JPS59114827A - 酸化シリコン膜の製造方法 - Google Patents

酸化シリコン膜の製造方法

Info

Publication number
JPS59114827A
JPS59114827A JP57223052A JP22305282A JPS59114827A JP S59114827 A JPS59114827 A JP S59114827A JP 57223052 A JP57223052 A JP 57223052A JP 22305282 A JP22305282 A JP 22305282A JP S59114827 A JPS59114827 A JP S59114827A
Authority
JP
Japan
Prior art keywords
film
substrate
spattering
internal stress
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57223052A
Other languages
English (en)
Japanese (ja)
Other versions
JPH029449B2 (OSRAM
Inventor
Toshiaki Miyajima
利明 宮嶋
Masayoshi Koba
木場　正義
Atsushi Kudo
淳 工藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP57223052A priority Critical patent/JPS59114827A/ja
Publication of JPS59114827A publication Critical patent/JPS59114827A/ja
Publication of JPH029449B2 publication Critical patent/JPH029449B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/60—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
JP57223052A 1982-12-21 1982-12-21 酸化シリコン膜の製造方法 Granted JPS59114827A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57223052A JPS59114827A (ja) 1982-12-21 1982-12-21 酸化シリコン膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57223052A JPS59114827A (ja) 1982-12-21 1982-12-21 酸化シリコン膜の製造方法

Publications (2)

Publication Number Publication Date
JPS59114827A true JPS59114827A (ja) 1984-07-03
JPH029449B2 JPH029449B2 (OSRAM) 1990-03-02

Family

ID=16792077

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57223052A Granted JPS59114827A (ja) 1982-12-21 1982-12-21 酸化シリコン膜の製造方法

Country Status (1)

Country Link
JP (1) JPS59114827A (OSRAM)

Also Published As

Publication number Publication date
JPH029449B2 (OSRAM) 1990-03-02

Similar Documents

Publication Publication Date Title
US4316785A (en) Oxide superconductor Josephson junction and fabrication method therefor
US6245645B1 (en) Method of fabricating an SOI wafer
US5407863A (en) Method of manufacturing semiconductor device
AU577953B2 (en) Ion beam construction of i/c memory device
US5089293A (en) Method for forming a platinum resistance thermometer
JP3142457B2 (ja) 強誘電体薄膜キャパシタの製造方法
US4975389A (en) Aluminum metallization for semiconductor devices
JPS59130488A (ja) 導電性金属を使用して平坦化非導電性層を製造する方法
JPS6155252B2 (OSRAM)
JPS59114829A (ja) 窒化シリコン膜の製造方法
KR960000948B1 (ko) 반도체장치의 제조방법
JPS59114827A (ja) 酸化シリコン膜の製造方法
JPH0456453B2 (OSRAM)
JPS59114853A (ja) 積層集積回路素子の製造方法
JPS59114828A (ja) 酸化シリコン膜の製造方法
JPS59114830A (ja) 窒化シリコン膜の製造方法
JPH06350050A (ja) 半導体素子の電荷蓄積部の誘電体絶縁膜の形成方法
JPH0697520A (ja) 複合型ジョセフソン接合デバイスとその製造方法
JPH01119076A (ja) 酸化物超伝導体膜の製造方法
JP2782797B2 (ja) 半導体装置の製造方法
JPS5925245A (ja) 半導体装置の製造方法
JPS6037150A (ja) 半導体装置の製造方法
JPH06132577A (ja) 酸化物超伝導ジョセフソン素子の作製方法
JPS6155251B2 (OSRAM)
JPH029127A (ja) Ｓｏｉ基板の形成方法