WO1991005368A1 - Die attach structure and method - Google Patents
Die attach structure and method Download PDFInfo
- Publication number
- WO1991005368A1 WO1991005368A1 PCT/US1990/005731 US9005731W WO9105368A1 WO 1991005368 A1 WO1991005368 A1 WO 1991005368A1 US 9005731 W US9005731 W US 9005731W WO 9105368 A1 WO9105368 A1 WO 9105368A1
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- WO
- WIPO (PCT)
- Prior art keywords
- die
- substrate
- die attach
- central portion
- joint
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 239000000463 material Substances 0.000 claims abstract description 39
- 239000004065 semiconductor Substances 0.000 claims description 14
- 238000009826 distribution Methods 0.000 abstract description 6
- 238000012546 transfer Methods 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000012815 thermoplastic material Substances 0.000 description 1
Classifications
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
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- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
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- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
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Definitions
- This invention pertains generally to semiconductor devices and, more particularly to a structure and method for attaching a semiconductor die to a substrate.
- both the transfer of heat between the die and the substrate and the level of stress in the joint are dependent upon the thickness of the joint, with a thinner joint providing better heat transfer but higher stress.
- the thickness of the joint represents a compromise between adequate heat transfer and an acceptable level of stress. This is difficult to realize in practice, particularly with large, high powered chips.
- the invention provides an improved die attach structure and method in which the joint between the die and the substrate is formed in a manner which provides a more uniform temperature distribution in the die and reduces stress in the joint near the edge of the die.
- the substrate is for ed with a non-planar surface in the die attach area, and the joint between the die and the substrate is thicker toward the edge of die than at the center.
- different die attach materials are employed to make the joint stiffer toward the center of the die and more flexible toward the edges.
- both the thickened joint and the different die attach materials are employed.
- Figure 1 is an enlarged fragmentary sectional view of one embodiment of a die attach structure according to the invention.
- Figures 2-4 are views similar to Figure 1 of additional embodiments of a die attach structure according to the invention.
- the invention is illustrated in connection with a generally rectangular semiconductor die 11 and a generally planar substrate 12.
- the die has a planar lower surface 13, and the substrate has a die attach area 14 in which the die is received.
- the die attach area has a raised central portion 16 and a recessed outer portion 17, with the central portion of the die being positioned above the raised central portion of the die attach area and the edges of the die being positioned above the recessed portion of the area.
- the die is bonded to the substrate by a die attach material 19 which fills the region between the lower surface of the die and the surface of the substrate in the die attach area, with a relatively thin joint 21 thus being formed beneath the central portion of the die and a thicker joint 22 being formed beneath the edge portions.
- the raised portion of the die attach area has a planar surface 23, and the recessed portion of the area has a planar surface 24 which is positioned somewhat below the surface of the raised area.
- the lower surface of the die is parallel to these surfaces.
- the thinner joint at the center of the die provides better heat transfer between the die and the substrate in that area and results in a more uniform temperature across the die.
- the thicker joint toward the edges of the die reduces stresses near the edges, although it may make the temperature of the die somewhat higher at the edges than it would be with a thinner joint.
- the higher edge temperature is not a problem, however, and the peak die temperature is actually reduced because of the thinner joint at the center.
- the embodiment of Figure 2 is generally similar to the embodiment of Figure 1, and like reference numerals designate corresponding elements in the two embodiments.
- the edges 26 of the raised central portion of the die attach area are relieved or rounded, and the recessed portion of the area is formed with a concave surface 27. This contouring of the surfaces permits optimization of the temperature and/or stress distribution across the die.
- the upper surface 31 of the central portion of the die attach area has a convex curvature, and the recessed portion has a concave curvature as in the embodiment of Figure 2.
- This contouring of the surfaces permits optimization of the temperature and/or stress distribution over the entire surface of the die.
- the embodiment of Figure 4 is generally similar to the embodiment of Figure 3, and like reference numerals once again designate corresponding elements.
