることができる。この時
のビツカース硬度は400〜600であり高硬度のメツ
キ膜が得られ、良好なワイヤーボンデイング特性
を得ることができた。尚Co含有量5%未満の場
合は充分な硬度が得られず、またCo含有量50%
をこえても硬度は上記以上には硬くならず、また
メツキ時のCoの析出速度がNiのそれよりも速い
ためCo量が50%をこえると良好なメツキができ
なくなる。
ツケル、ホウ酸よりなるNiメツキ浴に硫酸コバ
ルトを添加することで得ることができる。この時
のビツカース硬度は400〜600であり高硬度のメツ
キ膜が得られ、良好なワイヤーボンデイング特性
を得ることができた。尚Co含有量5%未満の場
合は充分な硬度が得られず、またCo含有量50%
をこえても硬度は上記以上には硬くならず、また
メツキ時のCoの析出速度がNiのそれよりも速い
ためCo量が50%をこえると良好なメツキができ
なくなる。
以下、図面を参照して本発明の一実施例につい
て詳細に説明する。第1図は本発明の一実施例に
よる断面図で、紙基材フエノール樹脂基板または
ガラス基材エポキシ樹脂基板10の表面には、銅
箔層11が所望の形状にパターンニングされてい
る。銅箔厚さは18μまたは35μとした。パターン
銅箔11上にはNi−Co(5〜50%)メツキ層12
を5μ程度形成し、その上に高純度(99.99%)の
AuまたはAgなどの貴金属(即ち、非酸化性金
属)メツキ層13を施した。AuまたはAgメツキ
層13とボンデイング用のAu細線15は超音波
併用熱圧着ボンデイング方法により接続した。
て詳細に説明する。第1図は本発明の一実施例に
よる断面図で、紙基材フエノール樹脂基板または
ガラス基材エポキシ樹脂基板10の表面には、銅
箔層11が所望の形状にパターンニングされてい
る。銅箔厚さは18μまたは35μとした。パターン
銅箔11上にはNi−Co(5〜50%)メツキ層12
を5μ程度形成し、その上に高純度(99.99%)の
AuまたはAgなどの貴金属(即ち、非酸化性金
属)メツキ層13を施した。AuまたはAgメツキ
層13とボンデイング用のAu細線15は超音波
併用熱圧着ボンデイング方法により接続した。
このように構成された基板メツキ構造によれ
ば、ボンデイング時の温度により樹脂基材が軟化
しても、硬度の高いNi−Co合金メツキ層12が
介在されているため、ボンデイング時の荷重によ
る導体へこみが生ずることなく、Au細線15を
AuまたはAgメツキ層13に良好にボンデイング
することができた。
ば、ボンデイング時の温度により樹脂基材が軟化
しても、硬度の高いNi−Co合金メツキ層12が
介在されているため、ボンデイング時の荷重によ
る導体へこみが生ずることなく、Au細線15を
AuまたはAgメツキ層13に良好にボンデイング
することができた。
なお、Niメツキ浴に光沢剤を添加して得られ
る光沢Niメツキでも同様の効果が期待できるが、
光沢メツキの場合自動ボンダーに光学的パターン
認識システムを採用する場合は、メツキ表面で光
の乱反射度合が小さくなり、誤認識を起しやすく
なるという不具合や、基板の目視検査時に同様の
理由で人間の目が疲労しやすいという不具合が生
じて好ましくない。
る光沢Niメツキでも同様の効果が期待できるが、
光沢メツキの場合自動ボンダーに光学的パターン
認識システムを採用する場合は、メツキ表面で光
の乱反射度合が小さくなり、誤認識を起しやすく
なるという不具合や、基板の目視検査時に同様の
理由で人間の目が疲労しやすいという不具合が生
じて好ましくない。
以上述べた如く、本発明によれば樹脂基板表面
に積層された銅箔層上にNi−Co(5〜50%)合金
メツキ層を形成することにより、良好なワイヤー
ボンデイング特性を有する基板メツキ構造が得ら
れる。
に積層された銅箔層上にNi−Co(5〜50%)合金
メツキ層を形成することにより、良好なワイヤー
ボンデイング特性を有する基板メツキ構造が得ら
れる。
第1図は本発明の一実施例による樹脂基板断面
図である。 10……樹脂基板、11……銅箔層、12……
Ni−Co(5〜10%)合金メツキ層、13……Au
またはAgメツキ層、14……半導体素子、15
……Au細線。
図である。 10……樹脂基板、11……銅箔層、12……
Ni−Co(5〜10%)合金メツキ層、13……Au
またはAgメツキ層、14……半導体素子、15
……Au細線。
Claims (1)
- 1 金線または金を主体とした細線がボンデイン
グ接続される導体配線が樹脂絶縁基板上に設けら
れたボンデイング用樹脂基板において、前記導体
配線は前記樹脂絶縁基板上のパターン銅箔と、該
パターン銅箔上に設けられ、Coが5〜50%含ま
れているNi−Co合金と、該Ni−Co合金上に設け
られたAuまたはAgなどの貴金属層とを有するこ
とを特徴とするボンデイング用樹脂基板。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56153250A JPS5854644A (ja) | 1981-09-28 | 1981-09-28 | ボンデイング用樹脂基板 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56153250A JPS5854644A (ja) | 1981-09-28 | 1981-09-28 | ボンデイング用樹脂基板 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5854644A JPS5854644A (ja) | 1983-03-31 |
JPS6331102B2 true JPS6331102B2 (ja) | 1988-06-22 |
Family
ID=15558343
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56153250A Granted JPS5854644A (ja) | 1981-09-28 | 1981-09-28 | ボンデイング用樹脂基板 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5854644A (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58169942A (ja) * | 1982-03-29 | 1983-10-06 | Fujitsu Ltd | 半導体装置 |
JPS61207045A (ja) * | 1985-03-11 | 1986-09-13 | Nec Corp | 樹脂封止型半導体装置 |
DE3851968T2 (de) * | 1987-02-26 | 1995-03-30 | Canon Kk | Bilderzeugungsgerät. |
TW314650B (ja) * | 1995-06-21 | 1997-09-01 | Oki Electric Ind Co Ltd | |
JP5015626B2 (ja) | 2007-02-05 | 2012-08-29 | 株式会社リコー | 画像形成装置 |
-
1981
- 1981-09-28 JP JP56153250A patent/JPS5854644A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5854644A (ja) | 1983-03-31 |
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