JPH0249519B2 - - Google Patents

Info

Publication number
JPH0249519B2
JPH0249519B2 JP58179610A JP17961083A JPH0249519B2 JP H0249519 B2 JPH0249519 B2 JP H0249519B2 JP 58179610 A JP58179610 A JP 58179610A JP 17961083 A JP17961083 A JP 17961083A JP H0249519 B2 JPH0249519 B2 JP H0249519B2
Authority
JP
Japan
Prior art keywords
circuit
source
current
terminal
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58179610A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6070591A (ja
Inventor
Hiroyuki Obata
Kyokazu Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP58179610A priority Critical patent/JPS6070591A/ja
Publication of JPS6070591A publication Critical patent/JPS6070591A/ja
Publication of JPH0249519B2 publication Critical patent/JPH0249519B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Amplifiers (AREA)
  • Read Only Memory (AREA)
JP58179610A 1983-09-28 1983-09-28 センスアンプ Granted JPS6070591A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58179610A JPS6070591A (ja) 1983-09-28 1983-09-28 センスアンプ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58179610A JPS6070591A (ja) 1983-09-28 1983-09-28 センスアンプ

Publications (2)

Publication Number Publication Date
JPS6070591A JPS6070591A (ja) 1985-04-22
JPH0249519B2 true JPH0249519B2 (de) 1990-10-30

Family

ID=16068756

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58179610A Granted JPS6070591A (ja) 1983-09-28 1983-09-28 センスアンプ

Country Status (1)

Country Link
JP (1) JPS6070591A (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0777080B2 (ja) * 1985-05-08 1995-08-16 セイコーエプソン株式会社 センス増幅回路
JPH0756750B2 (ja) * 1985-06-12 1995-06-14 日本電気株式会社 センスアンプ
US4713797A (en) * 1985-11-25 1987-12-15 Motorola Inc. Current mirror sense amplifier for a non-volatile memory
JPS62222491A (ja) * 1986-03-24 1987-09-30 Nec Corp センスアンプ
JP2712313B2 (ja) * 1988-06-27 1998-02-10 日本電気株式会社 センスアンプ
JPH02103797A (ja) * 1988-10-12 1990-04-16 Hitachi Ltd センスアンプ回路
JPH04362597A (ja) * 1991-06-10 1992-12-15 Nec Ic Microcomput Syst Ltd 電流センスアンプ回路
KR100618840B1 (ko) * 2004-06-29 2006-09-01 삼성전자주식회사 저 전원전압 플래쉬 메모리장치의 감지회로
JP4562480B2 (ja) * 2004-09-29 2010-10-13 凸版印刷株式会社 センスアンプ回路
JP5048535B2 (ja) * 2008-01-29 2012-10-17 ルネサスエレクトロニクス株式会社 センスアンプ回路、及びそれを用いた半導体記憶装置
US11875838B2 (en) 2019-07-12 2024-01-16 Semiconductor Energy Laboratory Co., Ltd. Memory device, semiconductor device, and electronic device

Also Published As

Publication number Publication date
JPS6070591A (ja) 1985-04-22

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