- the edge portions of the die extend beyond the recessed portion of the attach area, and the die is supported by the floor 33 of the attach area. This eliminates the need for a fixture or tooling to hold the die in a level position during assembly, but it does introduce a high stress concentration at the edges of the die.
- the adhesive employed in this embodiment is selected to fail before the edge portions of the die break.
- the thicker and thinner joints can be formed by configuring the lower surface of the die with a non-planar surface rather than forming the contoured mounting surface in the die attach area of the substrate.
- the die and the substrate can both be formed with non-planar or contoured surfaces.
- the die attach material which bonds the die to the substrate can be any suitable material for this purpose.
- Such materials include solder, filled organic adhesives, glass/metal frits, and the like.
- Improved temperature distribution and stress relief can also be provided by using different die attach materials for different portions of the die.
- a relatively strong, stiff material can be employed in the central region where stress is minimal, with a weaker, more flexible material toward the edges where stress is greater.
- the material employed in the center preferably has a high thermal conductivity, and the material employed at the edges can have a lower thermal conductivity.
- Suitable materials include a high strength silver or diamond filled epoxy for the central region, and a modified low-modulus epoxy or a thermoplastic material for the outer region. As will be apparent to those familiar with the art, these are just a few examples of the numerous materials which can be used as the die attach materials.
- the invention has a number of important features and advantages. It improves the joint between a die and a substrate and provides greater tolerance to mechanical stresses in the joint while providing good heat transfer across the joint. Making the joint thicker near the edge of the die than it is near the center reduces stresses near the edge of the die and allows greater heat transfer at the center. The use of a stronger, more thermally conductive die attach material at the center of the joint and a weaker, more flexible material toward the edges can also permit greater heat transfer toward the center and greater tolerance to stresses near the edges. Combining the tapered joint with different attach materials in different regions provides an even greater degree of control over temperature and stress distribution.
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Die Bonding (AREA)
Abstract
Die attach structure and method in which the joint between a die (11) and a substrate (12) is formed in a manner which provides a uniform temperature distribution in the die and reduces stress in the joint near the edge of the die. In some embodiments, the substrate is formed with a non-planar surface in the die attach area (14), and the joint between the die and the substrate is thicker toward the edge of die than at the center. In other embodiments, different die attach materials (19) are employed to make the joint stiffer toward the center of the die and more flexible toward the edges. In some embodiments, both the thickened joint and the different die attach materials are employed.
Description
DIE ATTACH STRUCTURE AND METHOD
This invention pertains generally to semiconductor devices and, more particularly to a structure and method for attaching a semiconductor die to a substrate.
Large, high powered semiconductor chips or dice are commonly mounted on metal or ceramic substrates which serve as heat sinks to carry heat away from the chips or dice. The conventional technique for attaching a die to a substrate involves joining a planar die to a planar substrate with a single material, typically a solder, an adhesive, or a fritted glass. If done properly, this results in a joint of uniform thickness.
One problem with this conventional technique is thermal spreading, or a tendency for the die to be hot near its center and cooler near it edges. This heating can limit the performance of the device and,
in severe cases, result in damage τ_.o txie semiconductor.
Also, because of thermal gradients and a mismatch in coefficients of expansion between the die and the substrate, there is a stress in the joint. This stress is minimal near the center of the die and increases toward near the edges, and it can cause the joint to fail.
Both the transfer of heat between the die and the substrate and the level of stress in the joint are dependent upon the thickness of the joint, with a thinner joint providing better heat transfer but higher stress. In the conventional die attach, the thickness of the joint represents a compromise between adequate heat transfer and an acceptable level of stress. This is difficult to realize in practice, particularly with large, high powered chips.
The invention provides an improved die attach structure and method in which the joint between the die and the substrate is formed in a manner which provides a more uniform temperature distribution in the die and reduces stress in the joint near the edge of the die. In some embodiments, the substrate is
for ed with a non-planar surface in the die attach area, and the joint between the die and the substrate is thicker toward the edge of die than at the center. In other embodiments, different die attach materials are employed to make the joint stiffer toward the center of the die and more flexible toward the edges. In some embodiments, both the thickened joint and the different die attach materials are employed.
