JPS5854644A - ボンデイング用樹脂基板 - Google Patents

ボンデイング用樹脂基板

Info

Publication number
JPS5854644A
JPS5854644A JP56153250A JP15325081A JPS5854644A JP S5854644 A JPS5854644 A JP S5854644A JP 56153250 A JP56153250 A JP 56153250A JP 15325081 A JP15325081 A JP 15325081A JP S5854644 A JPS5854644 A JP S5854644A
Authority
JP
Japan
Prior art keywords
layer
resin substrate
bonding
plating
plating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56153250A
Other languages
English (en)
Other versions
JPS6331102B2 (ja
Inventor
Toru Kamata
徹 鎌田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56153250A priority Critical patent/JPS5854644A/ja
Publication of JPS5854644A publication Critical patent/JPS5854644A/ja
Publication of JPS6331102B2 publication Critical patent/JPS6331102B2/ja
Granted legal-status Critical Current

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    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/45144—Gold (Au) as principal constituent
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 本発明はワイヤーポンディング用樹脂基板に関し、轡に
良好なワイヤーがンデイｙグ特性を得ることができるワ
イヤーボンディング用樹脂基板のメッキ構造に関するも
のである。
近年、デジタル時計量Ｃ−ＭＯ８素子、発光ダイオード
素子等の半導体素子を樹脂基板上あるいは、チップキャ
リアー構造の樹脂積層基板内に載置シ、ワイヤーポンデ
ィング方法により金属細線で素子の電極と樹脂基板上の
導体配線を結線する構造が開発されでいる。
このような基板の構造としては、ガラス基材エポキシ樹
脂基板あるいは紙基材フェノール樹脂基板を用いて、そ
の表面上の鋼箔部にワット浴あるいはスルファミン酸浴
による。Ｎゑメッキを２〜１０ａ１ｉ＆施した後、９９
．９９％以上の高純度ムＵある−は高純ＩＥＡｇメッキ
を、更にその上に０．３〜５Ａ程度施した構造が採用さ
れている。ワイヤーボンディング方法は通常％Ａｕ細線
の超音波併用ネールヘッドサー！ルコンプレッシ、ンボ
ンディング（Ｕ８ＮＴＣＢ）方法によって行なわれ、こ
の場合の温度は１５０〜２００℃の範囲である。良好な
ワイヤーボンディング特性を得る条件としては、以下の
項目があげられる。
第一に、ワイヤーボンド用の金属細線に良電導性、耐腐
食性が優れる金！１！または金を主体とした細線が用い
られるため、この細線と同種の金または鎖管基板の最上
層とすること。
第二に、基板の最表層を構成する金ま九は銀メツキ層の
表面が高ｆＫ＃＃であること、メッキ属表面の汚れはボ
ンディング特性を著しく阻害する。
第三に、ワイヤーポンディンダ温度下で、樹脂基板の軟
化がある為、パターンｌｌＩ４′＃Ｉと最表層Ａｕまた
はＡｇメッキ層との間に硬い層を介在させることである
。このことはボンディング時の金細線にかかる荷重およ
び超音波振動が軟化した。基材樹脂に吸収されて、ボン
ディング接合部に良好な接合を得るに充分なエネルギー
が供給できなくなることＹｔ紡止するためである。
特に、上記第三の条件Ｋ１１１シ、ワイヤーボンディン
グ特性量向上させる九めに、パターン鋼箔と最上層のム
ｕｔ良はＡｇメッキ層との間に介在されるメッキ層とし
ては、経済性あるいは浴管理・保守の容品性からして、
ｌ’Ｊ１メッキ層が一般的に用いられている。ワイヤー
ボンディング時の温度で樹脂基板が軟化しても良好なボ
ンディング特性を得るためのＮｉメッキ層の厚さは、厚
いほど、また硬さは硬いほどよいが、厚さはパターン精
度劣化をｔたらし、一方硬度はメッキ浴組成、およりッ
ト浴無光沢メッキの硬度は、１２０〜１７０マイクロビ
ーカツスであり、この場合のＮ１メツ＊厚＋１１樹脂の
ガラス転移温度、またパターン鋼箔厚によりて左右され
るが、既ね５〜８Ｊ１が下限値である。しかしながら、
このよりな姐メッキ層では十分な接合強度が得られてい
ないのが現状である。
本発明は強度なボンディング接合を得るに足る樹脂基板
を提供することを目的とし、パターン鋼箔上にＮ１を主
体としてＣｏを５〜５ｏチ含有させた合金メッキ層を施
し、その上ＫＡｕあるいはＡｇメッキ層などの貴金属層
を設けたことを特徴とする樹脂基板を提供するものであ
る。
Ｎｉ−Ｃｏ合金メッキ層は硫酸ニッケル、塩化ニッケル
、ホウ酸よりなるＮ１メッキ浴に硫酸＝バルトを添加す
ることで得ることができる。この時のビッカース硬度は
４００〜６００であ）高硬度のメッキ膜が得られ、良好
なワイヤーボンディング特性を得ることができた。尚Ｃ
ｏ含有量５％未満の場合は充分な硬度が得られず、また
ＣＯ含有量５０ｇ６をこえても硬度は上記以上には硬く
ならず、１７ｔメッキ時のＣｏの析出速度がＮｌのそれ
よりも連込ためＣｏ量が５０饅管こえると良好なメッキ
ができなくなる。
以下、図面を参照して本発明の一実施例について詳細に
説明する。第１図は本発明の一実施例による断面図で、
紙基材フェノール樹脂基板またはガラス基材エポキシ樹
脂基板１００表面には、銅箔層１１が所望の形状にパタ
ーン鋼箔グされている。銅箔厚さＦｉｌ　８　ｓまたは
３５μとした。パターン鋼箔１１上に扛Ｎ１−Ｃｏ（５
〜５０　ｇ＆　）　メｖキ層１２ｔ−５μ程度形成し、
その上に高純獣筐海）のムＵまたｔｉｉｇ　　などの貴
金属（即ち、非酸化性金属）メッキ層１３ｔ−施した。
ムｕｔた拡ムｇメ。
キ層１３とボンディング用のＡｕ細線１５Ｆｉ超音波併
用熱圧着ボンディング方法により接続し危。
このように構成された基板メッキ構造によれば、ボンデ
ィング時の温度により樹脂基材が軟化しても、硬度の高
いＮｉ−Ｃｏ合金メッキ層１２が介在されてい為ため、
ボンディング時の荷重による導体へこみが生ずることな
（、Ａｕ細線１５ｔＡｕまたはＡｇメッキ層１３＃Ｃ良
好にボンディングすることかで１また。
なお、Ｎｔメッキ浴に光沢剤を添加して得られる光沢Ｎ
１メッキでも同様の効果が期待できるが、光沢メツ中の
場合自動ボンダーに光学的パターン認識システムを採用
すゐ場合は、メーツキ表面で光の乱反射度合が小さくな
り、誤Ｉｊ！ｌ１ｌｔ起しやすくなるという不具合や、
基板の目視検査時に同様の理由で人間の目が疲労しやす
いという不具合が生じて好ましく危い。
以上述べた如く、本発明によれば樹脂基板表面に積層さ
れた銅箔層上にＮｉ　−Ｃｏ　（５〜５０嘔）合金メッ
キ層を形成することによシ、良好なワイヤーボンディン
グ特性を有する基板メッキ構造が得られる。
【図面の簡単な説明】
第１図は本発明の一実施例による樹脂基板断面図である
。 １０・・・・・・樹脂基板、１１・・・・・・銅箔層、
１２・・・・・・Ｎ１−Ｃｏ（５〜１０％）合金メッキ
層、１３・・・・・・Ａｕｔたはムｇメッキ層、１４・
・・・・・牛導体素子、１５・・・・・・ム竪細線。 ０ 第１　図

