DE102004055817B3 - Manufacture procedure for heavy-duty semiconductor modules involves mass of solder to produce solder connection and particles of copper are sprayed into place on solder - Google Patents

Manufacture procedure for heavy-duty semiconductor modules involves mass of solder to produce solder connection and particles of copper are sprayed into place on solder Download PDF

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DE102004055817B3
DE102004055817B3 DE102004055817A DE102004055817A DE102004055817B3 DE 102004055817 B3 DE102004055817 B3 DE 102004055817B3 DE 102004055817 A DE102004055817 A DE 102004055817A DE 102004055817 A DE102004055817 A DE 102004055817A DE 102004055817 B3 DE102004055817 B3 DE 102004055817B3
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solder
copper
sprayed
solder joint
semiconductor module
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Mathias Kock
Ronald Eisele
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Danfoss Silicon Power GmbH
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341—Surface mounted components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
    • H01L2224/26152—Auxiliary members for layer connectors, e.g. spacers being formed on an item to be connected not being a semiconductor or solid-state body
    • H01L2224/26175—Flow barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09209—Shape and layout details of conductors
    • H05K2201/09654—Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
    • H05K2201/09745—Recess in conductor, e.g. in pad or in metallic substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10742—Details of leads
    • H05K2201/10886—Other details
    • H05K2201/10909—Materials of terminal, e.g. of leads or electrodes of components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10954—Other details of electrical connections
    • H05K2201/10969—Metallic case or integral heatsink of component electrically connected to a pad on PCB
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/20—Details of printed circuits not provided for in H05K2201/01 - H05K2201/10
    • H05K2201/2081—Compound repelling a metal, e.g. solder
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/13—Moulding and encapsulation; Deposition techniques; Protective layers
    • H05K2203/1333—Deposition techniques, e.g. coating
    • H05K2203/1344—Spraying small metal particles or droplets of molten metal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

A rectangular baseplate (Al - Bodenplatte) for a semiconductor circuit is made of aluminum. A thick layer of solder may fasten a flat rectangular copper plate (Cu - Flache) to the top surface of the baseplate. The copper may be applied by a hot gas spraying process. An alternative version may use a copper baseplate, and the copper covering plate may have a 100 mu deep groove near its edge.

Description

Die Erfindung betrifft ein Verfahren zum Herstellen eines Leistungshalbleitermoduls und ein solches Halbleitermodul. Bei der Herstellung von Leistungshalbleitermodulen ergibt sich das Problem, dass durch Temperaturwechsel Lötstellen verspröden und reißen.The The invention relates to a method for producing a power semiconductor module and such a semiconductor module. In the manufacture of power semiconductor modules The problem arises that due to temperature changes solder joints go brittle and tear.

Bisher wird dem Problem durch eine Erhöhung der Lötschichtdicke versucht entgegenzuwirken, je höher Lötschichtdicke ist, um so größer ist der Bereich, in dem das im wesentlichen elastische Lot Ausdehnungsunterschiede, die durch unterschiedliche Temperaturausdehnungskoeffizienten begründet sind, ausgleichen kann.So far The problem is caused by an increase the solder layer thickness tries to counteract, the higher Solder layer thickness is, the bigger it is the area in which the substantially elastic solder has expansion differences, which are due to different coefficients of thermal expansion, can compensate.

Die US 2003/0175559 A1 baut eine laminierte Wärmesenke unter Verwendung von kaltgasgespritzten Schichten auf, wozu Metalle und Keramiken in Partikelform aufgespritzt werden.The US 2003/0175559 A1 builds a laminated heat sink using on cold-gas sprayed layers, including metals and ceramics in Particle mold are sprayed.

Die nachveröffentlichte DE 103 20 740 A1 bringt auf einen Kühlkörper aus Aluminium eine lötbare Schicht aus Kupfer auf, um ein elektrisches Bauteil mittels Lot zu verlöten. Dabei wird das Kupfer der Schicht und das Lot mittels Kaltgasspritzen hergestellt.The post-published DE 103 20 740 A1 brings on a heat sink made of aluminum, a solderable layer of copper, to solder an electrical component by means of solder. The copper of the layer and the solder is produced by means of cold gas spraying.