Figure 1 is an enlarged fragmentary sectional view of one embodiment of a die attach structure according to the invention.
Figures 2-4 are views similar to Figure 1 of additional embodiments of a die attach structure according to the invention.
In Figure 1, the invention is illustrated in connection with a generally rectangular semiconductor die 11 and a generally planar substrate 12. The die has a planar lower surface 13, and the substrate has a die attach area 14 in which the die is received. The die attach area has a raised central portion 16 and a recessed outer portion 17, with the central portion of the die being positioned above the raised central portion of the die attach area and the edges of the
die being positioned above the recessed portion of the area. The die is bonded to the substrate by a die attach material 19 which fills the region between the lower surface of the die and the surface of the substrate in the die attach area, with a relatively thin joint 21 thus being formed beneath the central portion of the die and a thicker joint 22 being formed beneath the edge portions.
The raised portion of the die attach area has a planar surface 23, and the recessed portion of the area has a planar surface 24 which is positioned somewhat below the surface of the raised area. The lower surface of the die is parallel to these surfaces.
The thinner joint at the center of the die provides better heat transfer between the die and the substrate in that area and results in a more uniform temperature across the die. The thicker joint toward the edges of the die reduces stresses near the edges, although it may make the temperature of the die somewhat higher at the edges than it would be with a thinner joint. The higher edge temperature is not a problem, however, and the peak die temperature is actually reduced because of the thinner joint at the center.
The embodiment of Figure 2 is generally similar to the embodiment of Figure 1, and like reference numerals designate corresponding elements in the two embodiments. In the embodiment of Figure 2, however, the edges 26 of the raised central portion of the die attach area are relieved or rounded, and the recessed portion of the area is formed with a concave surface 27. This contouring of the surfaces permits optimization of the temperature and/or stress distribution across the die.
In the embodiment of Figure 3, the upper surface 31 of the central portion of the die attach area has a convex curvature, and the recessed portion has a concave curvature as in the embodiment of Figure 2. This contouring of the surfaces permits optimization of the temperature and/or stress distribution over the entire surface of the die.
The embodiment of Figure 4 is generally similar to the embodiment of Figure 3, and like reference numerals once again designate corresponding elements. In this embodiment, however, the edge portions of the die extend beyond the recessed portion of the attach area, and the die is supported by the floor 33 of the attach area. This eliminates the need for a fixture or
tooling to hold the die in a level position during assembly, but it does introduce a high stress concentration at the edges of the die. To avoid breakage of the die, the adhesive employed in this embodiment is selected to fail before the edge portions of the die break.
If desired, the thicker and thinner joints can be formed by configuring the lower surface of the die with a non-planar surface rather than forming the contoured mounting surface in the die attach area of the substrate. Likewise, the die and the substrate can both be formed with non-planar or contoured surfaces.
The die attach material which bonds the die to the substrate can be any suitable material for this purpose. Such materials include solder, filled organic adhesives, glass/metal frits, and the like.
Improved temperature distribution and stress relief can also be provided by using different die attach materials for different portions of the die. Thus, for example, a relatively strong, stiff material can be employed in the central region where stress is minimal, with a weaker, more flexible material toward
the edges where stress is greater. The material employed in the center preferably has a high thermal conductivity, and the material employed at the edges can have a lower thermal conductivity. Suitable materials include a high strength silver or diamond filled epoxy for the central region, and a modified low-modulus epoxy or a thermoplastic material for the outer region. As will be apparent to those familiar with the art, these are just a few examples of the numerous materials which can be used as the die attach materials.
When different materials are used for the central region and the outer region, it is not necessary to employ different joint thicknesses in the two regions, and the surfaces of both the die and the substrate can be planar. However, it is also possible to combine the two approaches and use a relatively strong, stiff material in for the thinner joint in the central region and a weaker, more flexible material for the thicker joint in the outer region.
