JPH029449B2 - - Google Patents

Info

Publication number
JPH029449B2
JPH029449B2 JP57223052A JP22305282A JPH029449B2 JP H029449 B2 JPH029449 B2 JP H029449B2 JP 57223052 A JP57223052 A JP 57223052A JP 22305282 A JP22305282 A JP 22305282A JP H029449 B2 JPH029449 B2 JP H029449B2
Authority
JP
Japan
Prior art keywords
film
substrate
sio
silicon oxide
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57223052A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59114827A (ja
Inventor
Toshiaki Myajima
Masayoshi Koba
Atsushi Kudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP57223052A priority Critical patent/JPS59114827A/ja
Publication of JPS59114827A publication Critical patent/JPS59114827A/ja
Publication of JPH029449B2 publication Critical patent/JPH029449B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/60—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
JP57223052A 1982-12-21 1982-12-21 酸化シリコン膜の製造方法 Granted JPS59114827A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57223052A JPS59114827A (ja) 1982-12-21 1982-12-21 酸化シリコン膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57223052A JPS59114827A (ja) 1982-12-21 1982-12-21 酸化シリコン膜の製造方法

Publications (2)

Publication Number Publication Date
JPS59114827A JPS59114827A (ja) 1984-07-03
JPH029449B2 true JPH029449B2 (OSRAM) 1990-03-02

Family

ID=16792077

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57223052A Granted JPS59114827A (ja) 1982-12-21 1982-12-21 酸化シリコン膜の製造方法

Country Status (1)

Country Link
JP (1) JPS59114827A (OSRAM)

Also Published As

Publication number Publication date
JPS59114827A (ja) 1984-07-03

Similar Documents

Publication Publication Date Title
US4316785A (en) Oxide superconductor Josephson junction and fabrication method therefor
US4596604A (en) Method of manufacturing a multilayer semiconductor device
JPH01315159A (ja) 誘電体分離半導体基板とその製造方法
AU577953B2 (en) Ion beam construction of i/c memory device
JPS59169121A (ja) 半導体デバイスの製造方法
JP3142457B2 (ja) 強誘電体薄膜キャパシタの製造方法
JPH02199860A (ja) 高密度半導体構造体及びその製造方法
JPH03148131A (ja) 半導体素子及びその製造方法
JP3299909B2 (ja) 酸化物導電体を用いた多層構造電極
JPH029450B2 (OSRAM)
JPS6155252B2 (OSRAM)
JPH0456453B2 (OSRAM)
JPH029449B2 (OSRAM)
JPH0223030B2 (OSRAM)
JPS59114853A (ja) 積層集積回路素子の製造方法
JPS6367334B2 (OSRAM)
JP2857456B2 (ja) 半導体膜の製造方法
JPS6211781B2 (OSRAM)
JPH0697520A (ja) 複合型ジョセフソン接合デバイスとその製造方法
JPH01119076A (ja) 酸化物超伝導体膜の製造方法
JPS6185815A (ja) 多結晶シリコン膜の形成方法
JPS5925245A (ja) 半導体装置の製造方法
JPS6037150A (ja) 半導体装置の製造方法
JPH0616537B2 (ja) 半導体基体の製造方法
JPS6252923A (ja) 誘電体による半導体層の絶縁分離方法