Die DE 100 45 783 A1 verwendet ebenfalls Kaltgasspritzen, um Leiterrahmen mit Hartloten und Beimischungen zu beschichten.The DE 100 45 783 A1 also uses cold gas spraying to coat lead frames with brazing alloys and admixtures.

Die DE 203 11 131 U1 lehrt, einen Kühlkörper aus Aluminium mittels Kaltspritzen mit einer Kupferschicht und einer Lötzinnschicht an der Grundplatte aus Kupfer zu verbinden.The DE 203 11 131 U1 teaches to connect an aluminum heat sink by means of cold spraying with a copper layer and a solder layer on the copper base plate.

Die EP 13 87 609 A2 montiert einen Leistungstransistor mittels Lot aus eine kaltgasgespritze Kupferschicht, die auf einem Kühlkörper aus Aluminium erzeugt wurde, um durch die stoffschlüssige Verbindung eine vorteilhafte Wärmeableitung zu erreichen.The EP 13 87 609 A2 mounted a power transistor by means of solder from a cold gas-sprayed copper layer, which was produced on a heat sink made of aluminum in order to achieve an advantageous heat dissipation by the cohesive connection.

Auch die WO 2004/091809 A2 verwendet Kaltgasaufspritzen um Metalle wie Lote abzuscheiden, um einen lötfähigen elektrischen Anschluss oder ein „solderable pad" zu einer mit Plastik beschichteten elektrischen Schaltung herzustellen, ohne das Plastik vorher abisolieren zu müssen, in dem durch das Plastik „durch geschossen wird" bzw. dies „weggespritzt" wird.Also WO 2004/091809 A2 uses Kaltgasaufspritzen to metals such as Deposit solder to a solderable electrical Connection or a "solderable pad "to one with To produce plastic coated electrical circuit without Before having to strip the plastic in advance through the plastic " is shot "or this is" splashed away "is.

Die DE 101 22 221 A1 sieht in einer Bodenplatte aus Kupfer Vertiefungen vor, welche dann das Lot füllt, und dabei an den Ecken eine dickere Lotschicht bildet als in der Mitte. Inhaltsgleich lehrt die WO 91/05368 A1 anstatt Lot auch Kleber oder Glas zu verwenden. Anspruch 1 und 5 gehen von diesen Druckschriften aus.The DE 101 22 221 A1 provides depressions in a copper base plate, which then fills the solder, forming a thicker layer of solder at the corners than in the middle. At the same time, WO 91/05368 A1 teaches to use glue or glass instead of solder. Claim 1 and 5 are based on these documents.

Die JP 2002-158238 A lehrt das Aufbringen einer konvexen Schicht, um den nachfolgend aufgebrachten Leitkleber an den Rändern dicker als in der Mitte des Chips herzustellen.The JP 2002-158238 A teaches the application of a convex layer to the subsequently applied conductive adhesive at the edges thicker than to produce in the middle of the chip.

Der Erfindung liegt daher die Aufgabe zugrunde, die hochbelasteten Stellen eines Lötschichtverbindungsaufbaus, die Ecken und Kanten einer Lötverbindung sicherer zu gestalten, ohne dass es zu einem „Verschwimmen" oder gar zu einem „Verkippen" kommt.Of the Invention is therefore the object of the highly loaded bodies a solder layer connection structure, the corners and edges of a solder joint to make it safer without "blurring" or even "tilting".

Erfindungsgemäß wird dies durch die Merkmale des Hauptanspruches und des neben geordneten Anspruchs 5 gelöst. Insbesondere ein Aufspritzen von Partikeln wenigstens eines elektrisch und thermisch leitendem Materials in einem Strom heißen Gases auf die Teilbereich eines Trägers, der den belasteten Stellen der Lötverbindung benachbart ist, führt zu einer erhöhten Lötschichtdicke in diesem Bereich. According to the invention this is by the features of the main claim and the next parent Claim 5 solved. In particular, an injection of particles of at least one electrically and thermally conductive material in a stream of hot gas on the subsection of a carrier, the loaded areas of the solder joint adjacent leads to an increased Solder layer thickness in this area.