The invention has a number of important features and advantages. It improves the joint between a die and a substrate and provides greater tolerance to mechanical stresses in the joint while providing good
heat transfer across the joint. Making the joint thicker near the edge of the die than it is near the center reduces stresses near the edge of the die and allows greater heat transfer at the center. The use of a stronger, more thermally conductive die attach material at the center of the joint and a weaker, more flexible material toward the edges can also permit greater heat transfer toward the center and greater tolerance to stresses near the edges. Combining the tapered joint with different attach materials in different regions provides an even greater degree of control over temperature and stress distribution.
It is apparent from the foregoing that a new and improved die attach structure and method have been provided. While only certain presently preferred embodiments have been described in detail, as will be apparent to those familiar with the art, certain changes and modifications can be made without departing from the scope of the invention as defined by the following claims.
Claims
1. In a semiconductor device: a substrate having a die attach area with a mounting surface, a semiconductor die having a surface facing the mounting surface, one of said surfaces being contoured in such manner that a central portion of the die is closer to the substrate than an edge portion, a first die attach material filling the region between the central portion of the die and the substrate and bonding the central portion to the substrate, and a second die attach material filling the region between the edge portion of the die and the substrate and bonding the edge portion to the substrate.
2. The device of Claim 1 wherein the die attach area has a raised central portion and a recessed outer portion with surfaces which form the mounting surface.
3. The device of Claim 1 wherein the first die attach material is stiffer than the second die attach material.
4. The device of Claim 1 wherein the first die attach material has a higher thermal conductivity than the second die attach material.
5. In a semiconductor device: a substrate having a die attach area with a mounting surface, a semiconductor die having a surface facing the mounting surface, one of said surfaces being contoured in such manner that a central portion of the die is closer to the substrate than an edge portion, a die attach material filling the region between the die and the substrate and bonding the die to the substrate with a joint which is relatively thin toward the central portion of the die and thicker toward the edge portion.
6. The device of Claim 5 wherein the die attach area has a raised central portion and a recessed outer . portion with surfaces which form the mounting surface.
7. The device of Claim 6 wherein the surfaces of the central and outer portions of the die attach area are both generally planar.
8. The device of Claim 6 wherein the surface of the outer portion of the die attach area is concave.
9. The device of Claim 6 wherein the surface of the central portion of the die attach area is planar toward its middle and rounded toward its periphery.
10. The device of Claim 6 wherein the surface of the central portion of the die attach area is convex.
11. In a semiconductor device: a substrate having a die attach area, a semiconductor die in the die attach area, a relatively stiff die attach material bonding a central portion of the die to the substrate, and a more flexible die attach material bonding an edge portion of the die to the substrate.
12. The device of Claim 11 wherein the relatively stiff die attach material has a higher thermal conductivity than the more flexible material.
13. In a method of attaching a semiconductor die to a substrate, the steps of: forming a non-planar surface on one of said die and said substrate such that when the die and the substrate are positioned in facing relationship a central portion of the die is closer to the substrate than an edge portion, bonding the die to the substrate in the facing relationship
with a first die attach material between the central portion of the die and the substrate and a second die attach material between the edge portion of the die and the substrate.
1 . The method of Claim 13 wherein the substrate is formed with a non-planar surface on which the die is mounted.
15. In a method of attaching a semiconductor die to a substrate, the steps of: forming a non-planar surface on one of said die and said substrate such that when the die and the substrate are positioned in facing relationship a central portion of the die is closer to the substrate than an edge portion, bonding the die to the substrate in the facing relationship with a die attach material which fills the region between the die and the substrate and forms a joint which is relatively thin toward the central portion of the die and thicker toward the edge portion.
16. The method of Claim 15 wherein the non-planar surface is formed on the substrate by forming a die attach area having a raised central portion and a recessed outer portion.
17. The method of Claim 16 wherein the central and outer portions of the die attach area are both formed with generally planar surfaces.
18. The method of Claim 16 wherein the outer portion of the die attach area is formed with a concave surface.
19. The method of Claim 16 wherein the central portion of the die attach area is formed with a surface which is planar toward its middle and rounded toward its periphery.
