JPS60207357A - 半導体用ボンディング細線 - Google Patents

半導体用ボンディング細線

Info

Publication number
JPS60207357A
JPS60207357A JP59064484A JP6448484A JPS60207357A JP S60207357 A JPS60207357 A JP S60207357A JP 59064484 A JP59064484 A JP 59064484A JP 6448484 A JP6448484 A JP 6448484A JP S60207357 A JPS60207357 A JP S60207357A
Authority
JP
Japan
Prior art keywords
alloy
wire
bonding
core
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59064484A
Other languages
English (en)
Other versions
JPH0460345B2 (ja
Inventor
Shoji Shiga
志賀　章二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Priority to JP59064484A priority Critical patent/JPS60207357A/ja
Publication of JPS60207357A publication Critical patent/JPS60207357A/ja
Publication of JPH0460345B2 publication Critical patent/JPH0460345B2/ja
Granted legal-status Critical Current

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    • H—ELECTRICITY
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L2224/4501—Shape
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    • H01L2224/45601—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
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  • Engineering & Computer Science (AREA)
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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 本発明は半導体用？ンディング細線の改良に関するもの
である。
従来Ｉ　Ｃ、ＬＳＩ或はハイブリッドＩＣなどの半導体
において、Ｓｌチップなどの半導体素子上に形成された
電極をリードフレームや基板リードとの間の電気接続を
行う目的で１５〜６０μφ程度のＡｕ細線十Ａｔ−８１
合金細線が使用されている。前者の細線は熱融着超音波
ボンディング法などによシ高生産性でポンディングを行
うことが出来且つ耐食性を有するため広く利用されてい
るが、その欠点は著しく高価なことである。
又一方後者の細線はＡｕ　＠に比して安価であるが、大
気雰囲気中において熱融着法などの？ンディング方法を
適用することが出来ず生産性に劣ると共に腐食し易く半
導体使用時の断線等の故障をまねき易い。特にエポキシ
樹脂等の汎用樹脂モールド半導体においては核樹脂の透
湿性と塩素汚染によってＡｔ線の腐食は大きな問題とな
っていた。
とのＡｔ合金線に代えてＣｕ又はＣｕ合金線を使用する
試みもあるが、細線の腐食問題においてＡ４合金線よシ
稍改良されるが、実用的には大きなネックとなるもので
あった。更にこの合金線にＡｇを被覆したものを利用す
る試みもあるが、樹脂モールド半導体などにおいて激し
いマイグレージ日ンをおこして回路短絡の障害となるも
のであった。
なお前記のＣｕ又はＣｕ合金線においてもマイグレーシ
ョンをおこすがこのＡｇ線よシ低いものである。
本発明はかかる現状に鑑み鋭意研究を行った結果、経済
性に優れ且つ高性能を有する実用的なデンディング細線
を見出したものである。即ち本発明はＣｕ又はＣｕ合金
の心線の外周に直接又は中間層を介してＩｎ、　ｚｎ、
　Ｃｄ又はとれらの合金の内から選ばれた１種の被覆層
を設けたととを特徴とするものである。
本発明における心線のＣｕ合金としては例えばＣｕ−８
ｎ＋　Ｃｕ−Ｆｅ、　Ｃｕ−Ａｇ、　Ｃｕ−Ｚｒ、　Ｃ
ｕ−Ｚｎ　尋であり、又被覆層の合金としては例えば５
ｎ−Ｚｎ、　Ｚｎ−Ｃｄ。
５ｎ−Ｉｎ、　Ｚｎ−Ｃｄ−Ｃｕ＋　Ｚｎ−Ｃｕ＋　Ｉ
ｎ−Ｃｄ等である。
この被覆層の厚さについては特に限定するものではない
が通常０．０３〜５μ程度が好ましい。
