JPH0222540B2 - - Google Patents

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Publication number
JPH0222540B2
JPH0222540B2 JP55135869A JP13586980A JPH0222540B2 JP H0222540 B2 JPH0222540 B2 JP H0222540B2 JP 55135869 A JP55135869 A JP 55135869A JP 13586980 A JP13586980 A JP 13586980A JP H0222540 B2 JPH0222540 B2 JP H0222540B2
Authority
JP
Japan
Prior art keywords
melting point
low melting
pellet
point glass
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55135869A
Other languages
English (en)
Other versions
JPS5762539A (en
Inventor
Eiji Yamamoto
Hiroshi Tsuneno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55135869A priority Critical patent/JPS5762539A/ja
Priority to GB8129017A priority patent/GB2084399B/en
Priority to DE3138718A priority patent/DE3138718C2/de
Priority to US06/306,863 priority patent/US4437228A/en
Priority to IT68266/81A priority patent/IT1144882B/it
Priority to FR8118497A priority patent/FR2491259B1/fr
Publication of JPS5762539A publication Critical patent/JPS5762539A/ja
Priority to US06/563,617 priority patent/US4554573A/en
Publication of JPH0222540B2 publication Critical patent/JPH0222540B2/ja
Granted legal-status Critical Current

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    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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  • Engineering & Computer Science (AREA)
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  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Joining Of Glass To Other Materials (AREA)

Description

【発明の詳細な説明】 本発明は低融点ガラスを用いた半導体素子の搭
載方法に関するものである。
低融点ガラスを用いた半導体素子の搭載方法
は、一般にガラス封止型半導体装置に使用されて
いる。前記ガラス封止型半導体装置を始めとし
て、一般に低融点ガラスを用いた半導体素子の搭
載方法では半導体素子を直接低融点ガラスに接続
せしめているが、半導体素子とベースアセンブリ
との熱膨脹係数差が大きい場合、あるいは前記熱
膨脹係数差がかなり小さくても半導体素子が大き
い場合には環境温度から受ける熱応力が極めて大
きくなるためペレツトが破壊されることが知られ
ている。
ところが、従来は、ペレツトがどのようなメカ
ニズムにより破壊に至るかということが判明して
いなかつた。そのため、従来は、低融点ガラスを
用いた半導体素子の搭載技術は製造原価を低減で
きる一大長所が一般に認められながら、半導体素
子の大きさ、あるいはベースアセンブリの材料が
限定された範囲内でしか使用されていなかつた。
そこで、本発明者等が鋭意研究を重ねた結果、
前記した半導体素子すなわちペレツトが破壊する
現象は半導体素子の構成材料であるシリコン
（Si）が低融点ガラスとの濡れ性が悪く、且つ接
合強度が弱いため熱応力が加えられると容易に低
融点ガラスとの間で接合部の剥離が生じ、上記剥
離部の境界部にSi基板を破壊せしめるような応力
集中が生ずるために起きるものであることが判明
した。
本発明はこのような知見に基づいて従来技術の
欠点を解消するためになされたもので、前述の如
く、半導体素子とベースアセンブリとの熱膨脹係
数差が大きい場合あるいは半導体素子が大きい場
合でも半導体素子を破壊せずに接続搭載せしむる
ことを目的とするものである。
本発明の要旨は、半導体ペレツトを低融点ガラ
スを用いてパツケージの半導体ペレツト取付面上
に固着した半導体装置の製造方法において、前記
ペレツトの裏面上に前記低融点ガラスとの接続を
強固とすることの可能な金属膜を形成し、前記金
属膜を前記ペレツト取付面上に前記低融点ガラス
を用いて固着することを特徴とする半導体装置の
製造方法にある。
以下、本発明を図面に示す実施例にしたがつて
さらに説明する。
第１図は本発明により半導体素子をパツケージ
のペレツト取付面に搭載する前の状態を示す概略
断面図、第２図は搭載後の状態を示す概略断面図
である。図示した実施例において、１はセラミツ
クパツケージの一部であるセラミツク基板、２は
セラミツク基板１のキヤビテイ部に形成された半
導体素子接続用の低融点ガラス膜、３は封止用低
融点ガラス膜である。後者の低融点ガラス膜３は
上記キヤビテイ部の半導体素子接続用の低融点ガ
ラス膜２と同一材質でもよく、また異なる材質の
ものを用いてもよい。前記セラミツク基板１、低
融点ガラス２と３は総称的にベースアセンブリと
呼ぶことができる。
また、符号４はキヤビテイ部の低融点ガラス膜
２に接続搭載されるべき半導体素子すなわちペレ
ツト、５は半導体素子４の裏面に設けられたAl
蒸着膜（加工膜）である。なお、このAl蒸着膜
５のAlは蒸着のみによらず、スパツター等他の
方法で形成されてもよい。
次に、本発明の方法により半導体素子をパツケ
ージに搭載する手順について説明する。
まず、セラミツク基板１、低融点ガラス膜２と
３からなるベースアセンブリを低融点ガラスの作
業温度にまで加熱して低融点ガラスを軟化せし
め、裏面にAl蒸着膜５を設けた半導体素子４を
その中央部のペレツト取付面上に位置させ、低融
点ガラス２とAl蒸着膜５とが互いに濡れ合つて
接着され、互いに強固に接合されるように所定の
時間だけ適当な温度で加熱した後、冷却を行うこ
とにより、半導体素子４のペレツト取付面への搭
載接着が完了する。
本実施例においては、Al蒸着膜５がペレツト
取付部の低融点ガラス膜２と強固に接合されるの
で、半導体素子４が破壊されてしまうような熱応
力は半導体装置が使用されるべき如何なる環境条
件下に於ても生ずることはなく良好な半導体素子
４の搭載が完成される。半導体装置の製造におい
て、Alは広く一般的に用いられていることから、
蒸着膜の形成を容易に行うことができる。また低
融点ガラスとの接続を強固にするために半導体素
子裏面に設ける膜の種類としてはAlに限定され
ず、Cr、TiまたはCuからなる金属膜又はCr、Ti
またはCuを主成分とする加工被膜でもよい。
以上説明したように、本発明によれば、半導体
素子を破壊することなく、確実かつ強固に搭載す
ることができ、またペレツト付けのために高価な
金等の貴金属を用いる必要がないので、コストを
著しく低減できる。
【図面の簡単な説明】
第１図は本発明の一実施例を示す半導体素子の
搭載前の半導体装置の一部の略断面図、第２図は
搭載後の状態を示す略断面図である。 １……セラミツク基板、２……低融点ガラス
膜、３……封止用の低融点ガラス膜、４……半導
体素子（ペレツト）、５……Al蒸着膜。