20. The method of Claim 16 wherein the central portion of the die attach area is formed with a convex surface.
21. In a method of attaching a semiconductor die to a substrate: bonding the die to the substrate with a first die attach material between a central portion of the die and the substrate and a second die attach material between an edge portion of the die and the substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2515543A JPH06502962A (en) | 1989-10-05 | 1990-10-05 | Die fixing structure |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US41773089A | 1989-10-05 | 1989-10-05 | |
US417,730 | 1989-10-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1991005368A1 true WO1991005368A1 (en) | 1991-04-18 |
Family
ID=23655191
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1990/005731 WO1991005368A1 (en) | 1989-10-05 | 1990-10-05 | Die attach structure and method |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0495005A1 (en) |
JP (1) | JPH06502962A (en) |
WO (1) | WO1991005368A1 (en) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0650658A1 (en) * | 1992-07-13 | 1995-05-03 | Olin Corporation | Electronic package having controlled epoxy flow |
WO2004074168A2 (en) * | 2003-02-20 | 2004-09-02 | Analog Devices, Inc. | Packaged microchip with thermal stress relief |
US6946742B2 (en) | 2002-12-19 | 2005-09-20 | Analog Devices, Inc. | Packaged microchip with isolator having selected modulus of elasticity |
DE102004055817B3 (en) * | 2004-11-18 | 2006-01-12 | Danfoss Silicon Power Gmbh | Manufacture procedure for heavy-duty semiconductor modules involves mass of solder to produce solder connection and particles of copper are sprayed into place on solder |
WO2006036250A1 (en) * | 2004-09-28 | 2006-04-06 | Analog Devices, Inc. | Packaged microchip with premolded-type package |
EP1675173A2 (en) * | 2004-12-06 | 2006-06-28 | Delphi Technologies, Inc. | Epoxy-solder thermally conductive structure for an integrated circuit |
DE102015200980A1 (en) * | 2015-01-22 | 2016-07-28 | Robert Bosch Gmbh | Connecting arrangement between a support element and an electronic circuit component and electronic assembly |
US9676614B2 (en) | 2013-02-01 | 2017-06-13 | Analog Devices, Inc. | MEMS device with stress relief structures |
US10131538B2 (en) | 2015-09-14 | 2018-11-20 | Analog Devices, Inc. | Mechanically isolated MEMS device |
US10167189B2 (en) | 2014-09-30 | 2019-01-01 | Analog Devices, Inc. | Stress isolation platform for MEMS devices |
US11417611B2 (en) | 2020-02-25 | 2022-08-16 | Analog Devices International Unlimited Company | Devices and methods for reducing stress on circuit components |
US11981560B2 (en) | 2020-06-09 | 2024-05-14 | Analog Devices, Inc. | Stress-isolated MEMS device comprising substrate having cavity and method of manufacture |
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JP5252024B2 (en) * | 2011-04-12 | 2013-07-31 | 富士電機株式会社 | Semiconductor device |
JP2014060211A (en) * | 2012-09-14 | 2014-04-03 | Omron Corp | Substrate structure, semiconductor chip mounting method and solid state relay |
JP2014093356A (en) * | 2012-11-01 | 2014-05-19 | Toyota Motor Corp | Semiconductor device |
JP6163246B1 (en) * | 2016-12-06 | 2017-07-12 | 西村陶業株式会社 | Manufacturing method of ceramic substrate |
JP2021145081A (en) * | 2020-03-13 | 2021-09-24 | 日立Astemo株式会社 | Manufacturing method of semiconductor device and semiconductor device |
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US4903118A (en) * | 1988-03-30 | 1990-02-20 | Director General, Agency Of Industrial Science And Technology | Semiconductor device including a resilient bonding resin |
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JPS59208735A (en) * | 1983-05-13 | 1984-11-27 | Hitachi Ltd | Semiconductor device |