Claims (1)

    【特許請求の範囲】
  1. 配線金属がポンディ：／ｌ＠絖される樹脂絶縁基ｔｈＫ
    エッケループパルト舎会メ、キ層が設けられていること
    七特徴とするポンディング用樹脂基板。
JP56153250A 1981-09-28 1981-09-28 ボンデイング用樹脂基板 Granted JPS5854644A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56153250A JPS5854644A (ja) 1981-09-28 1981-09-28 ボンデイング用樹脂基板

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56153250A JPS5854644A (ja) 1981-09-28 1981-09-28 ボンデイング用樹脂基板

Publications (2)

Publication Number Publication Date
JPS5854644A true JPS5854644A (ja) 1983-03-31
JPS6331102B2 JPS6331102B2 (ja) 1988-06-22

Family

ID=15558343

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56153250A Granted JPS5854644A (ja) 1981-09-28 1981-09-28 ボンデイング用樹脂基板

Country Status (1)

Country Link
JP (1) JPS5854644A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4558346A (en) * 1982-03-29 1985-12-10 Fujitsu Limited Highly reliable hermetically sealed package for a semiconductor device
JPS61207045A (ja) * 1985-03-11 1986-09-13 Nec Corp 樹脂封止型半導体装置
US5164779A (en) * 1987-02-26 1992-11-17 Canon Kabushiki Kaisha Image forming apparatus with dual voltage supplies for selectively charging and discharging an image bearing member
EP1396886A3 (en) * 1995-06-21 2004-07-07 Oki Electric Industry Company, Limited Semiconductor device having the inner end of connector leads placed onto the surface of semiconductor chip
US7664433B2 (en) 2007-02-05 2010-02-16 Ricoh Company, Ltd. Cleaning of a charging member in an image forming apparatus

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4558346A (en) * 1982-03-29 1985-12-10 Fujitsu Limited Highly reliable hermetically sealed package for a semiconductor device
JPS61207045A (ja) * 1985-03-11 1986-09-13 Nec Corp 樹脂封止型半導体装置
US5164779A (en) * 1987-02-26 1992-11-17 Canon Kabushiki Kaisha Image forming apparatus with dual voltage supplies for selectively charging and discharging an image bearing member
US5585894A (en) * 1987-02-26 1996-12-17 Canon Kabushiki Kaisha Process cartridge with a movable image bearing member as well as a contactable member, and an image forming apparatus having the same
EP1396886A3 (en) * 1995-06-21 2004-07-07 Oki Electric Industry Company, Limited Semiconductor device having the inner end of connector leads placed onto the surface of semiconductor chip
US7664433B2 (en) 2007-02-05 2010-02-16 Ricoh Company, Ltd. Cleaning of a charging member in an image forming apparatus

Also Published As

Publication number Publication date
JPS6331102B2 (ja) 1988-06-22

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