Durch die Verringerung der Lötschichtdicke in anderen Bereichen wird es möglich, den ansonsten verschwimmenden Verbindungspartner in seiner Position zu halten. Dabei können mehrere Schichten verschiedener Materialien mit unterschiedlichen Wärmeausdehnungskoeffizienten aufeinandergeschichtet werden, um so bereits in diesem Schichtstapel wesentliche Temperaturausdehnungskoeffizientenunterschiede auszugleichen.By the reduction of the solder layer thickness in other areas will make it possible the otherwise blurred connection partner in his position to keep. It can several layers of different materials with different thermal expansion coefficients be stacked so as to already be in this layer stack compensate for significant differences in temperature coefficient of expansion.

Insbesondere in der Mitte des Lötpartners macht es Sinn, derartige, große Flächenanteile des Verbindungspartners abdeckende Strukturen zur Verringerung der Lötschichtdicke aufzubringen. An den Ecken und Kanten ist ein derartiger Aufbau dann wesentlich flacher zu wählen oder ganz fortzulassen, so dass dort erhöhte Lötschichtdicken die geometrisch bei der Ausdehnung am stärksten belasteten Stellen am besten halten können.Especially in the middle of the soldering partner it makes sense, such, great area shares structures covering the liaison partner to reduce Solder layer thickness applied. At the corners and edges is such a structure then much flatter to choose or omit altogether, so that there increased solder layer thicknesses the geometrically strongest in expansion best able to withstand stressed areas.

Es ist auch denkbar, am Rande zur Vermeidung des Verfließens des Lotes Kanten aufzubauen, die das Lot an diesen Stellen, an denen es höhere Dicke hat, halten sollen. Statt eines mittleren Plateaus, das als zentraler Abstandhalter dient, können auch mehrere kleinere Plateaus, beispielsweise in den Ecken der Lötverbindung, vorgesehen werden, die es erlauben – bei aufgrund der geometrisch kleinen Abmessungen geringen thermischen Ausdehnungen – diese Plateaus mit minimaler oder gar keiner Lötung zu versehen.It is also conceivable, on the edge to avoid the flow of the Lots of edges to build up the solder in those places where it higher Thickness has to hold. Instead of a middle plateau, the as central spacer serves, can also several smaller plateaus, for example in the corners of the soldered connection, be provided, which allow it - due to the geometric small dimensions of low thermal expansion - this Plateaus with minimal or no soldering to provide.

Schon drei dieser Plateaus können als „Tragsäulen" den Verbindungspartner bei einer Lötung tragen und so die Dicke der Lötschicht einstellen. Falls die Fixierung noch fester sein soll, z.B. ein Aufschwimmen vermieden werden soll, können – vom Gros der Lötmassenaufbringung separiert kleine Bereiche hochschmelzenden Lots aufgebracht werden, die zunächst separat aufgeschmolzen werden ohne das Gros der Lötmasse zu verflüssigen, und die nach einem Erstarren den zweiten Verbindungspartner fest in einer vordefinerten Position halten, da sie nicht mit der restlichen Lötmasse aufschmelzen, wenn die großflächige Lötung vorgenommen wird.Nice three of these plateaus can as "support columns" the connection partner at a soldering wear and so the thickness of the solder layer to adjust. If the fixation is to be even stronger, e.g. one Floating should be avoided - from the bulk of the soldering application separated small areas of refractory solder can be applied, the first be melted separately without the bulk of the solder liquefy, and after a solidify the second connection partner firmly hold in a predefined position, as they do not match the rest solder melt when the large area soldering done becomes.

Weiter können Verformungen, beispielsweise der Bodenplatte antizipiert werden und entsprechend durch höhere Lötschichtdicken und entsprechend vor Auftrag weiterer abstand haltender Schichten ausgeglichen werden. Auf diese Weise lassen sich neben zukünftigen Substratverformungen auch bereits bestehende Substratverformungen, beispielsweise durch gebogene Substrate oder nicht glatte Strukturen an der Oberseite ausgleichen.Further can Deformations, such as the bottom plate are anticipated and accordingly higher Solder layer thicknesses and accordingly before the order of further spacing layers be compensated. In this way can be next to future Substrate deformations also existing substrate deformations, for example, by curved substrates or non-smooth structures balance at the top.