その理由は０．０３μ未満の場合には本発明の効果を発
揮することができずＣｕ又はＣｕ合金の心線のみとほぼ
同様となるものであり、又５μを超えると経済的に高く
なると共にボンディング部の脆化をまねくことになる。
即ちこの被覆層を形成せる金属又は合金は何れもＣｕよ
り電気化学的に寒５金属であるため、Ｃｕと加熱合金化
するとＣｕの耐食性を阻害することなく機械的強度を向
上することができるため、デンディング細線として使用
した場合次の如き半導体用デンディングとして優れた効
果をもたらすものである。
（１）被覆層が特性陽極的に作用するため、たとえ塩分
や水分にさらされても心線が腐食することなく従って断
線の事故を生じ彦い。
（２）表面がマイグレーションをおこさない金属で被覆
されているため短絡をおこす危険がない。
（３）　熱融着がンディングにおいて、がンディングに
よシ合金化して機械的強度が向上するためぜンディング
強化を図ることが出来る。
（４）転位の上昇を抑止しつる被覆層の効果によυ細線
自身の機械的強度が向上し、合金化しなくても上記（３
）の効果と相俟って高導電性にして安価な純銅を心線と
して利用するととができる。
又本発明は心線と被覆層との間に中間層を設けてもよく
、中間層として例えばＮｌ、Ｃｏ又はＮｉ−Ｃｏ、　Ｎ
１−Ｐ、　Ｃｏ−Ｂ、　Ｎ１−Ｆｅ、　Ｎ１−Ｚｎ　ｉ
ｋどの合金を介在させるものである。この厚さについて
も特に限定するものではなく望ましくは０，０１〜０．
５μが好ましい。その理由はこの中間層を設けることに
よシ上記（１）〜（４）の効果を更に向上せしめると共
に心線と被覆層との反応を抑止せしめて導電率を安定に
保持することができる。従ってその厚さが０．０１μ未
満の場合にはその効果を発揮することが出来ず、又０，
５μをこえてもそれ程効果に期待出来ないためである。
又本発明デンディング線は常法によシ雰囲気超音波熱圧
着法よシがンディングすることが出来る。
又被覆層はＣｕ又はＣｕ合金の心線に真空メッキ、ホッ
トディッゾ、機械的接合等により被覆５− できるが、電気メツキ法によシ製造することが最も有利
である。
次に本発明の実施例について説明する。
実施例 無酸素銅線（２０μφ）とＳｎ人銅線（Ｃｕ−０，１５
Ｓｎ−０，００５Ｐ　、　２０　ＩＩφ）との表面に第
１表に示すメッキを施して本発明がンディング細線及び
比較例デンディング細線をえた。
これらの細線を用いてＳ１チツプをダイデンディングし
た。即ち１６ピンのリードフレーム（Ｃｕ−０，１５Ｓ
ｎ−０，０ＩＰ　）に雰囲気超音波熱圧着法によシワイ
ヤーゲンドを行った。ボンディングの条件は雰囲気１０
憾Ｈ２−Ｎ２、リードフレーム温度１９５℃、がンディ
ング圧５０ｇ（第１？ンデイング）と９０．１ｉｌｒ　
（第２Ｔｆンデイング）にて行った。
デンディングした後プルテスターにてボンディング強度
を測定し、又デンディングしたリードフレームをエポキ
シ樹脂にてモードとしてＩＣを作製し、１３０℃にてプ
レッ７０−クッ６一 カーに２０００　Ｈｒ、１２Ｖ印加で保持した後電気測
定して断線及び短絡の確率を測定した。
その結果は第１表に併記した通りである。
第　１　表 註（１）　Ｉｎメッキ ＩｎＣ４３２０９／−ｅ　、　ＫＣＮ　１５０１１／４
３　、　ＫＯＨ３０９／４３　％デキストローゼ３０１
１／４３の混液（２０℃）にょシＤ　Ｃ＝　２　Ａ７ｄ
ｍ２にて行った。
（２）　Ｃｕ−４０Ｚｎメッキ ＣｕＣＮ　１７９／−ｅ、Ｚｎ（ＣＮ）２１００ｙ々、
ＫＣＮ　５０ｆｉ／４３ＮａＯＨ６０１７／４３の混液
（３５℃）によ’）２−５Ｖｄｍ２にて行った。
（３）ｃｄメッキ ｃｃｉ（ｃＮ）２３５ＶＩ３　、　ＫＣＮ　１００．！
ｉｌ／Ａ　、　ＫＯＨ５０ＩＩＡの混液（３０℃）にょ
シＤｃ＝＝４Ａ／ｄｍ２にて行った。
（４）　Ｚｎメッキ Ｚｎ（ＣＮ）ｚ　６０１／／４、ＮａＣＮ　４０９／４
３　、、　ＮａＯＨＢｏｇ／４３の混液（３５℃）にょ
シＤ　Ｃ＝　３　Ｖｄｍ　Ｋて行った。
（５）　Ｎｉ−１０Ｃｏメツキ Ｎｌ５０４２４０１１／４３、Ｎ５ｃｔ２３ｏ９／、８
、ｃｏｓｏ４１５ミ句、Ｈ，Ｂｏ、　３０ＩＩＡ（７）
混液（６０℃、ｐＨ３，２）によＦ）　Ｄ　Ｃ＝　３．
５　Ａ／ｄｍ２にて行った。
（６）　Ａｇメッキ （ストライクメッキ） ＡｇＣＮ　３．！ｉ’ｚ句、ＫＣＮ　３０ｇβの混液（
２０℃）によＪ）　Ｄ　Ｃ＝　３　Ａ７ｄｍ２５秒行っ
た（、枠付はメッキ） ＡｇＣＮ　３０Ｅｂ句、ＫＣＮ　４０Ｆ々、Ｋ２Ｃｏ、
　１０み句の混液（２０℃）によＪ）ＤＣ＝１．５　Ａ
７ｄｍ２にて行った。
上表よυ明らかの如く本発明による？ンディング細線は
Ａｕ線と同様に断線及び短絡することなく、且つ優れた
強度を有することが認められた。又Ｃｕ線では短絡が観
測されなかったが、ＩＣを破壊して電子顕微鏡にて測定
したところＣｕのマイグレーシロンが見られた。しかし
本発明細線ではこのような現象は全く痕跡が見られなか
った。
以上詳述した如く本発明半導体用がンディング細線によ
れば高価なＡｕ線に代って安価にしてしかも高性能を有
する等工業的に極めて有用なものである。
出願人代理人　弁理士　鈴　江　武　彦９−

