JPH0223030B2 - - Google Patents

Info

Publication number
JPH0223030B2
JPH0223030B2 JP57223053A JP22305382A JPH0223030B2 JP H0223030 B2 JPH0223030 B2 JP H0223030B2 JP 57223053 A JP57223053 A JP 57223053A JP 22305382 A JP22305382 A JP 22305382A JP H0223030 B2 JPH0223030 B2 JP H0223030B2
Authority
JP
Japan
Prior art keywords
film
sio
substrate
sputtering
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57223053A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59114828A (ja
Inventor
Toshiaki Myajima
Masayoshi Koba
Atsushi Kudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP57223053A priority Critical patent/JPS59114828A/ja
Publication of JPS59114828A publication Critical patent/JPS59114828A/ja
Publication of JPH0223030B2 publication Critical patent/JPH0223030B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/60—

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP57223053A 1982-12-21 1982-12-21 酸化シリコン膜の製造方法 Granted JPS59114828A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57223053A JPS59114828A (ja) 1982-12-21 1982-12-21 酸化シリコン膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57223053A JPS59114828A (ja) 1982-12-21 1982-12-21 酸化シリコン膜の製造方法

Publications (2)

Publication Number Publication Date
JPS59114828A JPS59114828A (ja) 1984-07-03
JPH0223030B2 true JPH0223030B2 (OSRAM) 1990-05-22

Family

ID=16792093

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57223053A Granted JPS59114828A (ja) 1982-12-21 1982-12-21 酸化シリコン膜の製造方法

Country Status (1)

Country Link
JP (1) JPS59114828A (OSRAM)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0763062B2 (ja) * 1985-04-12 1995-07-05 日本インタ−株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS59114828A (ja) 1984-07-03

Similar Documents

Publication Publication Date Title
US4771016A (en) Using a rapid thermal process for manufacturing a wafer bonded soi semiconductor
JP3092659B2 (ja) 薄膜キャパシタ及びその製造方法
JP3412470B2 (ja) Ｓｏｉ基板の製造方法
JPH0563205A (ja) 半導体装置
JPS59169121A (ja) 半導体デバイスの製造方法
JP3142457B2 (ja) 強誘電体薄膜キャパシタの製造方法
JP3299909B2 (ja) 酸化物導電体を用いた多層構造電極
JPH0745475A (ja) 薄膜コンデンサ及びその製造方法
JPH0456453B2 (OSRAM)
JPH10200069A (ja) 薄膜キャパシタ
JPS59114829A (ja) 窒化シリコン膜の製造方法
JPH0223030B2 (OSRAM)
JP2000208440A (ja) 半導体素子のキャパシタ―電極用白金膜の形成方法
JPH06107491A (ja) 結晶性薄膜製造方法
JPS59114853A (ja) 積層集積回路素子の製造方法
JPS6367334B2 (OSRAM)
JPH029449B2 (OSRAM)
JPS63273371A (ja) 超電導電気回路の製造方法
JPS6211781B2 (OSRAM)
JPS6185815A (ja) 多結晶シリコン膜の形成方法
JPS59191354A (ja) 半導体装置の製造方法
JPH07166323A (ja) β−ＦｅＳｉ２ 薄膜の製造方法及びβ−ＦｅＳｉ２ 薄膜を有する装置
JPH0528501B2 (OSRAM)
JPS62286282A (ja) 薄膜トランジスタの製造方法
JPH0621064A (ja) 半導体装置の製造方法