Claims (1)

  1. 【特許請求の範囲】 １ 半導体ペレツトを低融点ガラスを用いてパツ
    ケージの半導体ペレツト取付面上に固着した半導
    体装置の製造方法において、前記ペレツトの裏面
    上に前記低融点ガラスとの接続を強固とすること
    の可能な金属膜を形成し、前記金属膜を前記ペレ
    ツト取付面上に前記低融点ガラスを用いて固着す
    ることを特徴とする半導体装置の製造方法。 ２ 前記金属膜はAl、Cr、TiまたはCuからなる
    金属膜又はCr、TiまたはCuを主成分とする加工
    被膜であることを特徴とする特許請求の範囲第１
    項記載の半導体装置の製造方法。
JP55135869A 1980-10-01 1980-10-01 Mounting method for semiconductor element Granted JPS5762539A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP55135869A JPS5762539A (en) 1980-10-01 1980-10-01 Mounting method for semiconductor element
GB8129017A GB2084399B (en) 1980-10-01 1981-09-25 Mounting a semiconductor device
DE3138718A DE3138718C2 (de) 1980-10-01 1981-09-29 Halbleiterbauelement und Verfahren zu dessen Herstellung
US06/306,863 US4437228A (en) 1980-10-01 1981-09-29 Method of mounting a silicon pellet on a ceramic substrate
IT68266/81A IT1144882B (it) 1980-10-01 1981-09-30 Dispositivo a semiconduttore e procedimento per la sua fabbricazione
FR8118497A FR2491259B1 (fr) 1980-10-01 1981-09-30 Dispositif a semi-conducteurs et son procede de fabrication
US06/563,617 US4554573A (en) 1980-10-01 1983-12-20 Glass-sealed ceramic package type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55135869A JPS5762539A (en) 1980-10-01 1980-10-01 Mounting method for semiconductor element

Publications (2)

Publication Number Publication Date
JPS5762539A JPS5762539A (en) 1982-04-15
JPH0222540B2 true JPH0222540B2 (ja) 1990-05-18

Family

ID=15161666

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55135869A Granted JPS5762539A (en) 1980-10-01 1980-10-01 Mounting method for semiconductor element

Country Status (6)

Country Link
US (2) US4437228A (ja)
JP (1) JPS5762539A (ja)
DE (1) DE3138718C2 (ja)
FR (1) FR2491259B1 (ja)
GB (1) GB2084399B (ja)
IT (1) IT1144882B (ja)

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Also Published As

Publication number Publication date
DE3138718A1 (de) 1982-04-22
US4437228A (en) 1984-03-20
FR2491259B1 (fr) 1986-07-04
DE3138718C2 (de) 1985-06-27
FR2491259A1 (fr) 1982-04-02
GB2084399A (en) 1982-04-07
GB2084399B (en) 1984-09-19
IT1144882B (it) 1986-10-29
JPS5762539A (en) 1982-04-15
US4554573A (en) 1985-11-19
IT8168266A0 (it) 1981-09-30

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