JPS63237534A (en) * | 1987-03-26 | 1988-10-04 | Nec Corp | Die pad structure of lsi chip |
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- 1990-10-05 EP EP19900916935 patent/EP0495005A1/en not_active Withdrawn
- 1990-10-05 WO PCT/US1990/005731 patent/WO1991005368A1/en not_active Application Discontinuation
- 1990-10-05 JP JP2515543A patent/JPH06502962A/en active Pending
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US4903118A (en) * | 1988-03-30 | 1990-02-20 | Director General, Agency Of Industrial Science And Technology | Semiconductor device including a resilient bonding resin |
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Patent Abstracts of Japan, vol. 006, no. 111 (E-114)(989), 22 June 1982; & JP-A-57 040 965 (NIPPON DENKI K.K.) 6 March 1982 * |
Patent Abstracts of Japan, vol. 007, no. 076 (E-167)(1221), 30 March 1983; & JP-A-58 006 152 (MITSUBISHI DENKI K.K.) 13 January 1983 * |
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Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
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EP0650658A4 (en) * | 1992-07-13 | 1996-03-13 | Olin Corp | Electronic package having controlled epoxy flow. |
EP0650658A1 (en) * | 1992-07-13 | 1995-05-03 | Olin Corporation | Electronic package having controlled epoxy flow |
US7166911B2 (en) | 2002-09-04 | 2007-01-23 | Analog Devices, Inc. | Packaged microchip with premolded-type package |
US6946742B2 (en) | 2002-12-19 | 2005-09-20 | Analog Devices, Inc. | Packaged microchip with isolator having selected modulus of elasticity |
WO2004074168A2 (en) * | 2003-02-20 | 2004-09-02 | Analog Devices, Inc. | Packaged microchip with thermal stress relief |
WO2004074168A3 (en) * | 2003-02-20 | 2005-04-14 | Analog Devices Inc | Packaged microchip with thermal stress relief |
JP2008516196A (en) * | 2004-09-28 | 2008-05-15 | アナログ デバイシス, インコーポレイテッド | Packaged microchip with pre-mold type package |
WO2006036250A1 (en) * | 2004-09-28 | 2006-04-06 | Analog Devices, Inc. | Packaged microchip with premolded-type package |
JP4695652B2 (en) * | 2004-09-28 | 2011-06-08 | アナログ デバイシス, インコーポレイテッド | Packaged microchip with pre-mold type package |
DE102004055817B3 (en) * | 2004-11-18 | 2006-01-12 | Danfoss Silicon Power Gmbh | Manufacture procedure for heavy-duty semiconductor modules involves mass of solder to produce solder connection and particles of copper are sprayed into place on solder |
EP1675173A3 (en) * | 2004-12-06 | 2006-07-05 | Delphi Technologies, Inc. | Epoxy-solder thermally conductive structure for an integrated circuit |
EP1675173A2 (en) * | 2004-12-06 | 2006-06-28 | Delphi Technologies, Inc. | Epoxy-solder thermally conductive structure for an integrated circuit |
US9676614B2 (en) | 2013-02-01 | 2017-06-13 | Analog Devices, Inc. | MEMS device with stress relief structures |
US10167189B2 (en) | 2014-09-30 | 2019-01-01 | Analog Devices, Inc. | Stress isolation platform for MEMS devices |
US10759659B2 (en) | 2014-09-30 | 2020-09-01 | Analog Devices, Inc. | Stress isolation platform for MEMS devices |
DE102015200980A1 (en) * | 2015-01-22 | 2016-07-28 | Robert Bosch Gmbh | Connecting arrangement between a support element and an electronic circuit component and electronic assembly |
US10131538B2 (en) | 2015-09-14 | 2018-11-20 | Analog Devices, Inc. | Mechanically isolated MEMS device |
US11417611B2 (en) | 2020-02-25 | 2022-08-16 | Analog Devices International Unlimited Company | Devices and methods for reducing stress on circuit components |
US11981560B2 (en) | 2020-06-09 | 2024-05-14 | Analog Devices, Inc. | Stress-isolated MEMS device comprising substrate having cavity and method of manufacture |
Also Published As
Publication number | Publication date |
---|---|
JPH06502962A (en) | 1994-03-31 |
EP0495005A1 (en) | 1992-07-22 |
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