Claims (3)

    【特許請求の範囲】
  1. （１）　Ｃｕ又はＣｕ合金の心線の外周に直接又は中間
    層を介してＩｎｎ　Ｚｎ、　Ｃａ、又はこれらの合金の
    内から選ばれた１種の被覆層を設けたことを特徴とする
    半導体用がンディング細線。
  2. （２）中間層としてＮｉ＋　Ｃｏ又はこれらの合金から
    なることを特徴とする特許請求の範囲第１項記載の半導
    体用ゲンディング細線。
  3. （３）　被覆層の厚さを０１０３〜５μにしたことを特
    徴とする特許請求の範囲第１項記載の半導体用ゲンディ
    ング細線。
JP59064484A 1984-03-31 1984-03-31 半導体用ボンディング細線 Granted JPS60207357A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59064484A JPS60207357A (ja) 1984-03-31 1984-03-31 半導体用ボンディング細線

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59064484A JPS60207357A (ja) 1984-03-31 1984-03-31 半導体用ボンディング細線

Publications (2)

Publication Number Publication Date
JPS60207357A true JPS60207357A (ja) 1985-10-18
JPH0460345B2 JPH0460345B2 (ja) 1992-09-25

Family

ID=13259535

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59064484A Granted JPS60207357A (ja) 1984-03-31 1984-03-31 半導体用ボンディング細線

Country Status (1)

Country Link
JP (1) JPS60207357A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103943584A (zh) * 2013-01-18 2014-07-23 日月光半导体制造股份有限公司 用于半导体装置的焊线

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103943584A (zh) * 2013-01-18 2014-07-23 日月光半导体制造股份有限公司 用于半导体装置的焊线

Also Published As

Publication number Publication date
JPH0460345B2 (ja) 1992-09-25

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