Weitere Merkmale und Vorteile der Erfindung ergeben sich aus nachfolgender Beschreibung eines bevorzugten Ausführungsbeispiels. Dabei zeigt:Further Features and advantages of the invention will become apparent from the following Description of a preferred embodiment. Showing:

1 eine Bodenplatte als Beispiel einer lötfähigen Oberfläche auf der eine erste Schicht kaltgasgespritztes Kupfer aufgebracht ist, und 1 a bottom plate as an example of a solderable surface on which a first layer cold gas-sprayed copper is applied, and

2 eine Darstellung wie 1 bei der eine Kupferschicht in einem umlaufenden „Graben" benachbart des Randes der Geometrie der aufgebrachten ersten Schicht dünner aufgebracht ist. 2 a representation like 1 wherein a copper layer is deposited thinner in a circumferential "trench" adjacent to the edge of the geometry of the deposited first layer.

Durch den Aufbau eines Plateaus (siehe 1) unterhalb des Halbleitersubstrats (z.B. DCB), das nicht notwendigerweise die gleichen Dimensionen, also etwa rechteckig haben muss, sondern auch wie eine runde „Beule" unterhalb des Halbleitersubstrats angeordnet sein kann, ergibt sich die Möglichkeit, an den hochbelasteten Stellen, eine höhere Schichtdicke des Lotes vorzusehen, die aufgrund der höheren Schichtdicke besser die thermischen Ausdehnungsunterschiede aufnehmen kann.By building a plateau (see 1 ) below the semiconductor substrate (eg DCB), which does not necessarily have to have the same dimensions, that is approximately rectangular, but can also be arranged like a round "bump" below the semiconductor substrate, the possibility arises, at the heavily loaded points, of a higher layer thickness to provide the solder, which can better absorb the thermal expansion differences due to the higher layer thickness.

Durch Aufspritzen einer wandartigen Struktur außerhalb des vorgesehenen Lötgebietes, lässt sich ein Verfließen des Lotes vermeiden. Diese wandartigen Strukturen sollten einen höheren Schmelzpunkt als das Gros der Lötmasse haben. Sie können aus Metallen wie Kupfer oder sogar aus keramischen Werkstoffen gebildet sein.By Spraying a wall-like structure outside the intended soldering area, let yourself a flow avoid the solder. These wall-like structures should have one higher melting point as the bulk of the solder to have. You can made of metals such as copper or even ceramic materials be.

Bisher wurden zu diesem Zweck Lötstoplacke aufgebracht, die jedoch bei den hohen Lötschichtdicken, die nun vorgesehen werden, nicht ausreichen. Durch Kaltgasaufspritzen zum Auftrag von Material, lassen sich jedoch Wände oder „Deiche" aufbauen, die aufgrund der beeinflußbaren Oberflächenspannung geschmolzenen Lotes wesentlich besser auch dickere Schichten Lots am Ort halten können, sogar wenn das Lot in einer Dicke vorgesehen wird, die die Höhe der wandartigen Struktur überschreitet.So far were soldered for this purpose applied, however, at the high solder layer thicknesses that are now provided will not be enough. By Kaltgasaufspritzen to the order of Material, however, can be walls or build "dikes" due to the influenceable surface tension molten solder much better even thicker layers of solder can hold in place, even if the solder is provided in a thickness exceeding the height of the wall-like structure.

Die Erfindung ist zwar für den Bau von Leistungshalbleitern besonderes interessant, aber auch andere Halbleitermodule, bei denen besondere thermische Wechsel zu befürchten sind, oder die für lange Standzeiten auszulegen sind (Satelliten) können den erfindungsgemäßen Aufbau nutzen, d.h. eine variierende Schichtdicke der Lötung, die an belasteten Orten durch einen verdickten Auftrag von aufgespritzter Partikeln wenigstens eines elektrisch und thermisch leitenden Materials gebildet ist, das die Lötverbindung bei einem Aufschmelzen und anschließendem Erstarren ausbildet, aufweisen.The Although the invention is for the construction of power semiconductors particularly interesting, but also others Semiconductor modules in which special thermal changes are to be feared, or the for long periods are to be interpreted (satellites), the structure of the invention use, i. a varying layer thickness of the soldering, in loaded places by a thickened application of sprayed particles at least an electrically and thermally conductive material is formed, that the solder joint during a melting and subsequent solidification, exhibit.

An definierten Ecken und Kantenbereichen kann zum Beispiels eine dünnere Schicht eines ersten, leitenden Materials unter der Lötung aufgebracht sein als an den Stellen geringer Lötungsdicke. Dies kann sogar soweit gehen, daß Grabenstrukturen in Randbereichen der Lötverbindungsgeometrie vorgesehen werden (2). Zusätzlich oder alternativ kann in Randbereichen der Lötung eine Lötmasse anderer Zusammensetzung (beispielsweise besonders hochwertige Legierungszusätze) deponiert werden.At defined corners and edge regions, for example, a thinner layer of a first conductive material may be applied under the solder than at the locations of low solder thickness. This may even go so far that trench structures are provided in edge regions of the solder joint geometry ( 2 ). Additionally or alternatively, a soldering compound of a different composition (for example, particularly high-quality alloying additives) can be deposited in edge regions of the soldering.

Claims (8)

Verfahren zum Herstellen eines Leistungshalbleitermoduls mit einer aus Lötmasse erstellten Lötverbindung unter Ausbildung einer erhöhten Lötschichtdicke der Lötverbindung an belasteten Stellen nach einem Aufschmelzen und Erstarren der Lötmasse, gekennzeichnet durch ein Aufspritzen von Partikeln wenigstens eines ersten elektrisch und thermisch leitenden Materials in einem Strom heißen Gases, auf wenigstens Teilbereiche eines Trägers unter der späteren Lötverbindung, nachfolgendes Aufbringen von Lötmasse und Aufschmelzen dieser.Method for producing a power semiconductor module with a solder paste created solder joint under training an elevated Solder layer thickness the solder joint at loaded points after melting and solidification of solder, characterized by spraying particles of at least one first electrically and thermally conductive material in a stream hot gases, on at least portions of a carrier under the later solder joint, subsequent application of solder and melting this. Verfahren nach Anspruch 1, dadurch gekennzeichnet, dass an definierten Ecken und Kantenbereichen eine dünnere Schicht des ersten leitenden Materials aufgespritzt wird.Method according to claim 1, characterized in that that at defined corners and edge areas a thinner layer of the first conductive material is sprayed on. Verfahren nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass Grabenstrukturen in Randbereichen der Lötverbindungsgeometrie vorgesehen werden.Method according to one of the preceding claims, characterized characterized in that trench structures in edge regions of the solder joint geometry be provided. Verfahren nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass in Randbereichen eine Lötmasse anderer Zusammensetzung im Aufspritzverfahren deponiert wird.Method according to one of the preceding An Proverbs, characterized in that a soldering compound of other composition is deposited by injection molding in peripheral areas. Halbleitermodul mit einer aus Lötmasse erstellten Lötverbindung mit einer erhöhten Lötschichtdicke an belasteten Stellen der Lötmasse, gekennzeichnet durch einen verdickten Auftrag von aufgespritzten Partikeln wenigstens eines ersten elektrisch und thermisch leitenden Materials, das die Lötverbindung bei einem Aufschmelzen und anschließendem Erstarren ausbildet.Semiconductor module with a solder joint made of solder with an elevated Solder layer thickness at loaded points of the solder, characterized by a thickened order of sprayed on Particles of at least one first electrically and thermally conductive Materials that the solder joint formed at a melting and then solidifying. Halbleitermodul nach Anspruch 5, dadurch gekennzeichnet, dass an definierten Ecken und Kantenbereichen eine dünnere Schicht des ersten leitenden Materials unter der Lötung aufgebracht ist, als an den Stellen geringer Lötungsdicke. Semiconductor module according to Claim 5, characterized that at defined corners and edge areas a thinner layer is applied to the first conductive material under the soldering, than to the Make small solder thickness. Halbleitermodul nach einem der vorangehenden Ansprüche 5–6, dadurch gekennzeichnet, dass Grabenstrukturen in Randbereichen der Lötverbindungsgeometrie vorgesehen werden.Semiconductor module according to one of the preceding claims 5-6, characterized characterized in that trench structures in edge regions of the solder joint geometry be provided. Halbleitermodul nach einem der vorangehenden Ansprüche 5–7, dadurch gekennzeichnet, dass in Randbereichen der Lötung eine Lötmasse anderer Zusammensetzung deponiert ist.Semiconductor module according to one of the preceding claims 5-7, characterized characterized in that in peripheral areas of the soldering a solder of different composition is deposited.
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